公开(公告)号：US11130270B2

公开(公告)日：2021-09-28

申请号：US16452072

申请日：2019-06-25

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC分类号： H01L29/78 ,  B29C48/49 ,  H01L29/66 ,  B29C48/21 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10 ,  H01G4/20 ,  H01L29/08 ,  B29C37/00 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/266 ,  H01L27/088 ,  B29K23/00 ,  B29K105/16 ,  B29K507/04 ,  B29L9/00 ,  B29L31/34

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US10593805B2

公开(公告)日：2020-03-17

申请号：US16585651

申请日：2019-09-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/266 ,  H01L21/265 ,  H01G4/33 ,  H01G4/30 ,  H01G4/228 ,  H01G4/14 ,  H01G4/005 ,  B32B27/36 ,  B32B27/34 ,  B32B27/32 ,  B32B27/30 ,  B32B27/28 ,  B32B27/08 ,  B32B27/00 ,  B32B7/02 ,  B32B3/08 ,  B29C37/00 ,  H01L29/66 ,  H01L29/06 ,  B29C48/49 ,  B29C48/21 ,  H01G4/20 ,  B29L31/34 ,  B29L9/00 ,  B29K507/04 ,  B29K105/16 ,  B29K23/00

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US10381484B2

公开(公告)日：2019-08-13

申请号：US15724803

申请日：2017-10-04

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC分类号： H01G4/30 ,  H01L29/78 ,  H01L29/66 ,  B29C48/21 ,  B29C48/49 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  B29C37/00 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/33 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/266 ,  H01L27/088 ,  B29K23/00 ,  B29K105/16 ,  B29K507/04 ,  B29L9/00 ,  B29L31/34

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US10381483B2

公开(公告)日：2019-08-13

申请号：US15474078

申请日：2017-03-30

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC分类号： H01L29/78 ,  H01L29/66 ,  B29C48/21 ,  B29C48/49 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  B29C37/00 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/266 ,  H01L27/088 ,  B29K23/00 ,  B29K105/16 ,  B29K507/04 ,  B29L9/00 ,  B29L31/34

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US20180337284A1

公开(公告)日：2018-11-22

申请号：US16034576

申请日：2018-07-13

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. Campi, JR. ,  Robert J. Gauthier, JR. ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/266 ,  H01L21/265 ,  H01G4/33 ,  H01G4/30 ,  H01G4/228 ,  H01G4/14 ,  H01G4/005 ,  B32B27/36 ,  B32B27/34 ,  B32B27/32 ,  B32B27/30 ,  B32B27/28 ,  B32B27/08 ,  B32B27/00 ,  B32B7/02 ,  B32B3/08 ,  B29C47/56 ,  B29C47/06 ,  B29C37/00 ,  B29K23/00 ,  B29L31/34 ,  B29L9/00 ,  B29K507/04 ,  B29K105/16

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US09818542B2

公开(公告)日：2017-11-14

申请号：US14882800

申请日：2015-10-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC分类号： H01L21/8234 ,  H01G4/30 ,  B29C37/00 ,  B29C47/06 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/33 ,  B29C47/56 ,  B32B27/00 ,  B32B7/02 ,  B32B27/08 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B3/08 ,  B29K23/00 ,  B29K105/16 ,  B29K507/04 ,  B29L9/00 ,  B29L31/34

CPC分类号： H01L29/7856 ,  B29C37/0025 ,  B29C47/065 ,  B29C47/56 ,  B29K2023/12 ,  B29K2105/16 ,  B29K2507/04 ,  B29K2995/0005 ,  B29K2995/0007 ,  B29L2009/003 ,  B29L2009/005 ,  B29L2031/34 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/12 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/518 ,  B32B2307/732 ,  B32B2457/16 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7851 ,  H01L2029/7858

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US09391065B1

公开(公告)日：2016-07-12

申请号：US14753628

申请日：2015-06-29

申请人： International Business Machines Corporation

发明人： Robert J. Gauthier, Jr. ,  Tom C. Lee ,  You Li ,  Rahul Mishra ,  Souvick Mitra ,  Andreas Scholze

IPC分类号： H01L29/66 ,  H01L27/12 ,  H01L23/495 ,  H01L27/02 ,  H01L27/06 ,  H01L29/78

CPC分类号： H01L27/0255 ,  H01L27/0266 ,  H01L27/027 ,  H01L27/0288 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/0684 ,  H01L29/42372 ,  H01L29/7827 ,  H01L29/785 ,  H01L29/7855 ,  H01L2029/7858

摘要： Field effect diode structures utilize a junction structure that has an L-shape in cross-section (a fin extending from a planar portion). An anode is positioned at the top surface of the fin, and a cathode is positioned at the end surface of the planar portion. The perpendicularity of the fin and the planar portion cause the anode and cathode to be perpendicular to one another. A first gate insulator contacts the fin between the top surface and the planar portion. A first gate conductor contacts the first gate insulator, and the first gate insulator is between the first gate conductor and the surface of the fin. Additionally, a second gate insulator contacts the planar portion between the end surface and the fin. A second gate conductor contacts the second gate insulator, and the second gate insulator is between the second gate conductor and the surface of the planar portion.

