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公开(公告)号：US08914970B2
公开(公告)日：2014-12-23
申请号：US13869005
申请日：2013-04-23
Applicant: HGST Netherlands B.V.
Inventor： Jordan Asher Katine
CPC classification number: G11B5/3932 , G11B5/3163 , G11B5/3909 , G11B5/398 , G11B5/8404 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1114
Abstract: A tunneling magnetoresistive sensor has an extended pinned layer wherein both the MgO spacer layer and the underlying ferromagnetic pinned layer extend beyond the back edge of the ferromagnetic free layer in the stripe height direction and optionally also beyond the side edges of the free layer in the trackwidth direction. A patterned photoresist layer with a back edge is formed on the sensor stack and a methanol (CH3OH)-based reactive ion etching (RIE) removes the unprotected free layer, defining the free layer back edge. The methanol-based RIE terminates at the MgO spacer layer without damaging the underlying reference layer. A second patterned photoresist layer may be deposited and a second methanol-based RIE may be performed if it is desired to have the reference layer also extend beyond the side edges of the free layer in the trackwidth direction.
Abstract translation: 隧道磁阻传感器具有延伸的钉扎层，其中MgO间隔层和下面的铁磁性钉扎层都延伸超过铁磁自由层在条带高度方向上的后边缘，并且可选地还可以超过轨道宽度中的自由层的侧边缘 方向。 在传感器堆叠上形成具有后边缘的图案化光致抗蚀剂层，并且基于甲醇（CH 3 OH）的反应离子蚀刻（RIE）去除限定自由层后边缘的未保护的自由层。 基于甲醇的RIE终止于MgO间隔层，而不损坏下面的参考层。 可以沉积第二图案化的光致抗蚀剂层，并且如果希望参考层也延伸超过自由层的沿着带宽方向的侧边缘，则可以执行第二基于甲醇的RIE。
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公开(公告)号：US20170062519A1
公开(公告)日：2017-03-02
申请号：US14835021
申请日：2015-08-25
Applicant: HGST Netherlands B.V.
Inventor： Zvonimir Z. Bandic , Jeffery Robinson Childress , Luiz M. Franca-Neto , Jordan Asher Katine , Neil Leslie Robertson
CPC classification number: H01L27/222 , G11C11/161 , H01L25/18 , H01L25/50 , H01L43/02 , H01L43/08 , H01L43/12 , H01L2924/1434
Abstract: A magnetic memory integrated with complementary metal oxide semiconductor (CMOS) driving circuits and a method for implementing magnetic memory integrated with complementary metal oxide semiconductor (CMOS) driving circuits for use in Solid-State Drives (SSDs) are provided. A complementary metal oxide semiconductor (CMOS) wafer is provided, and a magnetic memory is formed on top of the CMOS wafer providing a functioning magnetic memory chip.
Abstract translation: 与互补金属氧化物半导体（CMOS）驱动电路集成的磁存储器和用于实现与用于固态驱动器（SSD）的互补金属氧化物半导体（CMOS）驱动电路集成的磁存储器的方法）。 提供互补金属氧化物半导体（CMOS）晶片，并且在提供功能磁性存储器芯片的CMOS晶片的顶部上形成磁存储器。
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公开(公告)号：US20170062034A1
公开(公告)日：2017-03-02
申请号：US14834743
申请日：2015-08-25
Applicant: HGST Netherlands B.V.
Inventor： Zvonimir Z. Bandic , Jeffery Robinson Childress , Luiz M. Franca-Neto , Jordan Asher Katine , Neil Leslie Robertson
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1653 , G11C11/1657 , G11C11/1673 , H01L27/228 , H01L43/08
Abstract: A magnetic memory cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell includes a first conductor M1, and a second conductor M2 and a programmable area using unpatterned programmable magnetic media. At least one of the conductors M1, M2 is formed of a magnetic material, and the conductor M2 is more conductive than conductor M1. Steering of current is provided for programming the magnetic memory cell.
Abstract translation: 提供了一种磁存储单元和用于实现在固态硬盘（SSD）中使用的磁存储单元的方法。 磁存储单元包括第一导体M1和第二导体M2以及使用非图案化可编程磁性介质的可编程区域。 导体M1，M2中的至少一个由磁性材料形成，并且导体M2比导体M1更具导电性。 提供电流转向用于对磁存储单元进行编程。
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公开(公告)号：US09218831B1
公开(公告)日：2015-12-22
申请号：US14489299
申请日：2014-09-17
Applicant: HGST Netherlands B.V.
IPC: G11B5/39
CPC classification number: G11B5/3958 , G11B5/3163 , G11B5/3945 , G11B5/397 , G11B5/4886
Abstract: A side-by-side magnetic multi-input multi-output (MIMO) read head is provided. The read head may include a pair of side-by-side MIMO read sensors disposed between a bottom shield, a top shield and between a pair of side shields. The read head may also include a pair of electrical leads, each of which is coupled with one of the MIMO read sensors. The electrical leads extend away from an air bearing surface.
Abstract translation: 提供并行磁性多输入多输出（MIMO）读取头。 读取头可以包括一对并排MIMO读取传感器，其设置在底部屏蔽，顶部屏蔽之间和一对侧面屏蔽之间。 读取头还可以包括一对电引线，每一个电引线与MIMO读取传感器之一耦合。 电气引线远离空气轴承表面延伸。
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公开(公告)号：US20140313617A1
公开(公告)日：2014-10-23
申请号：US13869005
申请日：2013-04-23
Applicant: HGST NETHERLANDS B.V.
Inventor： Jordan Asher Katine
CPC classification number: G11B5/3932 , G11B5/3163 , G11B5/3909 , G11B5/398 , G11B5/8404 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1114
Abstract: A tunneling magnetoresistive sensor has an extended pinned layer wherein both the MgO spacer layer and the underlying ferromagnetic pinned layer extend beyond the back edge of the ferromagnetic free layer in the stripe height direction and optionally also beyond the side edges of the free layer in the trackwidth direction. A patterned photoresist layer with a back edge is formed on the sensor stack and a methanol (CH3OH)-based reactive ion etching (RIE) removes the unprotected free layer, defining the free layer back edge. The methanol-based RIE terminates at the MgO spacer layer without damaging the underlying reference layer. A second patterned photoresist layer may be deposited and a second methanol-based RIE may be performed if it is desired to have the reference layer also extend beyond the side edges of the free layer in the trackwidth direction.
Abstract translation: 隧道磁阻传感器具有延伸的钉扎层，其中MgO间隔层和下面的铁磁性钉扎层都延伸超过铁磁自由层在条带高度方向上的后边缘，并且可选地还可以超过轨道宽度中的自由层的侧边缘 方向。 在传感器堆叠上形成具有后边缘的图案化光致抗蚀剂层，并且基于甲醇（CH 3 OH）的反应离子蚀刻（RIE）去除限定自由层后边缘的未保护的自由层。 基于甲醇的RIE终止于MgO间隔层，而不损坏下面的参考层。 可以沉积第二图案化的光致抗蚀剂层，并且如果希望参考层也延伸超过自由层的沿着带宽方向的侧边缘，则可以执行第二基于甲醇的RIE。
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Patent Agency Ranking
公开(公告)号：US09520444B1
公开(公告)日：2016-12-13
申请号：US14834856
申请日：2015-08-25
Applicant: HGST Netherlands B.V.
Inventor： Zvonimir Z. Bandic , Jeffery Robinson Childress , Luiz M. Franca-Neto , Jordan Asher Katine , Neil Leslie Robertson
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/02 , H01L43/12
Abstract: A magnetic memory pillar cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell includes a first conductor M1, and a second conductor M2, the second conductor M1 surrounded by the first conductor M1 and a programmable area using unpatterned programmable magnetic media. At least one of the conductors M1, M2 is formed of a magnetic material, and the conductor M2 is more conductive than conductor M1. An oxide barrier extends between the first conductor M1 and a programmable input to the magnetic memory pillar cell; and the oxide barrier is unpatterned.
