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    Fully compensated synthetic ferromagnet for spintronics applications
    2.
    发明授权
    Fully compensated synthetic ferromagnet for spintronics applications 有权

    公开(公告)号：US10522747B2

    公开(公告)日：2019-12-31

    申请号：US16278766

    申请日：2019-02-19

    Applicant: Headway Technologies, Inc.

    Inventor： Jian Zhu ,  Guenole Jan ,  Yuan-Jen Lee ,  Huanlong Liu ,  Ru-Ying Tong ,  Po-Kang Wang

    IPC: H01L43/08 ,  H01F10/30 ,  H01F10/32 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01F10/16

    Abstract: A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

    Fully Compensated Synthetic Ferromagnet for Spintronics Applications
    3.
    发明申请
    Fully Compensated Synthetic Ferromagnet for Spintronics Applications 审中-公开

    公开(公告)号：US20190189911A1

    公开(公告)日：2019-06-20

    申请号：US16278766

    申请日：2019-02-19

    Applicant: Headway Technologies, Inc.

    Inventor： Jian Zhu ,  Guenole Jan ,  Yuan-Jen Lee ,  Huanlong Liu ,  Ru-Ying Tong ,  Po-Kang Wang

    IPC: H01L43/08 ,  H01F10/32 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01F10/30 ,  H01F10/16

    Abstract: A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

    Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications
    6.
    发明申请
    Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications 审中-公开
    磁阻器阻抗X面积（RA）产品的减小和垂直磁各向异性（PMA）的保护

    公开(公告)号：US20150333254A1

    公开(公告)日：2015-11-19

    申请号：US14278243

    申请日：2014-05-15

    Applicant: Headway Technologies, Inc.

    Inventor： Huanlong Liu ,  Jian Zhu ,  Keyu Pi ,  Ru-Ying Tong

    IPC: H01L43/12

    CPC classification number: H01L43/12 ,  G01R33/096 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/161 ,  H01F41/307 ,  H01L43/08

    Abstract: A method of forming a MTJ with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistance x area value is disclosed. The method preserves perpendicular magnetic anisotropy in bottom and top magnetic layers that adjoin bottom and top surfaces of the tunnel barrier. A key feature is a passive oxidation step of a first Mg layer that is deposited on the bottom magnetic layer wherein a maximum oxygen pressure is 10−5 torr. A bottom portion of the first Mg layer remains unoxidized thereby protecting the bottom magnetic layer from substantial oxidation during subsequent oxidation and anneal processes that are employed to complete the fabrication of the tunnel barrier and MTJ. An uppermost Mg layer may be formed as the top layer in the tunnel barrier stack before a top magnetic layer is deposited.

    Abstract translation: 公开了一种用具有高隧道磁阻比的隧道势垒形成MTJ和低电阻x面积值的方法。 该方法保持邻接隧道屏障的底部和顶部表面的底部和顶部磁性层中的垂直磁各向异性。 关键特征是沉积在底部磁性层上的第一Mg层的无源氧化步骤，其中最大氧气压力为10 -5乇。 第一Mg层的底部保持未氧化，从而在用于完成隧道势垒和MTJ的制造的随后氧化和退火过程中保护底部磁性层免受实质氧化。 在顶层磁性层沉积之前，可以在隧道势垒堆叠中形成最上层的Mg层作为顶层。

    Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications
    7.
    发明申请
    Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications 有权
    磁性器件应用高温退火后磁场隧道结低缺陷率

    公开(公告)号：US20170025602A1

    公开(公告)日：2017-01-26

    申请号：US14803111

    申请日：2015-07-20

    Applicant: Headway Technologies, Inc.

    Inventor： Huanlong Liu ,  Yuan-Jen Lee ,  Jian Zhu ,  Guenole Jan ,  Po-Kang Wang

    IPC: H01L43/10 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron content from 1 to 20 atomic %. One of the first and second layers in each of the free layer and reference layer contacts the tunnel barrier. Each boron containing layer has a thickness of 1 to 10 Angstroms and may include one or more B layers and one or more Co, Fe, CoFe, or CoFeB layers. As a result, migration of non-magnetic metals along crystalline boundaries to the tunnel barrier is prevented, and the MTJ has a low defect count of around 10 ppm while maintaining an acceptable TMR ratio following annealing to temperatures of about 400° C. The boron containing layers are selected from CoB, FeB, CoFeB and alloys thereof including CoFeNiB.

    Abstract translation: 公开了一种磁性隧道结，其中参考层和自由层各自包含具有25至50原子％的硼含量的一个层和具有1至20原子％的硼含量的相邻的第二层。 每个自由层和参考层中的第一层和第二层之一与隧道屏障接触。 每个含硼层具有1至10埃的厚度，并且可以包括一个或多个B层和一种或多种Co，Fe，CoFe或CoFeB层。 结果，防止非晶磁性金属沿结晶界面迁移到隧道势垒，并且MTJ具有约10ppm的低缺陷计数，同时在退火至约400℃之后保持可接受的TMR比。硼 选自CoB，FeB，CoFeB及其合金，包括CoFeNiB。

    Initialization Process for Magnetic Random Access Memory (MRAM) Production
    9.
    发明申请
    Initialization Process for Magnetic Random Access Memory (MRAM) Production 审中-公开

    公开(公告)号：US20190156876A1

    公开(公告)日：2019-05-23

    申请号：US15818148

    申请日：2017-11-20

    Applicant: Headway Technologies, Inc.

    Inventor： Yuan-Jen Lee ,  Guenole Jan ,  Huanlong Liu ,  Jian Zhu

    IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

    Abstract: An initialization process is disclosed for a perpendicular magnetic tunnel junction (p-MTJ) wherein the switching error rate is reduced from a typical range of 30-100 ppm to less than 10 ppm. In one embodiment, an in-plane magnetic field is applied after a final anneal step is performed during memory device fabrication such that all magnetizations in the free layer, and AP1 and AP2 pinned layers are temporarily aligned “in-plane”. After the applied field is removed, interfacial perpendicular magnetic anisotropy (PMA) at a tunnel barrier/AP1 interface induces a single AP1 magnetic domain with a magnetization in a first vertical direction. Interfacial PMA at a FL/tunnel barrier interface affords a single FL domain with magnetization in the first direction or opposite thereto. AP2 magnetization is opposite to the first direction as a result of antiferromagnetic coupling with the AP1 layer. Alternatively, a perpendicular-to-plane magnetic field may be applied for initialization.

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