公开(公告)号：US09147745B2

公开(公告)日：2015-09-29

申请号：US13981808

申请日：2012-07-24

Applicant: Huilong Zhu ,  Qingqing Liang ,  Huicai Zhong ,  Hao Wu

Inventor： Huilong Zhu ,  Qingqing Liang ,  Huicai Zhong ,  Hao Wu

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L29/66477 ,  H01L21/2815 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7848 ,  H01L29/78618 ,  H01L29/78639 ,  H01L29/78654

Abstract: Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the method comprises: sequentially forming a sacrificial layer and a semiconductor layer on a substrate; forming a first cover layer on the semiconductor layer; forming an opening extending into the substrate with the first cover layer as a mask; selectively removing at least a portion of the sacrificial layer through the opening, and filling an insulating material in a gap due to removal of the sacrificial layer; forming one of source and drain regions in the opening; forming a second cover layer on the substrate; forming the other of the source and drain regions with the second cover layer as a mask; removing a portion of the second cover layer; and forming a gate dielectric layer, and forming a gate conductor in the form of spacer on a sidewall of a remaining portion of the second cover layer.

Abstract translation: 公开了半导体装置及其制造方法。 在一个实施例中，该方法包括：在衬底上顺序形成牺牲层和半导体层; 在所述半导体层上形成第一覆盖层; 形成以第一覆盖层为掩模延伸到基板的开口; 通过所述开口选择性地去除所述牺牲层的至少一部分，并且由于去除所述牺牲层而在绝缘材料中填充绝缘材料; 在开口中形成源极和漏极区域之一; 在所述基板上形成第二覆盖层; 以第二覆盖层为掩模形成源区和漏区中的另一个; 去除所述第二覆盖层的一部分; 以及形成栅极电介质层，并且在所述第二覆盖层的剩余部分的侧壁上形成隔板形式的栅极导体。

公开(公告)号：US20140110756A1

公开(公告)日：2014-04-24

申请号：US13981808

申请日：2012-07-24

Applicant: Huilong Zhu ,  Qingqing Liang ,  Huicai Zhong ,  Hao Wu

Inventor： Huilong Zhu ,  Qingqing Liang ,  Huicai Zhong ,  Hao Wu

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66477 ,  H01L21/2815 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7848 ,  H01L29/78618 ,  H01L29/78639 ,  H01L29/78654

Abstract: Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the method comprises: sequentially forming a sacrificial layer and a semiconductor layer on a substrate; forming a first cover layer on the semiconductor layer; forming an opening extending into the substrate with the first cover layer as a mask; selectively removing at least a portion of the sacrificial layer through the opening, and filling an insulating material in a gap due to removal of the sacrificial layer; forming one of source and drain regions in the opening; forming a second cover layer on the substrate; forming the other of the source and drain regions with the second cover layer as a mask; removing a portion of the second cover layer; and forming a gate dielectric layer, and forming a gate conductor in the form of spacer on a sidewall of a remaining portion of the second cover layer.

Abstract translation: 公开了半导体装置及其制造方法。 在一个实施例中，该方法包括：在衬底上顺序形成牺牲层和半导体层; 在所述半导体层上形成第一覆盖层; 形成以第一覆盖层为掩模延伸到基板的开口; 通过所述开口选择性地去除所述牺牲层的至少一部分，并且由于去除所述牺牲层而在绝缘材料中填充绝缘材料; 在开口中形成源极和漏极区域之一; 在所述基板上形成第二覆盖层; 以第二覆盖层为掩模形成源区和漏区中的另一个; 去除所述第二覆盖层的一部分; 以及形成栅极电介质层，并且在所述第二覆盖层的剩余部分的侧壁上形成隔板形式的栅极导体。

公开(公告)号：US20120267725A1

公开(公告)日：2012-10-25

申请号：US13379357

申请日：2011-04-26

Applicant: Huilong Zhu ,  Binneng Wu ,  Weiping Xiao ,  Hao Wu ,  Qingqing Liang

Inventor： Huilong Zhu ,  Binneng Wu ,  Weiping Xiao ,  Hao Wu ,  Qingqing Liang

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/66537 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/66545 ,  H01L29/66553

Abstract: Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects.

