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公开(公告)号：US20170062519A1
公开(公告)日：2017-03-02
申请号：US14835021
申请日：2015-08-25
发明人： Zvonimir Z. Bandic , Jeffery Robinson Childress , Luiz M. Franca-Neto , Jordan Asher Katine , Neil Leslie Robertson
CPC分类号： H01L27/222 , G11C11/161 , H01L25/18 , H01L25/50 , H01L43/02 , H01L43/08 , H01L43/12 , H01L2924/1434
摘要： A magnetic memory integrated with complementary metal oxide semiconductor (CMOS) driving circuits and a method for implementing magnetic memory integrated with complementary metal oxide semiconductor (CMOS) driving circuits for use in Solid-State Drives (SSDs) are provided. A complementary metal oxide semiconductor (CMOS) wafer is provided, and a magnetic memory is formed on top of the CMOS wafer providing a functioning magnetic memory chip.
摘要翻译： 与互补金属氧化物半导体（CMOS）驱动电路集成的磁存储器和用于实现与用于固态驱动器（SSD）的互补金属氧化物半导体（CMOS）驱动电路集成的磁存储器的方法）。 提供互补金属氧化物半导体（CMOS）晶片，并且在提供功能磁性存储器芯片的CMOS晶片的顶部上形成磁存储器。
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公开(公告)号：US20170062034A1
公开(公告)日：2017-03-02
申请号：US14834743
申请日：2015-08-25
发明人： Zvonimir Z. Bandic , Jeffery Robinson Childress , Luiz M. Franca-Neto , Jordan Asher Katine , Neil Leslie Robertson
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1653 , G11C11/1657 , G11C11/1673 , H01L27/228 , H01L43/08
摘要： A magnetic memory cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell includes a first conductor M1, and a second conductor M2 and a programmable area using unpatterned programmable magnetic media. At least one of the conductors M1, M2 is formed of a magnetic material, and the conductor M2 is more conductive than conductor M1. Steering of current is provided for programming the magnetic memory cell.
摘要翻译： 提供了一种磁存储单元和用于实现在固态硬盘（SSD）中使用的磁存储单元的方法。 磁存储单元包括第一导体M1和第二导体M2以及使用非图案化可编程磁性介质的可编程区域。 导体M1，M2中的至少一个由磁性材料形成，并且导体M2比导体M1更具导电性。 提供电流转向用于对磁存储单元进行编程。
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3.发明申请HEAT-ASSISTED MAGNETIC RECORDING (HAMR) HEAD WITH DIFFUSION BARRIER BETWEEN WAVEGUIDE CORE AND WRITE POLE LIP 有权加热磁记录（HAMR）头与波形核和写入点之间的扩散障碍公开(公告)号：US20140313872A1
公开(公告)日：2014-10-23
申请号：US13868897
申请日：2013-04-23
IPC分类号： G11B13/04
CPC分类号： G11B13/045 , G11B5/3106 , G11B5/3116 , G11B5/314 , G11B5/4866 , G11B5/6088 , G11B2005/0021
摘要： A heat-assisted magnetic recording (HAMR) head in which the core of the optical waveguide has an end face that abuts the NFT and the write pole lip has a diffusion barrier between the end face of the waveguide core and the write pole lip. The diffusion barrier layer may also be located between the waveguide core end face and the NFT, in which case it is formed of an optically transparent material, like TaNx, TiNx, ZrNx, HfNX, NbNx, CrNx, VNx, TiC, TaC, WC, SiC or SiNx, or a layer of Au, Ru, Rh or Ir with a thickness less than 5 nm. In addition to being located between both the NFT and the write pole lip and the waveguide core end face, the diffusion barrier layer may also be located between the waveguide core and the lower waveguide cladding layer.
