公开(公告)号：US08670217B1

公开(公告)日：2014-03-11

申请号：US13764613

申请日：2013-02-11

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Yang Li ,  Neil Smith

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

Abstract: A scissoring-type CPP-MR sensor has the two free ferromagnetic layers formed as exchange-coupled structures. Each exchange-coupled structure includes a patterned layer formed of alternating stripes of ferromagnetic stripes and nonmagnetic stripes, and a continuous unpatterned ferromagnetic layer in contact with and exchange-coupled to the ferromagnetic stripes of the patterned layer. The ferromagnetic stripes have a length-to-width aspect ratio of at least 2, which results in increased uniaxial anisotropy of the exchange-coupled unpatterned ferromagnetic layer. The stripes are oriented at an acute angle relative to the disk-facing surface of the sensor, and the stripes of the first free layer are generally orthogonal to the stripes of the second free layers. A hard magnet layer is magnetized in a direction orthogonal to the disk-facing surface for biasing the magnetization directions of the unpatterned ferromagnetic layers in the first and second free layers generally orthogonal to one another.

Abstract translation: 剪切型CPP-MR传感器具有形成为交换耦合结构的两个自由铁磁层。 每个交换耦合结构包括由铁磁条纹和非磁性条纹的交替条纹形成的图案化层，以及与图案化层的铁磁条接触并与其交换耦合的连续未图案化铁磁层。 铁磁条具有至少2的长宽比纵横比，这导致交换耦合的无图案铁磁层的单轴各向异性增加。 条纹相对于传感器的面向盘的表面以锐角取向，并且第一自由层的条纹大致垂直于第二自由层的条纹。 硬磁体层在与面向盘的表面正交的方向上被磁化，用于偏置彼此大致正交的第一和第二自由层中的未图案化铁磁层的磁化方向。

公开(公告)号：US08675309B2

公开(公告)日：2014-03-18

申请号：US13858004

申请日：2013-04-06

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Bruce Alvin Gurney

IPC: G11B5/127 ,  G11B5/39 ,  H03B5/18

CPC classification number: G11B5/3932 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/3903 ,  G11B2005/0005 ,  H03B28/00

Abstract: A spin-torque oscillator with antiferromagnetically-coupled free layers has at least one of the free layers with increased magnetic damping. The Gilbert magnetic damping parameter (α) is at least 0.05. The damped free layer may contain as a dopant one or more damping elements selected from the group consisting of Pt, Pd and the 15 lanthanide elements. The free layer damping may also be increased by a damping layer adjacent the free layer. One type of damping layer may be an antiferromagnetic material, like a Mn alloy. As a modification to the antiferromagnetic damping layer, a bilayer damping layer may be formed of the antiferromagnetic layer and a nonmagnetic metal electrically conductive separation layer between the free layer and the antiferromagnetic layer. Another type of damping layer may be one formed of one or more of the elements selected from Pt, Pd and the lanthanides.

Abstract translation: 具有反铁磁耦合自由层的自旋扭矩振荡器具有增加的磁阻尼的至少一个自由层。 吉尔伯特磁阻尼参数（α）至少为0.05。 阻尼自由层可以含有选自Pt，Pd和15镧系元素的一种或多种阻尼元素作为掺杂剂。 自由层阻尼也可以通过与自由层相邻的阻尼层来增加。 一种类型的阻尼层可以是反铁磁材料，如Mn合金。 作为反铁磁阻尼层的修改，双层阻尼层可以由反铁磁层和自由层与反铁磁性层之间的非磁性金属导电分离层形成。 另一种类型的阻尼层可以是由选自Pt，Pd和镧系元素中的一种或多种元素形成的阻尼层。

公开(公告)号：US08670216B1

公开(公告)日：2014-03-11

申请号：US13764559

申请日：2013-02-11

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Yang Li ,  Neil Smith

IPC: G11B5/39

CPC classification number: G11B5/398 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3272

Abstract: A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has a reference layer formed as an exchange-coupled structure. The exchange-coupled structure includes a patterned layer formed of alternating stripes of ferromagnetic stripes and nonmagnetic stripes, and a continuous unpatterned ferromagnetic layer in contact with and exchange-coupled to the ferromagnetic stripes of the patterned layer. The ferromagnetic stripes have a length-to-width aspect ratio of at least 2, which results in increased uniaxial anisotropy of the exchange-coupled ferromagnetic layer.

Abstract translation: 电流 - 垂直于平面（CPP）磁阻（MR）传感器具有形成为交换耦合结构的参考层。 交换耦合结构包括由铁磁条和非磁条的交替条纹形成的图案层，以及与图案化层的铁磁条接触并与其交换耦合的连续未图案化铁磁层。 铁磁条具有至少为2的长宽比纵横比，这导致交换耦合铁磁层的单轴各向异性增加。

公开(公告)号：US20140340791A1

公开(公告)日：2014-11-20

申请号：US13895411

申请日：2013-05-16

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Yang Li ,  Neil Leslie Robertson ,  Neil Smith ,  Petrus Antonius VanDerHeijden ,  Douglas Johnson Werner

IPC: G11B5/39

CPC classification number: G11B5/3163 ,  G11B5/398

Abstract: A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth.