Abstract translation: 公开了半导体结构及其制造方法。 半导体结构包括：形成在半导体衬底上的栅叠层; 嵌入在所述半导体衬底中并与所述栅叠层自对准的超陡逆行岛; 以及嵌入在所述超陡逆行岛中的反掺杂区，其中所述反掺杂区具有与所述超陡逆行岛的掺杂类型相反的掺杂类型。 半导体结构及其制造方法有助于缓解短沟道效应。

公开(公告)号：US08809955B2

公开(公告)日：2014-08-19

申请号：US13379357

申请日：2011-04-26

Applicant: Huilong Zhu ,  Binneng Wu ,  Weiping Xiao ,  Hao Wu ,  Qingqing Liang

Inventor： Huilong Zhu ,  Binneng Wu ,  Weiping Xiao ,  Hao Wu ,  Qingqing Liang

IPC: H01L29/786 ,  H01L21/8236 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/66537 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/66545 ,  H01L29/66553

Abstract: Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects.

Abstract translation: 公开了半导体结构及其制造方法。 半导体结构包括：形成在半导体衬底上的栅叠层; 嵌入在所述半导体衬底中并与所述栅叠层自对准的超陡逆行岛; 以及嵌入在所述超陡逆行岛中的反掺杂区域，其中所述反掺杂区域具有与所述超陡逆行岛的掺杂类型相反的掺杂类型。 半导体结构及其制造方法有助于缓解短沟道效应。

公开(公告)号：US08461650B2

公开(公告)日：2013-06-11

申请号：US13202221

申请日：2011-03-03

Applicant: Huilong Zhu ,  Hao Wu ,  Weiping Xiao

Inventor： Huilong Zhu ,  Hao Wu ,  Weiping Xiao

IPC: H01L27/12 ,  H01L21/84 ,  H01L21/336

CPC classification number: H01L29/785 ,  H01L21/26586 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/78612

Abstract: Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions abutting opposite first side faces of the semiconductor body; gates located on opposite second side faces of the semiconductor body; a channel layer interposed between the respective second side faces and the cavity; and a super-steep-retrograded-well and a halo super-steep-retrograded-well formed in the channel layer. The super-steep-retrograded-well and the halo super-steep-retrograded-well have opposite dopant polarities.

Abstract translation: 公开了半导体装置及其制造方法。 在一个实施例中，半导体器件包括半导体衬底; 位于所述半导体衬底上的绝缘层; 位于所述绝缘层上的半导体本体; 在半导体本体中形成并进入绝缘层的空腔; 源极/漏极区域邻接半导体本体的相对的第一侧面; 位于半导体本体的相对的第二侧面上的门; 插入在相应的第二侧面和空腔之间的沟道层; 并且在通道层中形成了一个超级陡峭的后退井和一个光晕超陡峭的回归井。 超级陡峭后退井和光晕超陡倾斜井具有相反的掺杂极性。

公开(公告)号：US20120319190A1

公开(公告)日：2012-12-20

申请号：US13202221

申请日：2011-03-03

Applicant: Huilong Zhu ,  Hao Wu ,  Weiping Xiao

Inventor： Huilong Zhu ,  Hao Wu ,  Weiping Xiao

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/785 ,  H01L21/26586 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/78612

Abstract: Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions abutting opposite first side faces of the semiconductor body; gates located on opposite second side faces of the semiconductor body; a channel layer interposed between the respective second side faces and the cavity; and a super-steep-retrograded-well and a halo super-steep-retrograded-well formed in the channel layer. The super-steep-retrograded-well and the halo super-steep-retrograded-well have opposite dopant polarities.

