Invention Grant
- Patent Title: Formation of finFET using a sidewall epitaxial layer
- Patent Title (中): 使用侧壁外延层形成finFET
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Application No.: US10654631Application Date: 2003-09-03
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Publication No.: US07078299B2Publication Date: 2006-07-18
- Inventor: Witold P. Maszara , Jung-Suk Goo , James N. Pan , Qi Xiang
- Applicant: Witold P. Maszara , Jung-Suk Goo , James N. Pan , Qi Xiang
- Applicant Address: US TX Austi
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austi
- Agency: Foley & Lardner, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of forming a finFET transistor using a sidewall epitaxial layer includes forming a silicon germanium (SiGe) layer above an oxide layer above a substrate, forming a cap layer above the SiGe layer, removing portions of the SiGe layer and the cap layer to form a feature, forming sidewalls along lateral walls of the feature, and removing the feature.
Public/Granted literature
- US20050048727A1 FORMATION OF FINFET USING A SIDEWALL EPITAXIAL LAYER Public/Granted day:2005-03-03
Information query
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