公开(公告)号：US11683994B2

公开(公告)日：2023-06-20

申请号：US17582190

申请日：2022-01-24

Applicant: Headway Technologies, Inc.

Inventor： Santiago Serrano Guisan ,  Luc Thomas ,  Jodi Mari Iwata ,  Guenole Jan ,  Ru-Ying Tong

IPC: H10N50/85 ,  H10N52/01 ,  H10N52/80 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L43/12

CPC classification number: H10N50/85 ,  G11C11/161 ,  H10N52/01 ,  H10N52/80

Abstract: A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/μm2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.

公开(公告)号：US20200152698A1

公开(公告)日：2020-05-14

申请号：US16184518

申请日：2018-11-08

Applicant: Headway Technologies, Inc.

Inventor： Huanlong Liu ,  Guenole Jan ,  Ru-Ying Tong ,  Jian Zhu ,  Yuan-Jen Lee ,  Jodi Mari Iwata ,  Sahil Patel ,  Vignesh Sundar

IPC: H01L27/22 ,  H01L43/12

Abstract: A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.

公开(公告)号：US20190140168A1

公开(公告)日：2019-05-09

申请号：US16221868

申请日：2018-12-17

Applicant: Headway Technologies, Inc.

Inventor： Jian Zhu ,  Guenole Jan ,  Yuan-Jen Lee ,  Huanlong Liu ,  Ru-Ying Tong ,  Jodi Mari Iwata ,  Vignesh Sundar ,  Luc Thomas ,  Yu-Jen Wang ,  Sahil Patel

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01F10/16 ,  H01F10/32 ,  H01F10/30 ,  G11C11/16 ,  H01F41/30

Abstract: A seed layer stack with a uniform top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a smoothing layer such as Mg where the latter has a resputtering rate 2 to 30× that of the amorphous layer. The uppermost seed (template) layer is NiW, NiMo, or one or more of NiCr, NiFeCr, and Hf while the bottommost seed layer is one or more of Ta, TaN, Zr, ZrN, Nb, NbN, Mo, MoN, TiN, W, WN, and Ru. Accordingly, perpendicular magnetic anisotropy in an overlying magnetic layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited.

公开(公告)号：US20190109277A1

公开(公告)日：2019-04-11

申请号：US15728818

申请日：2017-10-10

Applicant: Headway Technologies, Inc.

Inventor： Guenole Jan ,  Jodi Mari Iwata ,  Ru-Ying Tong ,  Huanlong Liu ,  Yuan-Jen Lee ,  Jian Zhu

IPC: H01L43/08

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a metal oxide (Mox) layer and a tunnel barrier layer to produce interfacial perpendicular magnetic anisotropy (PMA). The Mox layer has a non-stoichiometric oxidation state to minimize parasitic resistance, and comprises a dopant to fill vacant lattice sites thereby blocking oxygen diffusion through the Mox layer to preserve interfacial PMA and high thermal stability at process temperatures up to 400° C. Various methods of forming the doped Mox layer include deposition of the M layer in a reactive environment of O2 and dopant species in gas form, exposing a metal oxide layer to dopant species in gas form, and ion implanting the dopant. In another embodiment, where the dopant is N, a metal nitride layer is formed on a metal oxide layer, and then an anneal step drives nitrogen into vacant sites in the metal oxide lattice.

公开(公告)号：US20180005746A1

公开(公告)日：2018-01-04

申请号：US15196807

申请日：2016-06-29

Applicant: Headway Technologies, Inc.

Inventor： Luc Thomas ,  Guenole Jan ,  Ru-Ying Tong

IPC: H01F10/12 ,  G03F7/16 ,  B24B37/20

Abstract: An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. The use of non-magnetic layers each with a thickness of 0.5 to 10 Angstroms and with a high resputtering rate provides a smoother FML top surface, inhibits crystallization of the FML sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. The FML can function as a free or reference layer in an MTJ. In an alternative embodiment, the non-magnetic material such as Mg, Al, Si, Ca, Sr, Ba, and B is embedded by co-deposition or doped in the FML layer.

公开(公告)号：US20170117456A1

公开(公告)日：2017-04-27

申请号：US15344618

申请日：2016-11-07

Applicant: Headway Technologies, Inc.

Inventor： Guenole Jan ,  Ru-Ying Tong

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  H01F10/30

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01F10/123 ,  H01F10/30 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/222 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof is inserted between the seed layer and magnetic layer. In some embodiments, a first composite seed layer/NiCr stack is formed below the reference layer, and a second composite seed layer/NiCr stack is formed between the free layer and a dipole layer. The magnetic element has thermal stability to at least 400° C.