摘要翻译： 一种热辅助磁记录（HAMR）头，其中光波导的芯具有与NFT相邻的端面，并且写极唇在波导芯的端面和写极唇之间具有扩散阻挡层。 扩散阻挡层也可以位于波导芯端面和NFT之间，在这种情况下，它由诸如TaNx，TiNx，ZrNx，HfNX，NbNx，CrNx，VNx，TiC，TaC，WC的光学透明材料形成 ，SiC或SiNx，或厚度小于5nm的Au，Ru，Rh或Ir层。 除了位于NFT和写磁极极和波导芯端面之外，扩散阻挡层也可以位于波导芯和下波导包层之间。
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4.发明授权Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reduced-width self-aligned top electrode 有权制造具有减小宽度自对准顶电极的电流垂直平面（CPP）磁阻（MR）传感器的方法公开(公告)号：US09236069B2
公开(公告)日：2016-01-12
申请号：US13853411
申请日：2013-03-29
发明人： Patrick Mesquita Braganca , Jeffrey R. Childress , Jordan Asher Katine , Yang Li , Neil Leslie Robertson , Neil Smith , Petrus Antonius VanDerHeijden , Douglas Johnson Werner
CPC分类号： G11B5/398 , G11B5/3163 , Y10T29/49032
摘要： A method for making a current-perpendicular-to-the-plane magnetoresistive sensor structure produces a top electrode that is “self-aligned” on the top of the sensor and with a width less than the sensor trackwidth. A pair of walls of ion-milling resistant material are fabricated to a predetermined height above the biasing layers at the sensor side edges. A layer of electrode material is then deposited onto the top of the sensor between the two walls. The walls serve as a mask during angled ion milling to remove outer portions of the electrode layer. The height of the walls and the angle of ion milling determines the width of the resulting top electrode. This leaves the reduced-width top electrode located on the sensor. Because of the directional ion milling using walls that are aligned with the sensor side edges, the reduced-width top electrode is self-aligned in the center of the sensor.
摘要翻译： 用于制造电流垂直于平面的磁阻传感器结构的方法产生在传感器的顶部上“自对准”并且具有小于传感器轨道宽度的宽度的顶部电极。 在传感器侧边缘处制造一对离子铣削材料的壁到偏置层上方的预定高度。 然后将电极材料层沉积在两个壁之间的传感器的顶部上。 在角度离子铣削期间，壁用作掩模以去除电极层的外部部分。 壁的高度和离子铣削的角度决定了所得顶部电极的宽度。 这使得位于传感器上的缩小宽度的顶部电极留下。 由于使用与传感器侧边缘对准的壁进行定向离子研磨，所以缩小宽度的顶部电极在传感器的中心自对准。
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5.发明授权Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with reduced-width top and bottom electrodes and method for making 有权具有减小宽度的顶部和底部电极的电流垂直平面（CPP）磁阻传感器和制造方法公开(公告)号：US08988833B2
公开(公告)日：2015-03-24
申请号：US13895411
申请日：2013-05-16
发明人： Patrick Mesquita Braganca , Jeffrey R. Childress , Jordan Asher Katine , Yang Li , Neil Leslie Robertson , Neil Smith , Petrus Antonius VanDerHeijden , Douglas Johnson Werner
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/398
摘要： A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth.
摘要翻译： 电流垂直于平面磁阻传感器具有比传感器轨道宽度窄的顶部和底部电极。 电极由Cu，Au，Ag和AgSn之一形成，其离子研磨蚀刻速率远高于传感器铁磁材料的蚀刻速率。 离子铣削相对于与电极层的平面垂直的线和传感器堆叠中的层以高角度执行。 由于顶部和底部电极层的材料的蚀刻速率高得多，所以电极层将具有从自由层的侧边缘凹进的侧边缘。 这减小了顶部和底部电极的表面积，这导致通过传感器的自由层的感测电流被限制在较窄的通道中，这相当于具有较窄物理轨道宽度的传感器。
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公开(公告)号：US09520444B1
公开(公告)日：2016-12-13
申请号：US14834856
申请日：2015-08-25
发明人： Zvonimir Z. Bandic , Jeffery Robinson Childress , Luiz M. Franca-Neto , Jordan Asher Katine , Neil Leslie Robertson
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/02 , H01L43/12
摘要： A magnetic memory pillar cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell includes a first conductor M1, and a second conductor M2, the second conductor M1 surrounded by the first conductor M1 and a programmable area using unpatterned programmable magnetic media. At least one of the conductors M1, M2 is formed of a magnetic material, and the conductor M2 is more conductive than conductor M1. An oxide barrier extends between the first conductor M1 and a programmable input to the magnetic memory pillar cell; and the oxide barrier is unpatterned.
