公开(公告)号：US20250038126A1

公开(公告)日：2025-01-30

申请号：US18784941

申请日：2024-07-26

Applicant: MEDIATEK INC.

Inventor： De-Wei Liu ,  Pu-Shan Huang ,  Sang-Mao Chiu ,  Shih-Yi Syu

IPC: H01L23/552 ,  H01L23/00 ,  H01L23/055 ,  H01L23/31 ,  H01L23/36 ,  H01L23/498 ,  H01L23/58

Abstract: A semiconductor package includes a substrate having a top surface and a bottom surface, and a vertical sidewall extending between the top surface and the bottom surface; an integrated circuit die mounted within a device region on the top surface of the substrate; a metal interconnect structure embedded within the device region of the substrate, wherein the integrated circuit die is electrically connected to the metal interconnect structure; and a peripheral shielding ring embedded within a peripheral region of the substrate. The peripheral region surrounds the device region. A lid is mounted on the top surface of the substrate. The lid is electrically connected with the peripheral shielding ring.

公开(公告)号：US10515887B2

公开(公告)日：2019-12-24

申请号：US15700220

申请日：2017-09-11

Applicant: MEDIATEK INC.

Inventor： Shih-Yi Syu ,  Chia-Yu Jin ,  Che-Ya Chou ,  Wen-Sung Hsu ,  Nan-Cheng Chen

IPC: H01L23/498 ,  H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/42 ,  H01L23/64 ,  H01L23/367 ,  H01L23/433 ,  H01L21/48 ,  H01L23/00

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a first carrier substrate having a first surface and an opposing second surface. A second carrier substrate is stacked on the first carrier substrate and has a first surface and an opposing second surface that faces the first surface of the first carrier substrate. A semiconductor die is mounted on the first surface of the second carrier substrate. A heat spreader is disposed on the first surface of the first carrier substrate to cover and surround the second carrier substrate and the semiconductor die. A method for forming the semiconductor package structure is also provided.

公开(公告)号：US09704808B2

公开(公告)日：2017-07-11

申请号：US15006082

申请日：2016-01-25

Applicant: MEDIATEK INC.

Inventor： Shih-Yi Syu ,  Tung-Hsien Hsieh ,  Che-Ya Chou

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/66 ,  H01L23/00 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L25/065 ,  H01L23/29 ,  H01L23/525

CPC classification number: H01L23/5386 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/53228 ,  H01L23/5384 ,  H01L23/66 ,  H01L24/05 ,  H01L24/09 ,  H01L24/17 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/96 ,  H01L25/0655 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05013 ,  H01L2224/05015 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05553 ,  H01L2224/05555 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13147 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2224/244 ,  H01L2224/245 ,  H01L2224/25175 ,  H01L2224/73209 ,  H01L2924/01029 ,  H01L2924/14 ,  H01L2924/18162 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: An RDL structure on a passivation layer includes a first landing pad disposed directly above a first on-chip metal pad; a first via in a passivation layer to electrically connect the first landing pad with the first on-chip metal pad; a second landing pad disposed directly above the second on-chip metal pad; a second via in the passivation layer to electrically connect the second landing pad with the second on-chip metal pad; and at least five traces being disposed on the passivation layer and passing through a space between the first landing pad and the second landing pad.

公开(公告)号：US20170271265A1

公开(公告)日：2017-09-21

申请号：US15613144

申请日：2017-06-03

Applicant: MEDIATEK INC.

Inventor： Shih-Yi Syu ,  Tung-Hsien Hsieh ,  Che-Ya Chou

IPC: H01L23/538 ,  H01L23/522 ,  H01L25/065 ,  H01L23/00 ,  H01L23/532 ,  H01L23/498

CPC classification number: H01L23/5386 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/53228 ,  H01L23/5384 ,  H01L23/66 ,  H01L24/05 ,  H01L24/09 ,  H01L24/17 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/96 ,  H01L25/0655 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05013 ,  H01L2224/05015 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05553 ,  H01L2224/05555 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13147 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2224/244 ,  H01L2224/245 ,  H01L2224/25175 ,  H01L2224/73209 ,  H01L2924/01029 ,  H01L2924/14 ,  H01L2924/18162 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: An RDL structure on a passivation layer includes a first landing pad disposed directly above a first on-chip metal pad; a first via in a passivation layer to electrically connect the first landing pad with the first on-chip metal pad; a second landing pad disposed directly above the second on-chip metal pad; a second via in the passivation layer to electrically connect the second landing pad with the second on-chip metal pad; and at least five traces being disposed on the passivation layer and passing through a space between the first landing pad and the second landing pad.

公开(公告)号：US10224287B2

公开(公告)日：2019-03-05

申请号：US15613144

申请日：2017-06-03

Applicant: MEDIATEK INC.

Inventor： Shih-Yi Syu ,  Tung-Hsien Hsieh ,  Che-Ya Chou

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/66 ,  H01L23/00 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L25/065 ,  H01L23/29 ,  H01L23/525

Abstract: An RDL structure on a passivation layer includes a first landing pad disposed directly above a first on-chip metal pad; a first via in a passivation layer to electrically connect the first landing pad with the first on-chip metal pad; a second landing pad disposed directly above the second on-chip metal pad; a second via in the passivation layer to electrically connect the second landing pad with the second on-chip metal pad; and at least five traces being disposed on the passivation layer and passing through a space between the first landing pad and the second landing pad.

公开(公告)号：US20160276277A1

公开(公告)日：2016-09-22

申请号：US15006082

申请日：2016-01-25

Applicant: MEDIATEK INC.

Inventor： Shih-Yi Syu ,  Tung-Hsien Hsieh ,  Che-Ya Chou

IPC: H01L23/538 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L25/065 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/5386 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/53228 ,  H01L23/5384 ,  H01L23/66 ,  H01L24/05 ,  H01L24/09 ,  H01L24/17 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/96 ,  H01L25/0655 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05013 ,  H01L2224/05015 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05553 ,  H01L2224/05555 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13147 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2224/244 ,  H01L2224/245 ,  H01L2224/25175 ,  H01L2224/73209 ,  H01L2924/01029 ,  H01L2924/14 ,  H01L2924/18162 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: An RDL structure on a passivation layer includes a first landing pad disposed directly above a first on-chip metal pad; a first via in a passivation layer to electrically connect the first landing pad with the first on-chip metal pad; a second landing pad disposed directly above the second on-chip metal pad; a second via in the passivation layer to electrically connect the second landing pad with the second on-chip metal pad; and at least five traces being disposed on the passivation layer and passing through a space between the first landing pad and the second landing pad.

Abstract translation: 钝化层上的RDL结构包括直接设置在第一片上金属焊盘上方的第一着陆焊盘; 钝化层中的第一通孔，用于将第一着陆焊盘与第一片上金属焊盘电连接; 第二着陆焊盘，其设置在所述第二片上金属焊盘的正上方; 在所述钝化层中的第二通孔，用于将所述第二着陆焊盘与所述第二片上金属焊盘电连接; 并且至少五个迹线设置在钝化层上并且穿过第一着陆焊盘和第二着陆焊盘之间的空间。