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1.发明申请公开(公告)号：US20140168812A1
公开(公告)日：2014-06-19
申请号：US13714322
申请日：2012-12-13
发明人： Patrick M. Braganca , Bruce A. Gurney , Yang Li
IPC分类号： G11B5/11
CPC分类号： G01R33/00 , B82Y10/00 , G01R33/093 , G01R33/1284 , G11B5/332 , G11B2005/0005 , G11B2005/3996 , H01F10/32 , H01F10/3259 , H01F10/3286 , H01F10/329
摘要： In one embodiment, a magnetic head includes a first shield; a spin torque oscillator (STO) sensor positioned above the first shield, the STO sensor comprising a reference layer and a free layer positioned above the reference layer; and at least one shield positioned in a plane that is parallel with a media-facing surface of the STO sensor, the plane also intersecting the STO sensor, wherein one or more of the at least one shield comprises a highly magnetically permeable material that is exchange decoupled and electrically decoupled from the STO sensor. Other magnetic heads, systems, and methods for producing the magnetic heads are described according to more embodiments.
摘要翻译： 在一个实施例中，磁头包括第一屏蔽; 位于第一屏蔽层上方的自旋扭矩振荡器（STO）传感器，STO传感器包括参考层和位于参考层上方的自由层; 以及位于与所述STO传感器的面向介质表面平行的平面中的至少一个屏蔽件，所述平面还与所述STO传感器相交，其中所述至少一个屏蔽件中的一个或多个包括高度可导磁的材料， 与STO传感器解耦并电隔离。 根据更多实施例描述用于制造磁头的其它磁头，系统和方法。
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2.发明授权Scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with free layers having shape anisotropy 有权具有形状各向异性的自由层的剪切型电流 - 垂直于平面（CPP）磁阻传感器公开(公告)号：US08670217B1
公开(公告)日：2014-03-11
申请号：US13764613
申请日：2013-02-11
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A scissoring-type CPP-MR sensor has the two free ferromagnetic layers formed as exchange-coupled structures. Each exchange-coupled structure includes a patterned layer formed of alternating stripes of ferromagnetic stripes and nonmagnetic stripes, and a continuous unpatterned ferromagnetic layer in contact with and exchange-coupled to the ferromagnetic stripes of the patterned layer. The ferromagnetic stripes have a length-to-width aspect ratio of at least 2, which results in increased uniaxial anisotropy of the exchange-coupled unpatterned ferromagnetic layer. The stripes are oriented at an acute angle relative to the disk-facing surface of the sensor, and the stripes of the first free layer are generally orthogonal to the stripes of the second free layers. A hard magnet layer is magnetized in a direction orthogonal to the disk-facing surface for biasing the magnetization directions of the unpatterned ferromagnetic layers in the first and second free layers generally orthogonal to one another.
摘要翻译： 剪切型CPP-MR传感器具有形成为交换耦合结构的两个自由铁磁层。 每个交换耦合结构包括由铁磁条纹和非磁性条纹的交替条纹形成的图案化层，以及与图案化层的铁磁条接触并与其交换耦合的连续未图案化铁磁层。 铁磁条具有至少2的长宽比纵横比，这导致交换耦合的无图案铁磁层的单轴各向异性增加。 条纹相对于传感器的面向盘的表面以锐角取向，并且第一自由层的条纹大致垂直于第二自由层的条纹。 硬磁体层在与面向盘的表面正交的方向上被磁化，用于偏置彼此大致正交的第一和第二自由层中的未图案化铁磁层的磁化方向。
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3.发明授权Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having an antiparallel free (APF) structure with improved magnetic stability 有权具有改进的磁稳定性的具有反平行自由（APF）结构的电流垂直平面（CPP）磁阻（MR）传感器公开(公告)号：US09047892B2
公开(公告)日：2015-06-02
申请号：US14062800
申请日：2013-10-24
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G11B5/3906 , G11B5/3929 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane magnetoresistive sensor has an antiparallel free (APF) structure and soft side shields wherein the upper free layer (FL2) of the APF structure is magnetically coupled antiparallel to the top shield and a top shield seed layer via a nonmagnetic antiparallel coupling (APC) layer. In one embodiment the antiparallel coupling is through an antiferromagnetic-coupling (AFC) layer that provides a dominant antiferromagnetic indirect exchange coupling of FL2 to the top shield. In another embodiment the antiparallel coupling is by an APC layer that decouples FL2 and the top shield and causes the edge-induced magnetostatic coupling between FL2 and the seed layer to dominate. The degree of coupling is controlled by the composition and thickness of the nonmagnetic APC layer between FL2 and the seed layer, and by the thickness of the seed layer.
