公开(公告)号：US20210175414A1

公开(公告)日：2021-06-10

申请号：US17182536

申请日：2021-02-23

申请人： Headway Technologies, Inc.

发明人： Santiago Serrano Guisan ,  Luc Thomas ,  Jodi Mari Iwata ,  Guenole Jan ,  Vignesh Sundar

IPC分类号： H01L43/02 ,  H01F10/32 ,  H01L43/10 ,  H01F41/34 ,  H01L43/12

摘要： A magnetic tunnel junction (MTJ) is disclosed wherein a nitride diffusion barrier (NDB) has a L2/L1/NL or NL/L1/L2 configuration wherein NL is a metal nitride or metal oxynitride layer, L2 blocks oxygen diffusion from an adjoining Hk enhancing layer, and L1 prevents nitrogen diffusion from NL to the free layer (FL) thereby enhancing magnetoresistive ratio and FL thermal stability, and minimizing resistance x area product for the MTJ. NL is the uppermost layer in a bottom spin valve configuration, or is formed on a seed layer in a top spin valve configuration such that L2 and L1 are always between NL and the FL or pinned layer, respectively. In other embodiments, one or both of L1 and L2 are partially oxidized. Moreover, either L2 or L1 may be omitted when the other of L1 and L2 is partially oxidized. A spacer between the FL and L2 is optional.

公开(公告)号：US10784310B2

公开(公告)日：2020-09-22

申请号：US16184518

申请日：2018-11-08

申请人： Headway Technologies, Inc.

发明人： Huanlong Liu ,  Guenole Jan ,  Ru-Ying Tong ,  Jian Zhu ,  Yuan-Jen Lee ,  Jodi Mari Iwata ,  Sahil Patel ,  Vignesh Sundar

IPC分类号： H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.

公开(公告)号：US10522747B2

公开(公告)日：2019-12-31

申请号：US16278766

申请日：2019-02-19

申请人： Headway Technologies, Inc.

发明人： Jian Zhu ,  Guenole Jan ,  Yuan-Jen Lee ,  Huanlong Liu ,  Ru-Ying Tong ,  Po-Kang Wang

IPC分类号： H01L43/08 ,  H01F10/30 ,  H01F10/32 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01F10/16

摘要： A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

公开(公告)号：US20190189911A1

公开(公告)日：2019-06-20

申请号：US16278766

申请日：2019-02-19

申请人： Headway Technologies, Inc.

发明人： Jian Zhu ,  Guenole Jan ,  Yuan-Jen Lee ,  Huanlong Liu ,  Ru-Ying Tong ,  Po-Kang Wang

IPC分类号： H01L43/08 ,  H01F10/32 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01F10/30 ,  H01F10/16

摘要： A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

公开(公告)号：US20190088866A1

公开(公告)日：2019-03-21

申请号：US16173201

申请日：2018-10-29

申请人： Headway Technologies, Inc.

发明人： Jian Zhu ,  Guenole Jan ,  Yuan-Jen Lee ,  Huanlong Liu ,  Ru-Ying Tong ,  Jodi Mari Iwata ,  Vignesh Sundar ,  Luc Thomas ,  Yu-Jen Wang ,  Sahil Patel

IPC分类号： H01L43/12 ,  H01F10/30 ,  H01F41/30 ,  H01F10/32 ,  H01L43/10 ,  H01F10/16 ,  H01L43/08 ,  G11C11/16

摘要： A seed layer stack with a uniform top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a smoothing layer such as Mg where the latter has a resputtering rate 2 to 30× that of the amorphous layer. The seed layer stack may be repeated to give a laminate of two amorphous layers and two smoothing layers, and is advantageous for enhancing performance in magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. A template layer such as NiCr may be formed on the uppermost smoothing layer to promote and maintain perpendicular magnetic anisotropy in an overlying magnetic layer during high temperature processing up to 400° C. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited.

公开(公告)号：US20180269387A1

公开(公告)日：2018-09-20

申请号：US15972284

申请日：2018-05-07

申请人： Headway Technologies, Inc.

发明人： Jodi Mari Iwata ,  Guenole Jan ,  Ru-Ying Tong ,  Po-Kang Wang

IPC分类号： H01L43/10 ,  H01F41/32 ,  H01F10/32 ,  H01F10/16 ,  H01L43/12 ,  H01L43/08 ,  H01F10/14

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01F10/142 ,  H01F10/16 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, a continuous or discontinuous metal (M) or MQ alloy layer within the FL reacts with scavenged oxygen to form a partially oxidized metal or alloy layer that enhances PMA and maintains acceptable RA. M is one of Mg, Al, B, Ca, Ba, Sr, Ta, Si, Mn, Ti, Zr, or Hf, and Q is a transition metal, B, C, or Al. Methods are also provided for forming composite free layers where interfacial perpendicular anisotropy is generated therein by contact of the free layer with oxidized materials.

