公开(公告)号：US10469782B2

公开(公告)日：2019-11-05

申请号：US15713003

申请日：2017-09-22

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown

IPC: H04N5/372 ,  H04N5/369 ,  H01L27/148 ,  H04N5/3725 ,  H04N5/376 ,  G02B26/12 ,  G02B21/24

Abstract: A time delay and integration charge coupled device includes an array of pixels and a clock generator. The array of pixels is distributed in a scan direction and a line direction perpendicular to the scan direction in which at least some of the pixels of the array include three or more gates aligned in the scan direction. The clock generator provides clocking signals to transfer charge along the scan direction between two or more pixel groups including two or more pixels adjacent in the scan direction. The clocking signals include phase signals to transfer the charge to an adjacent pixel group along the scan direction at a rate corresponding to the velocity of the target by driving the gates of the two or more pixel groups and generating a common potential well per pixel group for containing charge generated in response to incident illumination.

公开(公告)号：US10462391B2

公开(公告)日：2019-10-29

申请号：US15210056

申请日：2016-07-14

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  David L. Brown ,  Devis Contarato ,  John Fielden ,  Daniel I. Kavaldjiev ,  Guoheng Zhao ,  Jehn-Huar Chern ,  Guowu Zheng ,  Donald W. Pettibone ,  Stephen Biellak

IPC: H04N5/335 ,  G01N21/95 ,  G06T7/00 ,  H04N5/225 ,  H04N5/347 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/376 ,  G01N21/956

Abstract: An inspection system and methods in which analog image data values (charges) captured by an image sensor are binned (combined) before or while being transmitted as output signals on the image sensor's output sensing nodes (floating diffusions), and in which an ADC is controlled to sequentially generate multiple corresponding digital image data values between each reset of the output sensing nodes. According to an output binning method, the image sensor is driven to sequentially transfer multiple charges onto the output sensing nodes between each reset, and the ADC is controlled to convert the incrementally increasing output signal after each charge is transferred onto the output sensing node. According to a multi-sampling method, multiple charges are vertically or horizontally binned (summed/combined) before being transferred onto the output sensing node, and the ADC samples each corresponding output signal multiple times. The output binning and multi-sampling methods may be combined.

公开(公告)号：US20190131465A1

公开(公告)日：2019-05-02

申请号：US16151225

申请日：2018-10-03

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: H01L31/0216 ,  G01N21/956 ,  H01L27/146 ,  G01N21/95 ,  H01L27/148 ,  G01N21/88

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

公开(公告)号：US20180233872A1

公开(公告)日：2018-08-16

申请号：US15948141

申请日：2018-04-09

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Justin Dianhuan Liou ,  Vladimir Dribinski ,  David L. Brown

IPC: H01S3/00 ,  G01N21/95 ,  G02B5/08 ,  H01S3/083 ,  G01N21/21 ,  G02B27/28 ,  G02B5/30

CPC classification number: H01S3/0057 ,  G01N21/21 ,  G01N21/9501 ,  G01N2201/06113 ,  G01N2201/0683 ,  G01N2201/0697 ,  G02B5/0816 ,  G02B5/3083 ,  G02B27/281 ,  G02B27/283 ,  G02B27/286 ,  H01S3/083

Abstract: A pulse multiplier includes a polarizing beam splitter, a wave plate, and a set of multi-surface reflecting components (e.g., one or more etalons and one or more mirrors). The polarizing beam splitter passes input laser pulses through the wave plate to the multi-surface reflecting components, which reflect portions of each input laser pulse back through the wave plate to the polarizing beam splitter. The polarizing beam splitter reflects each reflected portion to form an output of the pulse multiplier. The multi-surface reflecting components are configured such that the output pulses exiting the pulse multiplier have an output repetition pulse frequency rate that is at least double the input repetition pulse frequency.

