Shallow trench isolation process and structure with minimized strained silicon consumption

Invention Grant

US07732336B2 Shallow trench isolation process and structure with minimized strained silicon consumption 有权

Title translation: 浅沟槽隔离工艺和结构，使应变硅消耗最小化

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Patent Title: Shallow trench isolation process and structure with minimized strained silicon consumption
Patent Title (中): 浅沟槽隔离工艺和结构，使应变硅消耗最小化
Application No.: US12115473

Application Date: 2008-05-05
Publication No.: US07732336B2

Publication Date: 2010-06-08
Inventor: Qi Xiang , James N. Pan , Jung-Suk Goo
Applicant: Qi Xiang , James N. Pan , Jung-Suk Goo
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES Inc.
Current Assignee: GLOBALFOUNDRIES Inc.
Current Assignee Address: KY Grand Cayman
Agency: Ditthavong, Mori & Steiner, P.C.
Main IPC: H01L21/311
IPC: H01L21/311

Shallow trench isolation process and structure with minimized strained silicon consumption

Abstract:

A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The strained material is formed after the trench is formed. The process can be utilized on a compound semiconductor layer above a box layer.

Abstract(Chinese):

集成电路（IC）的制造方法利用浅沟槽隔离（STI）技术。浅沟槽隔离技术用于应变硅（SMOS）工艺。在形成沟槽之后形成应变材料。该方法可以用在盒层上方的化合物半导体层上。

Public/Granted literature

US20080213952A1 SHALLOW TRENCH ISOLATION PROCESS AND STRUCTURE WITH MINIMIZED STRAINED SILICON CONSUMPTION Public/Granted day:2008-09-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