- 专利标题: Semiconductor device and manufacturing method of the same
-
申请号: US11374134申请日: 2006-03-14
-
公开(公告)号: US07417326B2公开(公告)日: 2008-08-26
- 发明人: Masamitsu Ikumo , Hiroyuki Yoda , Eiji Watanabe
- 申请人: Masamitsu Ikumo , Hiroyuki Yoda , Eiji Watanabe
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权: JP2005-367210 20051220
- 主分类号: H01L23/485
- IPC分类号: H01L23/485
摘要:
A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.
公开/授权文献
信息查询
IPC分类: