公开(公告)号：US09299370B1

公开(公告)日：2016-03-29

申请号：US14644564

申请日：2015-03-11

Applicant: HGST Netherlands B.V.

Inventor： Sharat Batra ,  Neil Smith ,  Petrus A. Van Der Heijden ,  Howard G. Zolla

IPC: G11B5/39

CPC classification number: G11B5/3958 ,  G11B5/3912 ,  G11B5/3932

Abstract: A system, according to one embodiment, includes a magnetic head having sensor structures disposed laterally along a cross-track direction, each sensor structure having a free layer, a soft bias layer positioned laterally to each sensor structure, an antiparallel coupling layer above each soft bias layer, a magnetic layer above each antiparallel coupling layer, wherein magnetic moments of the soft bias layer and the magnetic layer are antiparallel coupled, and a stabilizing layer above each magnetic layer for stabilizing a magnetic orientation of the magnetic layer. Moreover, opposing faces of the magnetic layers are positioned apart by a distance that causes each magnetic layer to form a magnetic circuit with the associated free layer and the associated soft bias layer.

Abstract translation: 根据一个实施例的系统包括具有沿着横向方向横向布置的传感器结构的磁头，每个传感器结构具有自由层，横向于每个传感器结构定位的柔性偏置层，每个柔性层上方的反平行耦合层 偏置层，每个反平行耦合层上方的磁性层，其中柔性偏置层和磁性层的磁矩反平行耦合，以及在每个磁性层上方的用于稳定磁性层的磁性取向的稳定层。 此外，磁性层的相对表面被隔开一段距离，使得每个磁性层与相关联的自由层和相关联的柔性偏置层形成磁路。

公开(公告)号：US09293160B1

公开(公告)日：2016-03-22

申请号：US14616621

申请日：2015-02-06

Applicant: HGST Netherlands B.V.

Inventor： Goran Mihajlovic ,  Neil Smith

IPC: G11B5/37

CPC classification number: G11B5/37 ,  G11B5/374

Abstract: A system comprising a sensor with a free layer that exhibits an anomalous Hall effect is disclosed. Further, the sensor has a magnetic underlayer below the free layer in a track direction for biasing a magnetic orientation of the free layer in a first magnetic orientation, and a magnetic overlayer above the free layer in the track direction for biasing the magnetic orientation of the free layer in the first magnetic orientation. Still further, the sensor has a lower nonmagnetic spacer layer between the magnetic underlayer and the free layer, and an upper nonmagnetic spacer layer between the magnetic overlayer and the free layer.

Abstract translation: 公开了一种包括具有表现出异常霍尔效应的自由层的传感器的系统。 此外，传感器在轨道方向上具有在自由层下方的磁性底层，用于在第一磁性取向上偏置自由层的磁性取向，以及在轨道方向上的自由层上方的磁性覆盖层，用于偏置磁性取向 自由层在第一磁方向。 此外，传感器在磁性底层和自由层之间具有较低的非磁性间隔层，以及在磁性覆盖层和自由层之间的上部非磁性间隔层。

公开(公告)号：US20150002961A1

公开(公告)日：2015-01-01

申请号：US13928307

申请日：2013-06-26

Applicant: HGST Netherlands B.V.

Inventor： Christopher D. Keener ,  Quang Le ,  David J. Seagle ,  Neil Smith ,  Petrus A. Van Der Heijden

IPC: G11B5/147 ,  G11B5/31

CPC classification number: G11B5/3163 ,  G11B5/3932 ,  G11B5/398

Abstract: A scissor type magnetic sensor having a soft magnetic bias structure located at a back edge of the sensor stack. The sensor stack includes first and second magnetic free layers that are anti-parallel coupled across a non-magnetic layer sandwiched there-between. The soft magnetic bias structure has a length as measured perpendicular to the air bearing surface that is greater than its width as measured parallel with the air bearing surface. This shape allows the soft magnetic bias structure to have a magnetization that is maintained in a direction perpendicular to the air bearing surface and which allows the bias structure to maintain a magnetic bias field for biasing the free layers of the sensor stack.

Abstract translation: 具有位于传感器堆叠的后边缘的软磁偏置结构的剪刀式磁传感器。 传感器堆叠包括第一和第二无磁性层，其跨过夹在其间的非磁性层反平行耦合。 软磁偏置结构具有垂直于空气轴承表面测量的长度，该长度大于其与空气轴承表面平行测量的宽度。 这种形状允许软磁偏置结构具有在垂直于空气轴承表面的方向上保持的磁化，并且允许偏置结构保持用于偏置传感器堆叠的自由层的磁偏置场。

公开(公告)号：US08670217B1

公开(公告)日：2014-03-11

申请号：US13764613

申请日：2013-02-11

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Yang Li ,  Neil Smith

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

Abstract: A scissoring-type CPP-MR sensor has the two free ferromagnetic layers formed as exchange-coupled structures. Each exchange-coupled structure includes a patterned layer formed of alternating stripes of ferromagnetic stripes and nonmagnetic stripes, and a continuous unpatterned ferromagnetic layer in contact with and exchange-coupled to the ferromagnetic stripes of the patterned layer. The ferromagnetic stripes have a length-to-width aspect ratio of at least 2, which results in increased uniaxial anisotropy of the exchange-coupled unpatterned ferromagnetic layer. The stripes are oriented at an acute angle relative to the disk-facing surface of the sensor, and the stripes of the first free layer are generally orthogonal to the stripes of the second free layers. A hard magnet layer is magnetized in a direction orthogonal to the disk-facing surface for biasing the magnetization directions of the unpatterned ferromagnetic layers in the first and second free layers generally orthogonal to one another.