Abstract translation: 公开了半导体装置及其制造方法。 在一个实施例中，半导体器件包括半导体衬底; 位于所述半导体衬底上的绝缘层; 位于所述绝缘层上的半导体本体; 在半导体本体中形成并进入绝缘层的空腔; 源极/漏极区域邻接半导体本体的相对的第一侧面; 位于半导体本体的相对的第二侧面上的门; 插入在相应的第二侧面和空腔之间的沟道层; 并且在通道层中形成了一个超级陡峭的后退井和一个光晕超陡峭的回归井。 超级陡峭后退井和光晕超陡倾斜井具有相反的掺杂极性。

公开(公告)号：US09562242B2

公开(公告)日：2017-02-07

申请号：US14344608

申请日：2012-09-13

Applicant: Min Jiang ,  Min Zhang ,  Jiangfeng Ma ,  Hao Wu ,  Liya Liang ,  Rongming Liu ,  Guangming Wang ,  Ping Wei

Inventor： Min Jiang ,  Min Zhang ,  Jiangfeng Ma ,  Hao Wu ,  Liya Liang ,  Rongming Liu ,  Guangming Wang ,  Ping Wei

IPC: C12P7/46 ,  C07C51/41 ,  C07C51/43 ,  C07C51/44

CPC classification number: C12P7/46 ,  C07C51/412 ,  C07C51/43 ,  C07C51/44 ,  C07C55/10

Abstract: This invention belongs to the field of biochemical engineering and relates to a method of cyclic utilization of water during separation of succinic acid made by fermentation. This invention uses water from separation process for aerobic growth of E. coli AFP111 and production of succinic acid by anaerobic fermentation, obtaining final succinic acid concentration of 55 g/L and yield of 91.6%. Compared with results of fermentation using culture medium prepared from tap water, succinic acid concentration and productivity increased by 8.5% and 8.46%, respectively. An outstanding advantage of this invention is recovery and utilization of evaporated water during separation of succinic acid, realizing cyclic use of water during industrial production of succinic acid, which is an environment-friendly process. Also, as evaporated water generated during separation of succinic acid contains small amount of organic acids such as acetic acid and formic acid, if this water is used for aerobic growth of thalli, the small amount of organic acids contained therein can be used as gluconeogenesis carbon source, improving activity of some key enzymes in cell and favoring succinic acid production by anaerobic fermentation of thalli.

Abstract translation: 本发明属于生物化学工程领域，涉及通过发酵制备的琥珀酸分离期间循环利用水的方法。 本发明利用分离过程中的水分进行大肠杆菌AFP111的有氧生长，通过厌氧发酵生产琥珀酸，得到最终琥珀酸浓度为55g / L，产率为91.6％。 与使用自来水制备的培养基的发酵结果相比，琥珀酸浓度和产率分别提高了8.5％和8.46％。 本发明的突出优点是分离琥珀酸期间蒸发水的回收利用，在工业生产琥珀酸期间循环使用水，这是一个环保的工艺。 另外，由于琥珀酸分离过程中产生的蒸发水含有少量的有机酸如乙酸和甲酸，所以如果这种水用于铊的有氧生长，其中所含的少量有机酸可用作糖异生碳 来源，改善细胞中一些关键酶的活性，并通过thalli的厌氧发酵有利于琥珀酸生产。

公开(公告)号：US20160171401A1

公开(公告)日：2016-06-16

申请号：US14567458

申请日：2014-12-11

Applicant: Hao Wu ,  Yu Cheng ,  Wen-Syan Li

Inventor： Hao Wu ,  Yu Cheng ,  Wen-Syan Li

IPC: G06Q10/06

CPC classification number: G06Q10/06312 ,  G06Q10/06315

Abstract: The present disclosure describes methods, systems, and computer program products for finding a best location scheme for a set of interactional objects in a constrained geographical area. A geographic region representing a wind farm is partitioned into a plurality of lattices. Initial chromosomes are generated, where a particular chromosome is a binary series used to represent the presence of a wind turbine in a layout of the plurality of lattices. A cost associated with each wind turbine associated with the initial chromosomes is evaluated. Parent chromosomes are selected for a genetic operation, and following the genetic operation, a cost associated with each wind turbine if evaluated. The parent chromosomes are updated using a fitness value.