公开(公告)号：US08987848B2

公开(公告)日：2015-03-24

申请号：US14244940

申请日：2014-04-04

Applicant: Headway Technologies, Inc.

Inventor： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L29/82 ,  H01L43/00 ,  H01L29/34 ,  H01L29/74 ,  H01L31/111 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01F10/30 ,  H01F10/32 ,  H01L29/66 ,  H01F41/30

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A MTJ for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种作为畴壁运动装置的自旋电子装置的MTJ，并且包括薄层种子层，其在具有（Co / X）n或（CoX）n组成的上覆层压层中增强垂直磁各向异性（PMA），其中n 为2〜30，X为V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX为无序合金。 种子层优选为NiCr，NiFeCr，Hf或其复合物，厚度为10至100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US08981505B2

公开(公告)日：2015-03-17

申请号：US13739016

申请日：2013-01-11

Applicant: Headway Technologies, Inc.

Inventor： Takahiro Moriyama ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01L21/8246 ,  H01L43/02 ,  H01L43/12 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

Abstract: A MTJ is disclosed with a discontinuous Mg or Mg alloy layer having a thickness from 1 to 3 Angstroms between a free layer and a capping layer in a bottom spin valve configuration. It is believed the discontinuous Mg layer serves to block conductive material in the capping layer from diffusing through the free layer and into the tunnel barrier layer thereby preventing the formation of conductive channels that function as electrical shunts within the insulation matrix of the tunnel barrier. As a result, the “low tail” percentage in a plot of magnetoresistive ratio vs Rp is minimized which means the number of high performance MTJ elements in a MTJ array is significantly increased, especially when a high temperature anneal is included in the MTJ fabrication process. The discontinuous layer is formed by a low power physical vapor deposition process.

Abstract translation: 公开了一种MTJ，其具有在底部自旋阀结构中的自由层和覆盖层之间具有1至3埃厚度的不连续Mg或Mg合金层。 认为不连续的Mg层用于阻挡覆盖层中的导电材料扩散通过自由层并进入隧道势垒层，从而防止在隧道势垒的绝缘矩阵内用作电分流的导电通道的形成。 结果，磁阻比与Rp的关系中的“低尾”百分比最小化，这意味着MTJ阵列中的高性能MTJ元件的数量显着增加，特别是当在MTJ制造工艺中包括高温退火 。 不连续层通过低功率物理气相沉积工艺形成。

公开(公告)号：US20140145792A1

公开(公告)日：2014-05-29

申请号：US13686169

申请日：2012-11-27

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Yu-Jen Wang ,  Guenole Jan ,  Ru-Ying Tong

IPC: H03B15/00 ,  G11B5/84 ,  G11B5/66

CPC classification number: G11C11/161 ,  B82Y40/00 ,  G01R33/00 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/65 ,  G11B5/66 ,  G11B2005/0024 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006

Abstract: Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to at least 400° C. The SAF and SyF structures have a FL1/DL1/spacer/DL2/FL2 configuration wherein FL1 and FL2 are free layers with PMA, the coupling layer induces antiferromagnetic or ferrimagnetic coupling between FL1 and FL2 depending on thickness, and DL1 and DL2 are dusting layers that enhance the coupling between FL1 and FL2. The SAF free layer may be used with a SAF reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Furthermore, a dual SAF structure is described that may provide further advantages in terms of Ho, PMA, and thermal stability.

Abstract translation: 公开了合成反铁磁（SAF）和合成亚铁磁（SyF）自由层结构，其减少Ho（对于SAF自由层），​​增加垂直磁各向异性（PMA），并提供高达至少400℃的更高的热稳定性。SAF 并且SyF结构具有FL1 / DL1 / spacer / DL2 / FL2配置，其中FL1和FL2是具有PMA的自由层，耦合层根据厚度在FL1和FL2之间引起反铁磁或亚铁磁耦合，并且DL1和DL2是增强的粉尘层 FL1和FL2之间的耦合。 SAF自由层可以与STT-MRAM存储元件中的SAF参考层或包括自旋转移振荡器的自旋电子器件一起使用。 此外，描述了可以在Ho，PMA和热稳定性方面提供进一步优点的双重SAF结构。

公开(公告)号：US11289645B2

公开(公告)日：2022-03-29

申请号：US16236705

申请日：2018-12-31

Applicant: Headway Technologies, Inc.

Inventor： Yi Yang ,  Vignesh Sundar ,  Dongna Shen ,  Sahil Patel ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02

Abstract: A complementary metal oxide semiconductor (CMOS) device comprises a first metal line, a first metal via on the first metal line, a magnetic tunneling junction (MTJ) device on the first metal via wherein the first metal via acts as a bottom electrode for the MTJ device, a second metal via on the MTJ device, and a second metal line on the second metal via.