摘要翻译： 提供了一种用于固态硬盘（SSD）中使用的磁记忆体单元和用于实现磁存储单元的方法。 磁存储单元包括第一导体M1和第二导体M2，由第一导体M1包围的第二导体M1和使用未图案化的可编程磁性介质的可编程区域。 导体M1，M2中的至少一个由磁性材料形成，并且导体M2比导体M1更具导电性。 氧化物屏障在第一导体M1和与磁性存储器柱单元的可编程输入之间延伸; 并且氧化物屏障是未图案化的。
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7.发明授权Implementing 3D scalable magnetic memory with interlayer dielectric stack and pillar holes having programmable area 有权实现具有层间电介质堆叠和具有可编程区域的柱孔的3D可缩放磁存储器公开(公告)号：US09443905B1
公开(公告)日：2016-09-13
申请号：US14834929
申请日：2015-08-25
发明人： Zvonimir Z. Bandic , Jeffery Robinson Childress , Luiz M. Franca-Neto , Jordan Asher Katine , Neil Leslie Robertson
IPC分类号： G11C11/00 , H01L27/22 , H01L43/12 , G11C16/04 , G11C16/10 , H01L43/02 , H01L43/08 , H01L21/28 , G11C11/16
CPC分类号： H01L27/222 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L21/28026 , H01L43/08 , H01L43/12
摘要： A three-dimensional (3D) scalable magnetic memory array and a method for implementing the three-dimensional (3D) scalable magnetic memory array for use in Solid-State Drives (SSDs) are provided. A three-dimensional (3D) scalable magnetic memory array includes an interlayer dielectric (IDL) stack of word planes separated by a respective IDL. A plurality of pillar holes is formed in the IDL stack in a single etch step; each of the pillar holes including an oxide barrier coating, and a first conductor M1, and a second conductor M2 forming magnetic pillar memory cells. The first conductor M1 is formed of a magnetic material, and the second conductor M2 is more electrically conductive than the conductor M1; and each of the magnetic pillar memory cell inside the pillar holes have a programmable area using unpatterned programmable magnetic media proximate to a respective one of the word planes.
摘要翻译： 提供了三维（3D）可扩展磁存储器阵列和用于实现在固态硬盘（SSD）中使用的三维（3D）可扩展磁存储器阵列的方法。 三维（3D）可扩展磁存储器阵列包括由相应的IDL分开的字平面层间电介质（IDL）堆叠。 在单个蚀刻步骤中，在IDL叠层中形成多个柱孔; 每个柱孔包括氧化物阻挡涂层和第一导体M1，以及形成磁柱存储单元的第二导体M2。 第一导体M1由磁性材料形成，第二导体M2比导体M1更具导电性; 并且柱孔内的每个磁柱存储单元具有使用靠近相应的一个字平面的未图案化的可编程磁性介质的可编程区域。
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8.发明授权Heat-assisted magnetic recording (HAMR) head with diffusion barrier between waveguide core and write pole lip 有权热辅助磁记录（HAMR）头在波导芯和写极唇之间具有扩散屏障公开(公告)号：US09047908B2
公开(公告)日：2015-06-02
申请号：US13868897
申请日：2013-04-23
CPC分类号： G11B13/045 , G11B5/3106 , G11B5/3116 , G11B5/314 , G11B5/4866 , G11B5/6088 , G11B2005/0021
摘要： A heat-assisted magnetic recording (HAMR) head in which the core of the optical waveguide has an end face that abuts the NFT and the write pole lip has a diffusion barrier between the end face of the waveguide core and the write pole lip. The diffusion barrier layer may also be located between the waveguide core end face and the NFT, in which case it is formed of an optically transparent material, like TaNx, TiNx, ZrNx, HfNx, NbNx, CrNx, VNx, TiC, TaC, WC, SiC or SiNx, or a layer of Au, Ru, Rh or Ir with a thickness less than 5 nm. In addition to being located between both the NFT and the write pole lip and the waveguide core end face, the diffusion barrier layer may also be located between the waveguide core and the lower waveguide cladding layer.
