公开(公告)号：US20060175686A1

公开(公告)日：2006-08-10

申请号：US11150252

申请日：2005-06-13

申请人： Koichi Murata ,  Masamitsu Ikumo ,  Eiji Watanabe

发明人： Koichi Murata ,  Masamitsu Ikumo ,  Eiji Watanabe

IPC分类号： H01L23/58

CPC分类号： H01L21/0206 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device fabrication method comprises the steps of: (a) forming a pad electrode on the semiconductor device; (b) coating the surface of the semiconductor device with an organic dielectric film so as to expose the center portion of the pad electrode; (c) treating the exposed surface of the pad electrode by dry etching; and (d) removing an altered layer produced in the organic dielectric film due to the dry etching for the surface treatment, using an oxygen-free dry process.

摘要翻译： 半导体器件制造方法包括以下步骤：（a）在半导体器件上形成焊盘电极; （b）用有机电介质膜涂覆半导体器件的表面以暴露焊盘电极的中心部分; （c）通过干蚀刻处理焊盘电极的暴露表面; 和（d）使用无氧干燥法除去由于用于表面处理的干蚀刻而在有机电介质膜中产生的改变的层。

公开(公告)号：US07355124B2

公开(公告)日：2008-04-08

申请号：US11180780

申请日：2005-07-14

申请人： Masamitsu Ikumo ,  Tadahiro Okamoto ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Tadahiro Okamoto ,  Eiji Watanabe

IPC分类号： H05K1/03

CPC分类号： H01L23/5385 ,  H01L21/481 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/13 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H05K3/0052 ,  H05K3/007 ,  H05K3/20 ,  H05K3/28 ,  H05K3/4682 ,  H05K2201/0187 ,  H05K2201/09036 ,  H05K2201/09518 ,  H05K2203/016 ,  Y10T29/49126 ,  Y10T428/24802 ,  Y10T428/24917 ,  H01L2224/0401

摘要： A multilayer wiring board having a plurality of wiring boards in which wiring layers and resin layers in each wiring board are alternately arranged in a laminated formation. In the multilayer wiring board, all the resin layers and the wiring layers, except a resin layer in the plurality of wiring boards, are separated in a same position between the plurality of wiring boards and the resin layer is continuous in the same position.

摘要翻译： 具有多个布线基板的多层布线基板，其中布线层和每个布线板中的树脂层交替地布置在层叠结构中。 在多层布线基板中，除了多个布线基板中的树脂层以外的所有树脂层和布线层在多个布线基板之间的相同位置分离，并且树脂层在相同位置连续。

公开(公告)号：US07417326B2

公开(公告)日：2008-08-26

申请号：US11374134

申请日：2006-03-14

申请人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

IPC分类号： H01L23/485

CPC分类号： H01L24/12 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/1132 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.

公开(公告)号：US08420522B2

公开(公告)日：2013-04-16

申请号：US12213819

申请日：2008-06-25

申请人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/1132 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.

摘要翻译： 半导体器件包括设置在半导体衬底的指定位置处的多个电极层，通过选择性地暴露电极层的指定区域和用于外部连接的突出电极而形成在半导体衬底上的有机绝缘膜，所述突起电极形成在 电极层的指定区域。 位于突出电极周围附近的有机绝缘膜的厚度大于位于突出电极之间的有机绝缘膜的厚度。

公开(公告)号：US07915538B2

公开(公告)日：2011-03-29

申请号：US12021548

申请日：2008-01-29

申请人： Masamitsu Ikumo ,  Tadahiro Okamoto ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Tadahiro Okamoto ,  Eiji Watanabe

IPC分类号： H05K1/03

CPC分类号： H01L23/5385 ,  H01L21/481 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/13 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H05K3/0052 ,  H05K3/007 ,  H05K3/20 ,  H05K3/28 ,  H05K3/4682 ,  H05K2201/0187 ,  H05K2201/09036 ,  H05K2201/09518 ,  H05K2203/016 ,  Y10T29/49126 ,  Y10T428/24802 ,  Y10T428/24917 ,  H01L2224/0401

摘要： A multilayer wiring board having a plurality of wiring boards in which wiring layers and resin layers in each wiring board are alternately arranged in a laminated formation. In the multilayer wiring board, all the resin layers and the wiring layers, except a resin layer in the plurality of wiring boards, are separated in a same position between the plurality of wiring boards and the resin layer is continuous in the same position.

摘要翻译： 具有多个配线基板的多层布线基板，其中布线层和每个布线板中的树脂层交替地布置在层叠结构中。 在多层布线基板中，除了多个布线基板中的树脂层以外的所有树脂层和布线层在多个布线基板之间的相同位置分离，并且树脂层在相同位置连续。

公开(公告)号：US20060219429A1

公开(公告)日：2006-10-05

申请号：US11180780

申请日：2005-07-14

申请人： Masamitsu Ikumo ,  Tadahiro Okamoto ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Tadahiro Okamoto ,  Eiji Watanabe

IPC分类号： H05K1/03 ,  H05K3/36

CPC分类号： H01L23/5385 ,  H01L21/481 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/13 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H05K3/0052 ,  H05K3/007 ,  H05K3/20 ,  H05K3/28 ,  H05K3/4682 ,  H05K2201/0187 ,  H05K2201/09036 ,  H05K2201/09518 ,  H05K2203/016 ,  Y10T29/49126 ,  Y10T428/24802 ,  Y10T428/24917 ,  H01L2224/0401

摘要： A multilayer wiring board comprises a plurality of wiring boards in which wiring layers and resin layers in each wiring board are alternately arranged in a laminated formation. In the multilayer wiring board, all the resin layers and the wiring layers, except a resin layer in the plurality of wiring boards, are separated in a same position between the plurality of wiring boards and the resin layer is continuous in the same position.