Abstract translation: 剪切型CPP-MR传感器具有形成为交换耦合结构的两个自由铁磁层。 每个交换耦合结构包括由铁磁条纹和非磁性条纹的交替条纹形成的图案化层，以及与图案化层的铁磁条接触并与其交换耦合的连续未图案化铁磁层。 铁磁条具有至少2的长宽比纵横比，这导致交换耦合的无图案铁磁层的单轴各向异性增加。 条纹相对于传感器的面向盘的表面以锐角取向，并且第一自由层的条纹大致垂直于第二自由层的条纹。 硬磁体层在与面向盘的表面正交的方向上被磁化，用于偏置彼此大致正交的第一和第二自由层中的未图案化铁磁层的磁化方向。

公开(公告)号：US09153258B2

公开(公告)日：2015-10-06

申请号：US14095932

申请日：2013-12-03

Applicant: HGST Netherlands B.V.

Inventor： Quang Le ,  David J. Seagle ,  Neil Smith ,  Petrus A. Van Der Heijden

IPC: G11B5/39 ,  G11B5/596

CPC classification number: G11B5/3906 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/398 ,  G11B5/59683 ,  G11B2005/3996 ,  Y10T428/1129

Abstract: A scissor type magnetic sensor having a back edge bias structure that has a non-uniform magnetic moment to compensate for differences in magnetic spacing between the bias structure and a first magnetic free layer as compared with the magnetic spacing between the bias structure and a second magnetic free layer. The magnetic bias structure can include a first magnetic layer and a second magnetic layer formed over the first magnetic layer, with the first magnetic layer having a higher magnetic moment than the second magnetic layer.

Abstract translation: 一种具有后缘偏置结构的剪刀式磁传感器，其具有不均匀的磁矩以补偿偏置结构和第一无磁性层之间的磁间隔的差异，与偏置结构和第二磁性之间的磁间隔相比 自由层。 磁偏置结构可以包括形成在第一磁性层上的第一磁性层和第二磁性层，其中第一磁性层具有比第二磁性层更高的磁矩。

公开(公告)号：US20150154991A1

公开(公告)日：2015-06-04

申请号：US14095932

申请日：2013-12-03

Applicant: HGST Netherlands B.V.

Inventor： Quang Le ,  David J. Seagle ,  Neil Smith ,  Petrus A. Van Der Heijden

IPC: G11B5/39 ,  G11B5/596

CPC classification number: G11B5/3906 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/398 ,  G11B5/59683 ,  G11B2005/3996 ,  Y10T428/1129

Abstract: A scissor type magnetic sensor having a back edge bias structure that has a non-uniform magnetic moment to compensate for differences in magnetic spacing between the bias structure and a first magnetic free layer as compared with the magnetic spacing between the bias structure and a second magnetic free layer. The magnetic bias structure can include a first magnetic layer and a second magnetic layer formed over the first magnetic layer, with the first magnetic layer having a higher magnetic moment than the second magnetic layer.

Abstract translation: 一种具有后缘偏置结构的剪刀式磁传感器，其具有不均匀的磁矩以补偿偏置结构和第一无磁性层之间的磁间隔的差异，与偏置结构和第二磁性之间的磁间隔相比 自由层。 磁偏置结构可以包括形成在第一磁性层上的第一磁性层和第二磁性层，其中第一磁性层具有比第二磁性层更高的磁矩。

公开(公告)号：US08670216B1

公开(公告)日：2014-03-11

申请号：US13764559

申请日：2013-02-11

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Yang Li ,  Neil Smith

IPC: G11B5/39

CPC classification number: G11B5/398 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3272

Abstract: A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has a reference layer formed as an exchange-coupled structure. The exchange-coupled structure includes a patterned layer formed of alternating stripes of ferromagnetic stripes and nonmagnetic stripes, and a continuous unpatterned ferromagnetic layer in contact with and exchange-coupled to the ferromagnetic stripes of the patterned layer. The ferromagnetic stripes have a length-to-width aspect ratio of at least 2, which results in increased uniaxial anisotropy of the exchange-coupled ferromagnetic layer.

Abstract translation: 电流 - 垂直于平面（CPP）磁阻（MR）传感器具有形成为交换耦合结构的参考层。 交换耦合结构包括由铁磁条和非磁条的交替条纹形成的图案层，以及与图案化层的铁磁条接触并与其交换耦合的连续未图案化铁磁层。 铁磁条具有至少为2的长宽比纵横比，这导致交换耦合铁磁层的单轴各向异性增加。

公开(公告)号：US09042059B1

公开(公告)日：2015-05-26

申请号：US14277978

申请日：2014-05-15

Applicant: HGST Netherlands B.V.