Abstract translation: 电流垂直于平面磁阻传感器具有比传感器轨道宽度窄的顶部和底部电极。 电极由Cu，Au，Ag和AgSn之一形成，其离子研磨蚀刻速率远高于传感器铁磁材料的蚀刻速率。 离子铣削相对于与电极层的平面垂直的线和传感器堆叠中的层以高角度执行。 由于顶部和底部电极层的材料的蚀刻速率高得多，所以电极层将具有从自由层的侧边缘凹进的侧边缘。 这减小了顶部和底部电极的表面积，这导致通过传感器的自由层的感测电流被限制在较窄的通道中，这相当于具有较窄物理轨道宽度的传感器。

公开(公告)号：US20140291283A1

公开(公告)日：2014-10-02

申请号：US13853411

申请日：2013-03-29

Applicant: HGST NETHERLANDS B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Yang Li ,  Neil Leslie Robertson ,  Neil Smith ,  Petrus Antonius VanDerHeijden ,  Douglas Johnson Werner

IPC: G11B5/39

CPC classification number: G11B5/398 ,  G11B5/3163 ,  Y10T29/49032

Abstract: A method for making a current-perpendicular-to-the-plane magnetoresistive sensor structure produces a top electrode that is “self-aligned” on the top of the sensor and with a width less than the sensor trackwidth. A pair of walls of ion-milling resistant material are fabricated to a predetermined height above the biasing layers at the sensor side edges. A layer of electrode material is then deposited onto the top of the sensor between the two walls. The walls serve as a mask during angled ion milling to remove outer portions of the electrode layer. The height of the walls and the angle of ion milling determines the width of the resulting top electrode. This leaves the reduced-width top electrode located on the sensor. Because of the directional ion milling using walls that are aligned with the sensor side edges, the reduced-width top electrode is self-aligned in the center of the sensor.

Abstract translation: 用于制造电流垂直于平面的磁阻传感器结构的方法产生在传感器的顶部上“自对准”并且具有小于传感器轨道宽度的宽度的顶部电极。 在传感器侧边缘处制造一对离子铣削材料的壁到偏置层上方的预定高度。 然后将电极材料层沉积在两个壁之间的传感器的顶部上。 在角度离子铣削期间，壁用作掩模以去除电极层的外部部分。 壁的高度和离子铣削的角度决定了所得顶部电极的宽度。 这使得位于传感器上的缩小宽度的顶部电极留下。 由于使用与传感器侧边缘对准的壁进行定向离子研磨，所以缩小宽度的顶部电极在传感器的中心自对准。

公开(公告)号：US20130222949A1

公开(公告)日：2013-08-29

申请号：US13858004

申请日：2013-04-06

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Bruce Alvin Gurney

IPC: G11B5/39 ,  H03B28/00

CPC classification number: G11B5/3932 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/3903 ,  G11B2005/0005 ,  H03B28/00

Abstract: A spin-torque oscillator with antiferromagnetically-coupled free layers has at least one of the free layers with increased magnetic damping. The Gilbert magnetic damping parameter (α) is at least 0.05. The damped free layer may contain as a dopant one or more damping elements selected from the group consisting of Pt, Pd and the 15 lanthanide elements. The free layer damping may also be increased by a damping layer adjacent the free layer. One type of damping layer may be an antiferromagnetic material, like a Mn alloy. As a modification to the antiferromagnetic damping layer, a bilayer damping layer may be formed of the antiferromagnetic layer and a nonmagnetic metal electrically conductive separation layer between the free layer and the antiferromagnetic layer. Another type of damping layer may be one formed of one or more of the elements selected from Pt, Pd and the lanthanides.

Abstract translation: 具有反铁磁耦合自由层的自旋扭矩振荡器具有增加的磁阻尼的至少一个自由层。 吉尔伯特磁阻尼参数（α）至少为0.05。 阻尼自由层可以含有选自Pt，Pd和15镧系元素的一种或多种阻尼元素作为掺杂剂。 自由层阻尼也可以通过与自由层相邻的阻尼层来增加。 一种类型的阻尼层可以是反铁磁材料，如Mn合金。 作为反铁磁阻尼层的修改，双层阻尼层可以由反铁磁层和自由层与反铁磁层之间的非磁性金属导电分离层形成。 另一种类型的阻尼层可以是由选自Pt，Pd和镧系元素中的一种或多种元素形成的阻尼层。

公开(公告)号：US20180061887A1

公开(公告)日：2018-03-01

申请号：US15247293

申请日：2016-08-25

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/04 ,  G11C11/16 ,  H01L43/10 ,  H01L23/528