摘要翻译： 场效应二极管结构使用横截面为L形的接合结构（从平面部分延伸的翅片）。 阳极位于翅片的顶面，阴极位于平面部分的端面。 翅片和平面部分的垂直度导致阳极和阴极彼此垂直。 第一栅极绝缘体在顶表面和平面部分之间接触翅片。 第一栅极导体接触第一栅极绝缘体，并且第一栅极绝缘体位于第一栅极导体与鳍的表面之间。 另外，第二栅极绝缘体接触端面和鳍之间的平面部分。 第二栅极导体与第二栅极绝缘体接触，第二栅极绝缘体位于第二栅极导体与平面部分的表面之间。

公开(公告)号：US20150341387A1

公开(公告)日：2015-11-26

申请号：US14282667

申请日：2014-05-20

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Thuanan Ho ,  Rahul Mishra ,  Miguel Pedroza ,  Ori Pomerantz

IPC分类号： H04L29/06

CPC分类号： H04L63/20 ,  H04L29/06 ,  H04L63/08 ,  H04L63/10 ,  H04L63/168

摘要： A method, system and computer-usable medium are disclosed for automating the identification of web form parameters for an authorization engine. A web page containing a set of parameters is received and then processed to identify structured portions it may contain. A target structured portion is then selected and processed to identify a corresponding set of web form parameters. Once identified, the set of web form parameters are then processed to generate a policy with a corresponding set of policy rule parameters. Matching operations are then performed to respectively match individual parameters of the set of web form parameters to individual parameters of the set of policy rule parameters. The policy is then associated with its associated web page URL and the process is repeated, proceeding with selecting another target structured portion to process.

摘要翻译： 公开了一种方法，系统和计算机可用介质，用于自动化用于授权引擎的web表单参数的识别。 收到包含一组参数的网页，然后处理以识别其可能包含的结构化部分。 然后选择和处理目标结构化部分以识别相应的一组web表单参数。 一旦被识别，然后处理一组web表单参数以生成具有相应的一组策略规则参数的策略。 然后执行匹配操作以将web表单参数集的各个参数与策略规则参数集合中的各个参数相匹配。 然后将该策略与其关联的网页URL相关联，并重复该过程，继续选择另一个目标结构化部分进行处理。

公开(公告)号：US09059278B2

公开(公告)日：2015-06-16

申请号：US13959777

申请日：2013-08-06

申请人： International Business Machines Corporation

发明人： John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Junjun Li ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/08

CPC分类号： H01L27/0928 ,  H01L21/761 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/092 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7801 ,  H01L29/7816 ,  H01L29/7835

摘要： Disclosed are semiconductor structures. Each semiconductor structure can comprise a substrate and at least one laterally double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) on the substrate. Each LDMOSFET can have a fully-depleted deep drain drift region (i.e., a fully depleted deep ballast resistor region) for providing a relatively high blocking voltage. Different configurations for the drain drift regions are disclosed and these different configurations can also vary as a function of the conductivity type of the LDMOSFET. Additionally, each semiconductor structure can comprise an isolation band positioned below the LDMOSFET and an isolation well positioned laterally around the LDMOSFET and extending vertically to the isolation band such that the LDMOSFET is electrically isolated from both a lower portion of the substrate and any adjacent devices on the substrate.

摘要翻译： 公开了半导体结构。 每个半导体结构可以包括衬底和在衬底上的至少一个横向双扩散金属氧化物半导体场效应晶体管（LDMOSFET）。 每个LDMOSFET可以具有完全耗尽的深漏极漂移区域（即完全耗尽的深度镇流电阻器区域），用于提供相对较高的阻塞电压。 公开了漏极漂移区域的不同配置，并且这些不同的配置也可以作为LDMOSFET的导电类型的函数而变化。 另外，每个半导体结构可以包括位于LDMOSFET下方的隔离带以及围绕LDMOSFET横向地定位并且垂直延伸到隔离带的隔离阱，使得LDMOSFET与衬底的下部分和任何相邻器件电隔离 底物。

公开(公告)号：US11141902B2

公开(公告)日：2021-10-12

申请号：US16452836

申请日：2019-06-26

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC分类号： H01L29/78 ,  B29C48/49 ,  H01L29/66 ,  B29C48/21 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10 ,  H01G4/20 ,  H01L29/08 ,  B29C37/00 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/266 ,  H01L27/088 ,  B29K23/00 ,  B29K105/16 ,  B29K507/04 ,  B29L9/00 ,  B29L31/34

摘要： A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.