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    Semiconductor on insulator MOSFET having strained silicon channel
    5.
    发明授权
    Semiconductor on insulator MOSFET having strained silicon channel 有权
    具有应变硅沟道的半导体绝缘体MOSFET

    公开(公告)号：US06943087B1

    公开(公告)日：2005-09-13

    申请号：US10738529

    申请日：2003-12-17

    申请人： Qi Xiang ,  Jung-Suk Goo ,  James N. Pan ,  Ming Ren Lin

    发明人： Qi Xiang ,  Jung-Suk Goo ,  James N. Pan ,  Ming Ren Lin

    IPC分类号： H01L21/331 ,  H01L21/8222

    CPC分类号： H01L29/66545 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/66772 ,  H01L29/7848 ,  H01L29/78654

    摘要： Strained silicon is grown on a dielectric material in a trench in a silicon germanium layer at a channel region of a MOSFET after fabrication of other MOSFET elements using a removable dummy gate process to form an SOI MOSFET. The MOSFET is fabricated with the dummy gate in place, the dummy gate is removed, and a trench is formed in the channel region. Dielectric material is grown in the trench, and strained silicon is then grown from the silicon germanium trench sidewalls to form a strained silicon layer that extends across the dielectric material. The silicon germanium sidewalls impart strain to the strained silicon, and the presence of the dielectric material allows the strained silicon to be grown as a thin fully depleted layer. A replacement gate is then formed by damascene processing.

    摘要翻译： 在使用可移除的虚拟栅极工艺制造其它MOSFET元件以形成SOI MOSFET之后，将应变硅在MOSFET的沟道区的硅锗层中的沟槽中的电介质材料上生长。 MOSFET由虚拟栅极制造在位，虚拟栅极被去除，并且在沟道区域中形成沟槽。 电介质材料在沟槽中生长，然后从硅锗沟槽侧壁生长应变硅，以形成延伸穿过电介质材料的应变硅层。 硅锗侧壁对应变硅施加应变，并且电介质材料的存在允许应变硅作为薄的完全耗尽层生长。 然后通过镶嵌加工形成替换浇口。

    Method of fabricating an integrated circuit channel region
    6.
    发明授权
    Method of fabricating an integrated circuit channel region 有权
    制造集成电路通道区域的方法

    公开(公告)号：US07138302B2

    公开(公告)日：2006-11-21

    申请号：US10755763

    申请日：2004-01-12

    申请人： Qi Xiang ,  James N. Pan ,  Jung-Suk Goo

    发明人： Qi Xiang ,  James N. Pan ,  Jung-Suk Goo

    IPC分类号： H01L21/335 ,  H01L21/84 ,  H01L21/338 ,  H01L21/8249 ,  H01L27/01

    CPC分类号： H01L29/785 ,  H01L29/66795 ,  H01L29/7842

    摘要： An exemplary embodiment relates to a method of FinFET channel structure formation. The method can include providing a compound semiconductor layer above an insulating layer, providing a trench in the compound semiconductor layer, and providing a strained semiconductor layer above the compound semiconductor layer and within the trench. The method can also include removing the strained semiconductor layer from above the compound semiconductor layer, thereby leaving the strained semiconductor layer within the trench and removing the compound semiconductor layer to leave the strained semiconductor layer and form the fin-shaped channel region.

    摘要翻译： 示例性实施例涉及FinFET沟道结构形成的方法。 该方法可以包括在绝缘层之上提供化合物半导体层，在化合物半导体层中提供沟槽，并在化合物半导体层之上和沟槽内提供应变半导体层。 该方法还可以包括从化合物半导体层上方去除应变半导体层，从而将应变半导体层留在沟槽内，并去除化合物半导体层以留下应变半导体层并形成鳍状沟道区。

    Strained silicon semiconductor on insulator MOSFET
    10.
    发明授权
    Strained silicon semiconductor on insulator MOSFET 有权
    应变硅半导体绝缘体MOSFET

    公开(公告)号：US07033869B1

    公开(公告)日：2006-04-25

    申请号：US10755896

    申请日：2004-01-13

    申请人： Qi Xiang ,  Jung-Suk Goo ,  James N. Pan

    发明人： Qi Xiang ,  Jung-Suk Goo ,  James N. Pan

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L27/01 ,  H01L27/12

    CPC分类号： H01L29/66545 ,  H01L29/4908 ,  H01L29/78687

    摘要： An SOI substrate comprises a layer of strained silicon sandwiched between a dielectric layer and a layer of strained silicon. The substrate may be used to form a strained silicon SOI MOSFET having a gate electrode that extends through the silicon germanium layer to a channel region formed in the strained silicon layer. The MOSFET may be formed in a fully depleted state by using a strained silicon layer of appropriate thickness.

    摘要翻译： SOI衬底包括夹在电介质层和应变硅层之间的应变层的层。 衬底可以用于形成具有延伸穿过硅锗层的栅电极到形成在应变硅层中的沟道区的应变硅SOI MOSFET。 可以通过使用适当厚度的应变硅层，在完全耗尽状态下形成MOSFET。