Abstract translation: 提供了一种用于固态硬盘（SSD）中使用的磁记忆体单元和用于实现磁存储单元的方法。 磁存储单元包括第一导体M1和第二导体M2，由第一导体M1包围的第二导体M1和使用未图案化的可编程磁性介质的可编程区域。 导体M1，M2中的至少一个由磁性材料形成，并且导体M2比导体M1更具导电性。 氧化物屏障在第一导体M1和与磁性存储器柱单元的可编程输入之间延伸; 并且氧化物屏障是未图案化的。
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7.发明授权Implementing 3D scalable magnetic memory with interlayer dielectric stack and pillar holes having programmable area 有权实现具有层间电介质堆叠和具有可编程区域的柱孔的3D可缩放磁存储器公开(公告)号：US09443905B1
公开(公告)日：2016-09-13
申请号：US14834929
申请日：2015-08-25
Applicant: HGST Netherlands B.V.
Inventor： Zvonimir Z. Bandic , Jeffery Robinson Childress , Luiz M. Franca-Neto , Jordan Asher Katine , Neil Leslie Robertson
IPC: G11C11/00 , H01L27/22 , H01L43/12 , G11C16/04 , G11C16/10 , H01L43/02 , H01L43/08 , H01L21/28 , G11C11/16
CPC classification number: H01L27/222 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L21/28026 , H01L43/08 , H01L43/12
Abstract: A three-dimensional (3D) scalable magnetic memory array and a method for implementing the three-dimensional (3D) scalable magnetic memory array for use in Solid-State Drives (SSDs) are provided. A three-dimensional (3D) scalable magnetic memory array includes an interlayer dielectric (IDL) stack of word planes separated by a respective IDL. A plurality of pillar holes is formed in the IDL stack in a single etch step; each of the pillar holes including an oxide barrier coating, and a first conductor M1, and a second conductor M2 forming magnetic pillar memory cells. The first conductor M1 is formed of a magnetic material, and the second conductor M2 is more electrically conductive than the conductor M1; and each of the magnetic pillar memory cell inside the pillar holes have a programmable area using unpatterned programmable magnetic media proximate to a respective one of the word planes.
Abstract translation: 提供了三维（3D）可扩展磁存储器阵列和用于实现在固态硬盘（SSD）中使用的三维（3D）可扩展磁存储器阵列的方法。 三维（3D）可扩展磁存储器阵列包括由相应的IDL分开的字平面层间电介质（IDL）堆叠。 在单个蚀刻步骤中，在IDL叠层中形成多个柱孔; 每个柱孔包括氧化物阻挡涂层和第一导体M1，以及形成磁柱存储单元的第二导体M2。 第一导体M1由磁性材料形成，第二导体M2比导体M1更具导电性; 并且柱孔内的每个磁柱存储单元具有使用靠近相应的一个字平面的未图案化的可编程磁性介质的可编程区域。
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8.发明授权Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and improved center shield 有权具有多个堆叠传感器和改进的中心屏蔽的电流垂直平面（CPP）磁阻（MR）传感器结构公开(公告)号：US09042059B1
公开(公告)日：2015-05-26
申请号：US14277978
申请日：2014-05-15
Applicant: HGST Netherlands B.V.
Inventor： Jordan Asher Katine , Stefan Maat , Neil Smith , Alexander M. Zeltser , Howard Gordon Zolla
CPC classification number: G11B5/397 , G11B5/115 , G11B5/3909 , G11B5/3912 , G11B5/3954 , G11B2005/3996
Abstract: A two-dimensional magnetic recording (TDMR) read head has upper and lower read sensors wherein the lower read sensor has its magnetization biased by side shields of soft magnetic material. The center shield between the lower and upper sensors may be an antiparallel structure (APS) with two ferromagnetic layers separated by an antiparallel coupling (APC) layer. The center shield has a central region and two side regions, but there is no antiferromagnetic (AF) layer in the central region. Instead the two side regions of the upper ferromagnetic layer in the APS are pinned by AF tab layers that are electrically isolated from the upper sensor. The upper ferromagnetic layer and the APC layer in the APS may also be located only in the side regions. The thickness of the center shield can thus be made thinner, which reduces the free layer to free layer spacing.