摘要翻译： 多层布线板包括多个布线板，其中布线层和每个布线板中的树脂层以叠层形式交替布置。 在多层布线基板中，除了多个布线基板中的树脂层以外的所有树脂层和布线层在多个布线基板之间的相同位置分离，并且树脂层在相同位置连续。

公开(公告)号：US20060214296A1

公开(公告)日：2006-09-28

申请号：US11156591

申请日：2005-06-21

申请人： Tadahiro Okamoto ,  Masamitsu Ikumo ,  Eiji Watanabe

发明人： Tadahiro Okamoto ,  Masamitsu Ikumo ,  Eiji Watanabe

IPC分类号： H01L23/52

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/11003 ,  H01L2224/1111 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/00014

摘要： In a semiconductor-device manufacturing method, a metal bump is formed through a plurality of barrier metal layers on an opening which is selectively formed in an insulation layer covering a semiconductor substrate. The metal bump is formed on the plurality of barrier metal layers. A first etching process that selectively removes a lower metal layer among the plurality of barrier metal layers is performed by using an upper metal layer among the plurality of barrier metal layers as a mask. A reflow process that covers an end face of the lower metal layer with a metal that forms the metal bump is performed. After the lower metal layer end face is covered with the metal, a second etching process that removes a barrier metal residue on a surface of the insulation layer in a circumference of the metal bump is performed.

摘要翻译： 在半导体器件制造方法中，通过选择性地形成在覆盖半导体衬底的绝缘层中的开口上的多个阻挡金属层形成金属凸块。 金属凸块形成在多个阻挡金属层上。 通过使用多个阻挡金属层中的上部金属层作为掩模，进行选择性地去除多个阻挡金属层中的下部金属层的第一蚀刻工艺。 执行用形成金属凸块的金属覆盖下金属层的端面的回流工艺。 在下金属层端面被金属覆盖之后，执行在金属凸块的周围去除绝缘层表面上的阻挡金属残渣的第二蚀刻工艺。

公开(公告)号：US20080293234A1

公开(公告)日：2008-11-27

申请号：US12213819

申请日：2008-06-25

申请人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/1132 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.

摘要翻译： 半导体器件包括设置在半导体衬底的指定位置处的多个电极层，通过选择性地暴露电极层的指定区域和用于外部连接的突出电极而形成在半导体衬底上的有机绝缘膜，所述突起电极形成在 电极层的指定区域。 位于突出电极周围附近的有机绝缘膜的厚度大于位于突出电极之间的有机绝缘膜的厚度。

公开(公告)号：US20070138635A1

公开(公告)日：2007-06-21

申请号：US11374134

申请日：2006-03-14

申请人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/12 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/1132 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.

摘要翻译： 半导体器件包括设置在半导体衬底的指定位置处的多个电极层，通过选择性地暴露电极层的指定区域和用于外部连接的突出电极而形成在半导体衬底上的有机绝缘膜，所述突起电极形成在 电极层的指定区域。 位于突出电极周围附近的有机绝缘膜的厚度大于位于突出电极之间的有机绝缘膜的厚度。

公开(公告)号：US20050151250A1

公开(公告)日：2005-07-14

申请号：US10998182

申请日：2004-11-29

申请人： Shuichi Chiba ,  Masahiko Ishiguri ,  Koichi Murata ,  Eiji Watanabe ,  Michiaki Tamagawa ,  Akira Satoh ,  Yasushi Toida ,  Kazuhiro Misawa

发明人： Shuichi Chiba ,  Masahiko Ishiguri ,  Koichi Murata ,  Eiji Watanabe ,  Michiaki Tamagawa ,  Akira Satoh ,  Yasushi Toida ,  Kazuhiro Misawa

IPC分类号： H01L21/288 ,  H01L21/60 ,  H01L23/00 ,  H01L23/485 ,  H01L23/544 ,  H01L29/40 ,  H01L29/78

CPC分类号： H01L24/05 ,  H01L21/2885 ,  H01L22/34 ,  H01L23/562 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12044 ,  H01L2924/19043 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate, a pad electrode formed on the substrate and a bump electrode formed on the pad electrode, wherein the pad electrode has an irregular flaw, and there is provided a pattern covering the irregular flaw between the pad electrode an the bump electrode.

摘要翻译： 半导体器件包括衬底，形成在衬底上的焊盘电极和形成在焊盘电极上的凸起电极，其中焊盘电极具有不规则的缺陷，并且提供覆盖焊盘电极与凸块之间的不规则缺陷的图案 电极。