公开(公告)号：US20180091751A1

公开(公告)日：2018-03-29

申请号：US15713003

申请日：2017-09-22

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown

IPC: H04N5/372 ,  H04N5/3745 ,  G02B26/12

CPC classification number: H04N5/372 ,  G02B21/245 ,  G02B26/128 ,  H01L27/14856 ,  H04N5/3698 ,  H04N5/37206 ,  H04N5/37213 ,  H04N5/3725 ,  H04N5/3765 ,  H04N2201/04782 ,  H04N2201/04784

Abstract: A time delay and integration charge coupled device includes an array of pixels and a clock generator. The array of pixels is distributed in a scan direction and a line direction perpendicular to the scan direction in which at least some of the pixels of the array include three or more gates aligned in the scan direction. The clock generator provides clocking signals to transfer charge along the scan direction between two or more pixel groups including two or more pixels adjacent in the scan direction. The clocking signals include phase signals to transfer the charge to an adjacent pixel group along the scan direction at a rate corresponding to the velocity of the target by driving the gates of the two or more pixel groups and generating a common potential well per pixel group for containing charge generated in response to incident illumination.

公开(公告)号：US20180070040A1

公开(公告)日：2018-03-08

申请号：US15806913

申请日：2017-11-08

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

IPC: H04N5/3722

CPC classification number: H04N5/3722 ,  G01N21/956 ,  G01N2201/12

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

公开(公告)号：US20160300701A1

公开(公告)日：2016-10-13

申请号：US15189871

申请日：2016-06-22

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  David L. Brown ,  John Fielden

IPC: H01J40/06 ,  H01L31/103 ,  H01L31/0216 ,  H01J43/08

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A system for inspecting a sample including a detector, either a photomultiplier tube or an electron-bombarded image sensor, that is positioned to receive light from the sample. The detector includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. The semiconductor photocathode includes silicon, and further includes a pure boron coating on at least one surface.

Abstract translation: 用于检查包括检测器，光电倍增管或电子轰击图像传感器的样品的系统，其被定位成接收来自样品的光。 检测器包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极包括硅，并且在至少一个表面上还包括纯硼涂层。

公开(公告)号：US09377414B2

公开(公告)日：2016-06-28

申请号：US14242802

申请日：2014-04-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Richard W. Solarz ,  David R. Shafer ,  Bin-Ming Benjamin Tsai ,  David L. Brown

IPC: G01N21/95 ,  G01N21/956 ,  G01N21/88

CPC classification number: G01N21/95 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/068 ,  G03F1/84 ,  G03F7/70616 ,  H05G2/008

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

公开(公告)号：US20150177159A1

公开(公告)日：2015-06-25

申请号：US14273424

申请日：2014-05-08

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Chuang ,  John Fielden

IPC: G01N21/88

CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/14636 ,  H01L31/02 ,  H04N5/3577 ,  H04N5/3765

Abstract: A method of inspecting a sample at high speed includes directing and focusing radiation onto a sample, and receiving radiation from the sample and directing received radiation to an image sensor. Notably, the method includes driving the image sensor with predetermined signals. The predetermined signals minimize a settling time of an output signal of the image sensor. The predetermined signals are controlled by a phase accumulator, which is used to select look-up values. The driving can further include loading an initial phase value, selecting most significant bits of the phase accumulator, and converting the look-up values to an analog signal. In one embodiment, for each cycle of a phase clock, a phase increment can be added to the phase accumulator. The driving can be performed by a custom waveform generator.

Abstract translation: 高速检查样品的方法包括将辐射引导和聚焦到样品上，并且接收来自样品的辐射并将接收的辐射引导到图像传感器。 值得注意的是，该方法包括以预定信号驱动图像传感器。 预定信号最小化图像传感器的输出信号的建立时间。 预定信号由相位累加器控制，该相位累加器用于选择查找值。 驱动还可以包括加载初始相位值，选择相位累加器的最高有效位，以及将查找值转换为模拟信号。 在一个实施例中，对于相位时钟的每个周期，相位增量可以被加到相位累加器。 驱动可由自定义波形发生器执行。

公开(公告)号：US20140291493A1

公开(公告)日：2014-10-02

申请号：US14198175

申请日：2014-03-05

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  David L. Brown ,  John Fielden

IPC: H01L31/11 ,  H01L31/167

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及形成在p掺杂半导体层的第二表面上的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其他实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。