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公开(公告)号：US09377414B2
公开(公告)日：2016-06-28
申请号：US14242802
申请日：2014-04-01
Applicant: KLA-Tencor Corporation
Inventor： Yung-Ho Chuang , Richard W. Solarz , David R. Shafer , Bin-Ming Benjamin Tsai , David L. Brown
IPC: G01N21/95 , G01N21/956 , G01N21/88
CPC classification number: G01N21/95 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , G01N2201/068 , G03F1/84 , G03F7/70616 , H05G2/008
Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.
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2.发明授权EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers 有权EUV高通量检测系统，用于在图案化的EUV掩模，掩模毛坯和晶片上进行缺陷检测公开(公告)号：US08692986B2
公开(公告)日：2014-04-08
申请号：US14014142
申请日：2013-08-29
Applicant: KLA-Tencor Corporation
Inventor： Yung-Ho Chuang , Richard W. Solarz , David R. Shafer , Bin-Ming Benjamin Tsai , David L. Brown
IPC: G01N21/00
CPC classification number: G01N21/95 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , G01N2201/068 , G03F1/84 , G03F7/70616 , H05G2/008
Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.
Abstract translation: 对EUV图案化掩模，空白掩模和由EUV图案化掩模生成的图案化晶片的检查需要高倍率和在图像平面上的大视场。 EUV检查系统可以包括指向检查表面的光源，用于检测从被检查表面偏转的光的检测器和用于将来自被检查表面的光引导到检测器的光学配置。 特别地，检测器可以包括多个传感器模块。 另外，光学配置可以包括在小于5米长的光路内提供至少100倍的放大倍数的多个反射镜。 在一个实施例中，光路大约2-3米长。
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3.发明申请EUV High Throughput Inspection System For Defect Detection On Patterned EUV Masks, Mask Blanks, And Wafers 有权EUV高通量检测系统，用于在图案化的EUV面罩，面罩空白和晶圆上进行缺陷检测公开(公告)号：US20140217299A1
公开(公告)日：2014-08-07
申请号：US14242802
申请日：2014-04-01
Applicant: KLA-Tencor Corporation
Inventor： Yung-Ho Chuang , Richard W. Solarz , David R. Shafer , Bin-Ming Benjamin Tsai , David L. Brown
IPC: G01N21/95
CPC classification number: G01N21/95 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , G01N2201/068 , G03F1/84 , G03F7/70616 , H05G2/008
Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.
Abstract translation: 对EUV图案化掩模，空白掩模和由EUV图案化掩模生成的图案化晶片的检查需要高倍率和在图像平面上的大视场。 EUV检查系统可以包括指向检查表面的光源，用于检测从被检查表面偏转的光的检测器和用于将来自被检查表面的光引导到检测器的光学配置。 特别地，检测器可以包括多个传感器模块。 另外，光学配置可以包括在小于5米长的光路内提供至少100倍的放大倍数的多个反射镜。 在一个实施例中，光路大约2-3米长。
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公开(公告)号：US20140001370A1
公开(公告)日：2014-01-02
申请号：US14014142
申请日：2013-08-29
Applicant: KLA-Tencor Corporation
Inventor： Yung-Ho Chuang , Richard W. Solarz , David R. Shafer , Bin-Ming Benjamin Tsai , David L. Brown
IPC: G01N21/88
CPC classification number: G01N21/95 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , G01N2201/068 , G03F1/84 , G03F7/70616 , H05G2/008
Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.
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