Abstract translation: 二维磁记录（TDMR）读头具有上和下读传感器，其中下读传感器具有由软磁材料的侧屏偏压的磁化。 下传感器和上传感器之间的中心屏蔽可能是具有由反平行耦合（APC）层隔开的两个铁磁层的反并联结构（APS）。 中心屏蔽具有中心区域和两个侧面区域，但在中心区域中没有反铁磁（AF）层。 相反，APS中的上铁磁层的两侧区域被与上传感器电隔离的AF贴片层固定。 APS中的上铁磁层和APC层也可以仅位于侧区域中。 因此，中心屏蔽层的厚度可以变得更薄，这将自由层减小到自由层间距。
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9.发明申请CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH REDUCED-WIDTH TOP AND BOTTOM ELECTRODES AND METHOD FOR MAKING 有权具有减少顶部和底部电极的电流 - 平面（CPP）磁传感器及其制造方法公开(公告)号：US20140340791A1
公开(公告)日：2014-11-20
申请号：US13895411
申请日：2013-05-16
Applicant: HGST Netherlands B.V.
Inventor： Patrick Mesquita Braganca , Jeffrey R. Childress , Jordan Asher Katine , Yang Li , Neil Leslie Robertson , Neil Smith , Petrus Antonius VanDerHeijden , Douglas Johnson Werner
IPC: G11B5/39
CPC classification number: G11B5/3163 , G11B5/398
Abstract: A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth.
Abstract translation: 电流垂直于平面磁阻传感器具有比传感器轨道宽度窄的顶部和底部电极。 电极由Cu，Au，Ag和AgSn之一形成，其离子研磨蚀刻速率远高于传感器铁磁材料的蚀刻速率。 离子铣削相对于与电极层的平面垂直的线和传感器堆叠中的层以高角度执行。 由于顶部和底部电极层的材料的蚀刻速率高得多，所以电极层将具有从自由层的侧边缘凹进的侧边缘。 这减小了顶部和底部电极的表面积，这导致通过传感器的自由层的感测电流被限制在较窄的通道中，这相当于具有较窄物理轨道宽度的传感器。
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10.发明申请METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH REDUCED-WIDTH SELF-ALIGNED TOP ELECTRODE 有权用于制造具有减少宽度自对准顶电极的电流 - 平面（CPP）磁传感器（MR）传感器的方法公开(公告)号：US20140291283A1
公开(公告)日：2014-10-02
申请号：US13853411
申请日：2013-03-29
Applicant: HGST NETHERLANDS B.V.
Inventor： Patrick Mesquita Braganca , Jeffrey R. Childress , Jordan Asher Katine , Yang Li , Neil Leslie Robertson , Neil Smith , Petrus Antonius VanDerHeijden , Douglas Johnson Werner
IPC: G11B5/39
CPC classification number: G11B5/398 , G11B5/3163 , Y10T29/49032
Abstract: A method for making a current-perpendicular-to-the-plane magnetoresistive sensor structure produces a top electrode that is “self-aligned” on the top of the sensor and with a width less than the sensor trackwidth. A pair of walls of ion-milling resistant material are fabricated to a predetermined height above the biasing layers at the sensor side edges. A layer of electrode material is then deposited onto the top of the sensor between the two walls. The walls serve as a mask during angled ion milling to remove outer portions of the electrode layer. The height of the walls and the angle of ion milling determines the width of the resulting top electrode. This leaves the reduced-width top electrode located on the sensor. Because of the directional ion milling using walls that are aligned with the sensor side edges, the reduced-width top electrode is self-aligned in the center of the sensor.
Abstract translation: 用于制造电流垂直于平面的磁阻传感器结构的方法产生在传感器的顶部上“自对准”并且具有小于传感器轨道宽度的宽度的顶部电极。 在传感器侧边缘处制造一对离子铣削材料的壁到偏置层上方的预定高度。 然后将电极材料层沉积在两个壁之间的传感器的顶部上。 在角度离子铣削期间，壁用作掩模以去除电极层的外部部分。 壁的高度和离子铣削的角度决定了所得顶部电极的宽度。 这使得位于传感器上的缩小宽度的顶部电极留下。 由于使用与传感器侧边缘对准的壁进行定向离子研磨，所以缩小宽度的顶部电极在传感器的中心自对准。
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