公开(公告)号：US20180267128A1

公开(公告)日：2018-09-20

申请号：US15463074

申请日：2017-03-20

申请人： Headway Technologies, Inc.

发明人： Santiago Serrano Guisan ,  Luc Thomas ,  Son Le ,  Guenole Jan

IPC分类号： G01R33/60 ,  G01R33/345

CPC分类号： G01R33/60 ,  G01N24/10 ,  G01R31/318511 ,  G01R33/30 ,  G01R33/345 ,  H01L43/08 ,  H01L43/10 ,  H01P5/18

摘要： A ferromagnetic resonance (FMR) measurement system is disclosed with a waveguide transmission line (WGTL) connected at both ends to a mounting plate having an opening through which the WGTL is suspended. While the WGTL bottom surface contacts a portion of magnetic film on a whole wafer, a plurality of microwave frequencies is sequentially transmitted through the WGTL. Simultaneously, a magnetic field is applied to the contacted region thereby causing a FMR condition in the magnetic film. After RF output is transmitted through or reflected from the WGTL to a RF detector and converted to a voltage signal, effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening are determined based on magnetic field intensity, microwave frequency and voltage output. A plurality of measurements is performed by controllably moving the WGTL or wafer and repeating the simultaneous application of microwave frequencies and magnetic field at additional preprogrammed locations on the magnetic film.

公开(公告)号：US09966529B1

公开(公告)日：2018-05-08

申请号：US15461779

申请日：2017-03-17

申请人： Headway Technologies, Inc.

发明人： Jodi Mari Iwata ,  Guenole Jan ,  Ru-Ying Tong ,  Po-Kang Wang

IPC分类号： H01L29/82 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01F41/32

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, metal clusters are formed in the FL and are subsequently partially or fully oxidized by scavenging oxygen to generate additional FL/oxide interfaces that enhance PMA, provide an acceptable resistance x area (RA) value, and preserve the magnetoresistive ratio. In other embodiments, a continuous or discontinuous metal (M) or MQ alloy layer within the FL reacts with scavenged oxygen to form a partially oxidized metal or alloy layer that enhances PMA and maintains acceptable RA. M is one of Mg, Al, B, Ca, Ba, Sr, Ta, Si, Mn, Ti, Zr, or Hf, and Q is a transition metal, B, C, or Al.

公开(公告)号：US09842988B2

公开(公告)日：2017-12-12

申请号：US14803111

申请日：2015-07-20

申请人： Headway Technologies, Inc.

发明人： Huanlong Liu ,  Yuan-Jen Lee ,  Jian Zhu ,  Guenole Jan ,  Po-Kang Wang

IPC分类号： H01L29/82 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01F41/30 ,  H01F10/32

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron content from 1 to 20 atomic %. One of the first and second layers in each of the free layer and reference layer contacts the tunnel barrier. Each boron containing layer has a thickness of 1 to 10 Angstroms and may include one or more B layers and one or more Co, Fe, CoFe, or CoFeB layers. As a result, migration of non-magnetic metals along crystalline boundaries to the tunnel barrier is prevented, and the MTJ has a low defect count of around 10 ppm while maintaining an acceptable TMR ratio following annealing to temperatures of about 400° C. The boron containing layers are selected from CoB, FeB, CoFeB and alloys thereof including CoFeNiB.

公开(公告)号：US09472752B2

公开(公告)日：2016-10-18

申请号：US14493416

申请日：2014-09-23

申请人： Headway Technologies, Inc.

发明人： Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

IPC分类号： H01L43/12 ,  G11B5/66 ,  G11C11/15 ,  H01F10/32 ,  G11B5/84 ,  G11B5/39 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  G01R33/09 ,  H01F41/30 ,  H01L43/02 ,  H01F10/12

CPC分类号： H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

摘要： Enhanced Hc and Hk in addition to higher thermal stability up to at least 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell for STT-MRAM designs.

摘要翻译： 通过在合成反铁磁（SAF）结构中在隔离物的顶表面和底表面上添加除尘层，可以在磁性器件中实现增强的Hc和Hk以及至多400℃的更高的热稳定性，从而得到RL1 / DL1 / 间隔/ DL2 / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 在室温至400℃下沉积除尘层。RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压材料。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并且增加用于STT-MRAM设计的存储器单元的保留时间。