Abstract translation: 本公开描述了用于在受限地理区域中为一组交互对象找到最佳位置方案的方法，系统和计算机程序产品。 代表风电场的地理区域被划分成多个格子。 产生初始染色体，其中特定染色体是用于表示多个晶格的布局中的风力涡轮机的存在的二进制序列。 评估与与初始染色体相关联的每个风力涡轮机相关联的成本。 选择亲本染色体用于遗传操作，并且在遗传操作之后，如果评估，则与每个风力涡轮机相关联的成本。 使用适应度值更新父染色体。

公开(公告)号：US09170462B2

公开(公告)日：2015-10-27

申请号：US13270866

申请日：2011-10-11

Applicant: Jian Guo ,  Weifeng Zhou ,  Xing Ming ,  Hao Wu

Inventor： Jian Guo ,  Weifeng Zhou ,  Xing Ming ,  Hao Wu

IPC: G02F1/1362

CPC classification number: G02F1/136259 ,  G02F2001/136263

Abstract: An array substrate comprises a first metal layer in which first signal lines are disposed; a second metal layer in which second signal lines are disposed; an insulation layer provided between the first and second metal layers. A repairing line is provided in edge regions of the second metal layer and insulated from the second signal lines, and the repairing line comprises a first longitudinal portion, a second longitudinal portion and a transverse portion, the first longitudinal portion is electrically connected to the second longitudinal portion by the transverse portion. A projection of the first longitudinal portion in a plane of the first metal layer intersects with one end of each of the first signal lines, and a projection of the second longitudinal portion in the plane of the first metal layer intersects with the other end of each of the first signal lines.

Abstract translation: 阵列基板包括其中设置有第一信号线的第一金属层; 设置第二信号线的第二金属层; 设置在第一和第二金属层之间的绝缘层。 修理线设置在第二金属层的边缘区域并与第二信号线绝缘，并且修理线包括第一纵向部分，第二纵向部分和横向部分，第一纵向部分电连接到第二纵向部分 纵向部分由横向部分。 第一纵向部分在第一金属层的平面中的突起与第一信号线的一端相交，并且第一纵向部分在第一金属层的平面中的突起与每个第一金属层的另一端相交 的第一条信号线。

公开(公告)号：US20150246902A1

公开(公告)日：2015-09-03

申请号：US14343462

申请日：2012-08-16

Applicant: Casey C. McComas ,  Nigel J. Liverton ,  Joerg Habermann ,  Uwe Koch ,  Frank Narjes ,  Peng Li ,  Xuanjia Peng ,  Richard Soll ,  Hao Wu ,  Anandan Palani ,  Xing Dai ,  Hong Liu ,  Shuwen He ,  Qun Dang

Inventor： Casey C. McComas ,  Nigel J. Liverton ,  Joerg Habermann ,  Uwe Koch ,  Frank Narjes ,  Peng Li ,  Xuanjia Peng ,  Richard Soll ,  Hao Wu ,  Anandan Palani ,  Xing Dai ,  Hong Liu ,  Shuwen He ,  Qun Dang

IPC: C07D405/04 ,  C07D473/00 ,  A61K31/52 ,  A61K45/06 ,  A61K31/437 ,  C07D487/04 ,  A61K31/4985 ,  A61K31/5025 ,  A61K31/4184 ,  C07D471/04

CPC classification number: C07D405/04 ,  A61K31/4045 ,  A61K31/416 ,  A61K31/4184 ,  A61K31/437 ,  A61K31/4375 ,  A61K31/4439 ,  A61K31/4985 ,  A61K31/5025 ,  A61K31/52 ,  A61K45/06 ,  C07D405/14 ,  C07D471/04 ,  C07D473/00 ,  C07D487/04 ,  C07D498/04 ,  Y02A50/387 ,  Y02A50/389 ,  Y02A50/395 ,  A61K2300/00

Abstract: The present invention relates to compounds of formula (I) that are useful as hepatitis C virus (HCV) NS5B polymerase inhibitors, the synthesis of such compounds, and the use of such compounds for inhibiting HCV NS5B polymerase activity, for treating or preventing HCV infections and for inhibiting HCV viral replication and/or viral production in a cell-based system.

Abstract translation: 本发明涉及可用作丙型肝炎病毒（HCV）NS5B聚合酶抑制剂，这种化合物的合成以及这些化合物用于抑制HCV NS5B聚合酶活性用于治疗或预防HCV感染的式（I）化合物 并用于在基于细胞的系统中抑制HCV病毒复制和/或病毒生产。