CPC classification number: H01L23/528 ,  G11C11/161 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10

Abstract: An MRAM cell having an MTJ stack with a free layer and an interconnect configured to generate a spin current and a magnetic field effect that is used to affect the magnetic moment of the free layer. The interconnect may comprise a Spin Hall lead. The interconnect may comprise an antiferromagnetic material. An MRAM cell array may include a plurality of bit elements each configured to store at least one bit, an interconnect coupled to the plurality of bit elements, and a transistor formed at a periphery of the MRAM cell array and configured to supply a current to the plurality of bit elements via the interconnect. The interconnect may be configured to generate a spin current and a magnetic field effect that is used to affect the magnetic moment of the free layer of each of the plurality of bit elements.

公开(公告)号：US09218831B1

公开(公告)日：2015-12-22

申请号：US14489299

申请日：2014-09-17

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Jordan Asher Katine ,  Hsin-wei Tseng ,  Howard Gordon Zolla

IPC: G11B5/39

CPC classification number: G11B5/3958 ,  G11B5/3163 ,  G11B5/3945 ,  G11B5/397 ,  G11B5/4886

Abstract: A side-by-side magnetic multi-input multi-output (MIMO) read head is provided. The read head may include a pair of side-by-side MIMO read sensors disposed between a bottom shield, a top shield and between a pair of side shields. The read head may also include a pair of electrical leads, each of which is coupled with one of the MIMO read sensors. The electrical leads extend away from an air bearing surface.

Abstract translation: 提供并行磁性多输入多输出（MIMO）读取头。 读取头可以包括一对并排MIMO读取传感器，其设置在底部屏蔽，顶部屏蔽之间和一对侧面屏蔽之间。 读取头还可以包括一对电引线，每一个电引线与MIMO读取传感器之一耦合。 电气引线远离空气轴承表面延伸。

公开(公告)号：US09236069B2

公开(公告)日：2016-01-12

申请号：US13853411

申请日：2013-03-29

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Yang Li ,  Neil Leslie Robertson ,  Neil Smith ,  Petrus Antonius VanDerHeijden ,  Douglas Johnson Werner

IPC: G11B5/39 ,  G11B5/31

CPC classification number: G11B5/398 ,  G11B5/3163 ,  Y10T29/49032

Abstract: A method for making a current-perpendicular-to-the-plane magnetoresistive sensor structure produces a top electrode that is “self-aligned” on the top of the sensor and with a width less than the sensor trackwidth. A pair of walls of ion-milling resistant material are fabricated to a predetermined height above the biasing layers at the sensor side edges. A layer of electrode material is then deposited onto the top of the sensor between the two walls. The walls serve as a mask during angled ion milling to remove outer portions of the electrode layer. The height of the walls and the angle of ion milling determines the width of the resulting top electrode. This leaves the reduced-width top electrode located on the sensor. Because of the directional ion milling using walls that are aligned with the sensor side edges, the reduced-width top electrode is self-aligned in the center of the sensor.

Abstract translation: 用于制造电流垂直于平面的磁阻传感器结构的方法产生在传感器的顶部上“自对准”并且具有小于传感器轨道宽度的宽度的顶部电极。 在传感器侧边缘处制造一对离子铣削材料的壁到偏置层上方的预定高度。 然后将电极材料层沉积在两个壁之间的传感器的顶部上。 在角度离子铣削期间，壁用作掩模以去除电极层的外部部分。 壁的高度和离子铣削的角度决定了所得顶部电极的宽度。 这使得位于传感器上的缩小宽度的顶部电极留下。 由于使用与传感器侧边缘对准的壁进行定向离子研磨，所以缩小宽度的顶部电极在传感器的中心自对准。

公开(公告)号：US08988833B2

公开(公告)日：2015-03-24

申请号：US13895411

申请日：2013-05-16

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Yang Li ,  Neil Leslie Robertson ,  Neil Smith ,  Petrus Antonius VanDerHeijden ,  Douglas Johnson Werner

IPC: G11B5/39

CPC classification number: G11B5/3163 ,  G11B5/398

Abstract: A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth.

Abstract translation: 电流垂直于平面磁阻传感器具有比传感器轨道宽度窄的顶部和底部电极。 电极由Cu，Au，Ag和AgSn之一形成，其离子研磨蚀刻速率远高于传感器铁磁材料的蚀刻速率。 离子铣削相对于与电极层的平面垂直的线和传感器堆叠中的层以高角度执行。 由于顶部和底部电极层的材料的蚀刻速率高得多，所以电极层将具有从自由层的侧边缘凹进的侧边缘。 这减小了顶部和底部电极的表面积，这导致通过传感器的自由层的感测电流被限制在较窄的通道中，这相当于具有较窄物理轨道宽度的传感器。