摘要翻译： 电流垂直于平面的磁阻传感器具有反平行自由（APF）结构和软侧屏蔽，其中APF结构的上自由层（FL2）与顶部屏蔽反向耦合并且顶部屏蔽种子层 通过非磁性反平行耦合（APC）层。 在一个实施例中，反平行耦合通过反铁磁耦合（AFC）层，其提供FL2与顶部屏蔽的显性反铁磁间接交换耦合。 在另一个实施例中，反平行耦合是通过APC层去耦合FL2和顶部屏蔽，并导致FL2和种子层之间的边缘诱导静磁耦合主导。 耦合度由FL2和种子层之间的非磁性APC层的组成和厚度以及种子层的厚度来控制。
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4.发明授权公开(公告)号：US08902544B2
公开(公告)日：2014-12-02
申请号：US13714322
申请日：2012-12-13
发明人： Patrick M. Braganca , Bruce A. Gurney , Yang Li
CPC分类号： G01R33/00 , B82Y10/00 , G01R33/093 , G01R33/1284 , G11B5/332 , G11B2005/0005 , G11B2005/3996 , H01F10/32 , H01F10/3259 , H01F10/3286 , H01F10/329
摘要： In one embodiment, a magnetic head includes a first shield; a spin torque oscillator (STO) sensor positioned above the first shield, the STO sensor comprising a reference layer and a free layer positioned above the reference layer; and at least one shield positioned in a plane that is parallel with a media-facing surface of the STO sensor, the plane also intersecting the STO sensor, wherein one or more of the at least one shield comprises a highly magnetically permeable material that is exchange decoupled and electrically decoupled from the STO sensor. Other magnetic heads, systems, and methods for producing the magnetic heads are described according to more embodiments.
摘要翻译： 在一个实施例中，磁头包括第一屏蔽; 位于第一屏蔽层上方的自旋扭矩振荡器（STO）传感器，STO传感器包括参考层和位于参考层上方的自由层; 以及位于与所述STO传感器的面向介质表面平行的平面中的至少一个屏蔽件，所述平面还与所述STO传感器相交，其中所述至少一个屏蔽件中的一个或多个包括高度可导磁的材料， 与STO传感器解耦并电隔离。 根据更多实施例描述用于制造磁头的其它磁头，系统和方法。
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5.发明申请CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH REDUCED-WIDTH TOP AND BOTTOM ELECTRODES AND METHOD FOR MAKING 有权具有减少顶部和底部电极的电流 - 平面（CPP）磁传感器及其制造方法公开(公告)号：US20140340791A1
公开(公告)日：2014-11-20
申请号：US13895411
申请日：2013-05-16
发明人： Patrick Mesquita Braganca , Jeffrey R. Childress , Jordan Asher Katine , Yang Li , Neil Leslie Robertson , Neil Smith , Petrus Antonius VanDerHeijden , Douglas Johnson Werner
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/398
摘要： A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth.
摘要翻译： 电流垂直于平面磁阻传感器具有比传感器轨道宽度窄的顶部和底部电极。 电极由Cu，Au，Ag和AgSn之一形成，其离子研磨蚀刻速率远高于传感器铁磁材料的蚀刻速率。 离子铣削相对于与电极层的平面垂直的线和传感器堆叠中的层以高角度执行。 由于顶部和底部电极层的材料的蚀刻速率高得多，所以电极层将具有从自由层的侧边缘凹进的侧边缘。 这减小了顶部和底部电极的表面积，这导致通过传感器的自由层的感测电流被限制在较窄的通道中，这相当于具有较窄物理轨道宽度的传感器。
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6.发明申请METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH REDUCED-WIDTH SELF-ALIGNED TOP ELECTRODE 有权用于制造具有减少宽度自对准顶电极的电流 - 平面（CPP）磁传感器（MR）传感器的方法公开(公告)号：US20140291283A1
公开(公告)日：2014-10-02
申请号：US13853411
申请日：2013-03-29
发明人： Patrick Mesquita Braganca , Jeffrey R. Childress , Jordan Asher Katine , Yang Li , Neil Leslie Robertson , Neil Smith , Petrus Antonius VanDerHeijden , Douglas Johnson Werner
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , G11B5/3163 , Y10T29/49032
摘要： A method for making a current-perpendicular-to-the-plane magnetoresistive sensor structure produces a top electrode that is “self-aligned” on the top of the sensor and with a width less than the sensor trackwidth. A pair of walls of ion-milling resistant material are fabricated to a predetermined height above the biasing layers at the sensor side edges. A layer of electrode material is then deposited onto the top of the sensor between the two walls. The walls serve as a mask during angled ion milling to remove outer portions of the electrode layer. The height of the walls and the angle of ion milling determines the width of the resulting top electrode. This leaves the reduced-width top electrode located on the sensor. Because of the directional ion milling using walls that are aligned with the sensor side edges, the reduced-width top electrode is self-aligned in the center of the sensor.