Inventor： Jordan Asher Katine ,  Stefan Maat ,  Neil Smith ,  Alexander M. Zeltser ,  Howard Gordon Zolla

IPC: G11B5/39 ,  G11B5/115

CPC classification number: G11B5/397 ,  G11B5/115 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3954 ,  G11B2005/3996

Abstract: A two-dimensional magnetic recording (TDMR) read head has upper and lower read sensors wherein the lower read sensor has its magnetization biased by side shields of soft magnetic material. The center shield between the lower and upper sensors may be an antiparallel structure (APS) with two ferromagnetic layers separated by an antiparallel coupling (APC) layer. The center shield has a central region and two side regions, but there is no antiferromagnetic (AF) layer in the central region. Instead the two side regions of the upper ferromagnetic layer in the APS are pinned by AF tab layers that are electrically isolated from the upper sensor. The upper ferromagnetic layer and the APC layer in the APS may also be located only in the side regions. The thickness of the center shield can thus be made thinner, which reduces the free layer to free layer spacing.

Abstract translation: 二维磁记录（TDMR）读头具有上和下读传感器，其中下读传感器具有由软磁材料的侧屏偏压的磁化。 下传感器和上传感器之间的中心屏蔽可能是具有由反平行耦合（APC）层隔开的两个铁磁层的反并联结构（APS）。 中心屏蔽具有中心区域和两个侧面区域，但在中心区域中没有反铁磁（AF）层。 相反，APS中的上铁磁层的两侧区域被与上传感器电隔离的AF贴片层固定。 APS中的上铁磁层和APC层也可以仅位于侧区域中。 因此，中心屏蔽层的厚度可以变得更薄，这将自由层减小到自由层间距。

公开(公告)号：US20140340791A1

公开(公告)日：2014-11-20

申请号：US13895411

申请日：2013-05-16

Applicant: HGST Netherlands B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Yang Li ,  Neil Leslie Robertson ,  Neil Smith ,  Petrus Antonius VanDerHeijden ,  Douglas Johnson Werner

IPC: G11B5/39

CPC classification number: G11B5/3163 ,  G11B5/398

Abstract: A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth.

Abstract translation: 电流垂直于平面磁阻传感器具有比传感器轨道宽度窄的顶部和底部电极。 电极由Cu，Au，Ag和AgSn之一形成，其离子研磨蚀刻速率远高于传感器铁磁材料的蚀刻速率。 离子铣削相对于与电极层的平面垂直的线和传感器堆叠中的层以高角度执行。 由于顶部和底部电极层的材料的蚀刻速率高得多，所以电极层将具有从自由层的侧边缘凹进的侧边缘。 这减小了顶部和底部电极的表面积，这导致通过传感器的自由层的感测电流被限制在较窄的通道中，这相当于具有较窄物理轨道宽度的传感器。

公开(公告)号：US20140291283A1

公开(公告)日：2014-10-02

申请号：US13853411

申请日：2013-03-29

Applicant: HGST NETHERLANDS B.V.

Inventor： Patrick Mesquita Braganca ,  Jeffrey R. Childress ,  Jordan Asher Katine ,  Yang Li ,  Neil Leslie Robertson ,  Neil Smith ,  Petrus Antonius VanDerHeijden ,  Douglas Johnson Werner

IPC: G11B5/39

CPC classification number: G11B5/398 ,  G11B5/3163 ,  Y10T29/49032

Abstract: A method for making a current-perpendicular-to-the-plane magnetoresistive sensor structure produces a top electrode that is “self-aligned” on the top of the sensor and with a width less than the sensor trackwidth. A pair of walls of ion-milling resistant material are fabricated to a predetermined height above the biasing layers at the sensor side edges. A layer of electrode material is then deposited onto the top of the sensor between the two walls. The walls serve as a mask during angled ion milling to remove outer portions of the electrode layer. The height of the walls and the angle of ion milling determines the width of the resulting top electrode. This leaves the reduced-width top electrode located on the sensor. Because of the directional ion milling using walls that are aligned with the sensor side edges, the reduced-width top electrode is self-aligned in the center of the sensor.

Abstract translation: 用于制造电流垂直于平面的磁阻传感器结构的方法产生在传感器的顶部上“自对准”并且具有小于传感器轨道宽度的宽度的顶部电极。 在传感器侧边缘处制造一对离子铣削材料的壁到偏置层上方的预定高度。 然后将电极材料层沉积在两个壁之间的传感器的顶部上。 在角度离子铣削期间，壁用作掩模以去除电极层的外部部分。 壁的高度和离子铣削的角度决定了所得顶部电极的宽度。 这使得位于传感器上的缩小宽度的顶部电极留下。 由于使用与传感器侧边缘对准的壁进行定向离子研磨，所以缩小宽度的顶部电极在传感器的中心自对准。