摘要翻译： 一种热辅助磁记录（HAMR）头，其中光波导的芯具有与NFT相邻的端面，并且写极唇在波导芯的端面和写极唇之间具有扩散阻挡层。 扩散阻挡层也可以位于波导芯端面和NFT之间，在这种情况下，它由诸如TaNx，TiNx，ZrNx，HfNx，NbNx，CrNx，VNx，TiC，TaC，WC的光学透明材料形成 ，SiC或SiNx，或厚度小于5nm的Au，Ru，Rh或Ir层。 除了位于NFT和写磁极极和波导芯端面之外，扩散阻挡层也可以位于波导芯和下波导包层之间。
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9.发明申请CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH REDUCED-WIDTH TOP AND BOTTOM ELECTRODES AND METHOD FOR MAKING 有权具有减少顶部和底部电极的电流 - 平面（CPP）磁传感器及其制造方法公开(公告)号：US20140340791A1
公开(公告)日：2014-11-20
申请号：US13895411
申请日：2013-05-16
发明人： Patrick Mesquita Braganca , Jeffrey R. Childress , Jordan Asher Katine , Yang Li , Neil Leslie Robertson , Neil Smith , Petrus Antonius VanDerHeijden , Douglas Johnson Werner
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/398
摘要： A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth.
摘要翻译： 电流垂直于平面磁阻传感器具有比传感器轨道宽度窄的顶部和底部电极。 电极由Cu，Au，Ag和AgSn之一形成，其离子研磨蚀刻速率远高于传感器铁磁材料的蚀刻速率。 离子铣削相对于与电极层的平面垂直的线和传感器堆叠中的层以高角度执行。 由于顶部和底部电极层的材料的蚀刻速率高得多，所以电极层将具有从自由层的侧边缘凹进的侧边缘。 这减小了顶部和底部电极的表面积，这导致通过传感器的自由层的感测电流被限制在较窄的通道中，这相当于具有较窄物理轨道宽度的传感器。
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10.发明申请METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH REDUCED-WIDTH SELF-ALIGNED TOP ELECTRODE 有权用于制造具有减少宽度自对准顶电极的电流 - 平面（CPP）磁传感器（MR）传感器的方法公开(公告)号：US20140291283A1
公开(公告)日：2014-10-02
申请号：US13853411
申请日：2013-03-29
发明人： Patrick Mesquita Braganca , Jeffrey R. Childress , Jordan Asher Katine , Yang Li , Neil Leslie Robertson , Neil Smith , Petrus Antonius VanDerHeijden , Douglas Johnson Werner
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , G11B5/3163 , Y10T29/49032
摘要： A method for making a current-perpendicular-to-the-plane magnetoresistive sensor structure produces a top electrode that is “self-aligned” on the top of the sensor and with a width less than the sensor trackwidth. A pair of walls of ion-milling resistant material are fabricated to a predetermined height above the biasing layers at the sensor side edges. A layer of electrode material is then deposited onto the top of the sensor between the two walls. The walls serve as a mask during angled ion milling to remove outer portions of the electrode layer. The height of the walls and the angle of ion milling determines the width of the resulting top electrode. This leaves the reduced-width top electrode located on the sensor. Because of the directional ion milling using walls that are aligned with the sensor side edges, the reduced-width top electrode is self-aligned in the center of the sensor.
摘要翻译： 用于制造电流垂直于平面的磁阻传感器结构的方法产生在传感器的顶部上“自对准”并且具有小于传感器轨道宽度的宽度的顶部电极。 在传感器侧边缘处制造一对离子铣削材料的壁到偏置层上方的预定高度。 然后将电极材料层沉积在两个壁之间的传感器的顶部上。 在角度离子铣削期间，壁用作掩模以去除电极层的外部部分。 壁的高度和离子铣削的角度决定了所得顶部电极的宽度。 这使得位于传感器上的缩小宽度的顶部电极留下。 由于使用与传感器侧边缘对准的壁进行定向离子研磨，所以缩小宽度的顶部电极在传感器的中心自对准。
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