摘要翻译： 用于制造电流垂直于平面的磁阻传感器结构的方法产生在传感器的顶部上“自对准”并且具有小于传感器轨道宽度的宽度的顶部电极。 在传感器侧边缘处制造一对离子铣削材料的壁到偏置层上方的预定高度。 然后将电极材料层沉积在两个壁之间的传感器的顶部上。 在角度离子铣削期间，壁用作掩模以去除电极层的外部部分。 壁的高度和离子铣削的角度决定了所得顶部电极的宽度。 这使得位于传感器上的缩小宽度的顶部电极留下。 由于使用与传感器侧边缘对准的壁进行定向离子研磨，所以缩小宽度的顶部电极在传感器的中心自对准。
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7.发明申请公开(公告)号：US20140175048A1
公开(公告)日：2014-06-26
申请号：US13725479
申请日：2012-12-21
IPC分类号： G11B5/31
CPC分类号： G11B5/3169 , G11B5/3166
摘要： A method of manufacturing a magnetic sensor having a hard bias structure located at a back edge of the sensor. The method forms an electrical lapping guide that is compatible for use with such a sensor having a back edge hard bias structure and which can accurately determine a termination point for a lapping operation that forms an air bearing surface of the slider and determines the sensor stripe height.
摘要翻译： 一种制造具有位于传感器后缘的硬偏置结构的磁传感器的方法。 该方法形成电气研磨引导件，其与具有后缘硬偏置结构的这种传感器兼容使用，并且可以精确地确定形成滑块的空气轴承表面的研磨操作的终止点，并且确定传感器条带高度 。
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公开(公告)号：US20150199177A1
公开(公告)日：2015-07-16
申请号：US14156356
申请日：2014-01-15
发明人： Patrick M. Braganca , Jordan A. Katine , Yang Li , Neil L. Robertson , Qingbo Wang , Haiwen Xi
CPC分类号： G06F7/582 , G06F7/588 , G11B5/3906 , G11B5/3948 , G11B5/746 , G11B2005/0021 , G11C11/1673 , G11C11/1675 , G11C11/5607
摘要： In one general embodiment, a system includes at least one magnetic nanoparticle; a heating device for heating the at least one magnetic nanoparticle to induce a paramagnetic thermal instability in the at least one magnetic nanoparticle whereby a magnetization of the magnetic nanoparticle randomly switches between different detectable magnetic states upon heating thereof; and a magnetoresistance reading device for detecting an instantaneous magnetic state of the magnetic nanoparticle.
摘要翻译： 在一个一般实施例中，系统包括至少一个磁性纳米颗粒; 用于加热所述至少一个磁性纳米颗粒以在所述至少一个磁性纳米颗粒中引起顺磁性热不稳定性的加热装置，由此所述磁性纳米颗粒的磁化在加热时随机地切换在不同的可检测磁状态之间; 以及用于检测磁性纳米颗粒的瞬时磁状态的磁阻读取装置。
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9.发明授权Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with an exchange-coupled reference layer having shape anisotropy 有权具有具有形状各向异性的交换耦合参考层的电流 - 垂直于平面（CPP）磁阻传感器公开(公告)号：US08670216B1
公开(公告)日：2014-03-11
申请号：US13764559
申请日：2013-02-11
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , G01R33/093 , G11B5/3906 , H01F10/3272
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has a reference layer formed as an exchange-coupled structure. The exchange-coupled structure includes a patterned layer formed of alternating stripes of ferromagnetic stripes and nonmagnetic stripes, and a continuous unpatterned ferromagnetic layer in contact with and exchange-coupled to the ferromagnetic stripes of the patterned layer. The ferromagnetic stripes have a length-to-width aspect ratio of at least 2, which results in increased uniaxial anisotropy of the exchange-coupled ferromagnetic layer.
摘要翻译： 电流 - 垂直于平面（CPP）磁阻（MR）传感器具有形成为交换耦合结构的参考层。 交换耦合结构包括由铁磁条和非磁条的交替条纹形成的图案层，以及与图案化层的铁磁条接触并与其交换耦合的连续未图案化铁磁层。 铁磁条具有至少为2的长宽比纵横比，这导致交换耦合铁磁层的单轴各向异性增加。
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公开(公告)号：US09459835B2
公开(公告)日：2016-10-04
申请号：US14156356
申请日：2014-01-15
发明人： Patrick M. Braganca , Jordan A. Katine , Yang Li , Neil L. Robertson , Qingbo Wang , Haiwen Xi
CPC分类号： G06F7/582 , G06F7/588 , G11B5/3906 , G11B5/3948 , G11B5/746 , G11B2005/0021 , G11C11/1673 , G11C11/1675 , G11C11/5607
摘要： In one general embodiment, a system includes at least one magnetic nanoparticle; a heating device for heating the at least one magnetic nanoparticle to induce a paramagnetic thermal instability in the at least one magnetic nanoparticle whereby a magnetization of the magnetic nanoparticle randomly switches between different detectable magnetic states upon heating thereof; and a magnetoresistance reading device for detecting an instantaneous magnetic state of the magnetic nanoparticle.
摘要翻译： 在一个一般实施例中，系统包括至少一个磁性纳米颗粒; 用于加热所述至少一个磁性纳米颗粒以在所述至少一个磁性纳米颗粒中引起顺磁性热不稳定性的加热装置，由此所述磁性纳米颗粒的磁化在加热时随机地切换在不同的可检测磁状态之间; 以及用于检测磁性纳米颗粒的瞬时磁状态的磁阻读取装置。
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