公开(公告)号：US09520444B1

公开(公告)日：2016-12-13

申请号：US14834856

申请日：2015-08-25

Applicant: HGST Netherlands B.V.

Inventor： Zvonimir Z. Bandic ,  Jeffery Robinson Childress ,  Luiz M. Franca-Neto ,  Jordan Asher Katine ,  Neil Leslie Robertson

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/222 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetic memory pillar cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell includes a first conductor M1, and a second conductor M2, the second conductor M1 surrounded by the first conductor M1 and a programmable area using unpatterned programmable magnetic media. At least one of the conductors M1, M2 is formed of a magnetic material, and the conductor M2 is more conductive than conductor M1. An oxide barrier extends between the first conductor M1 and a programmable input to the magnetic memory pillar cell; and the oxide barrier is unpatterned.

Abstract translation: 提供了一种用于固态硬盘（SSD）中使用的磁记忆体单元和用于实现磁存储单元的方法。 磁存储单元包括第一导体M1和第二导体M2，由第一导体M1包围的第二导体M1和使用未图案化的可编程磁性介质的可编程区域。 导体M1，M2中的至少一个由磁性材料形成，并且导体M2比导体M1更具导电性。 氧化物屏障在第一导体M1和与磁性存储器柱单元的可编程输入之间延伸; 并且氧化物屏障是未图案化的。

公开(公告)号：US09443905B1

公开(公告)日：2016-09-13

申请号：US14834929

申请日：2015-08-25

Applicant: HGST Netherlands B.V.

Inventor： Zvonimir Z. Bandic ,  Jeffery Robinson Childress ,  Luiz M. Franca-Neto ,  Jordan Asher Katine ,  Neil Leslie Robertson

IPC: G11C11/00 ,  H01L27/22 ,  H01L43/12 ,  G11C16/04 ,  G11C16/10 ,  H01L43/02 ,  H01L43/08 ,  H01L21/28 ,  G11C11/16

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L21/28026 ,  H01L43/08 ,  H01L43/12

Abstract: A three-dimensional (3D) scalable magnetic memory array and a method for implementing the three-dimensional (3D) scalable magnetic memory array for use in Solid-State Drives (SSDs) are provided. A three-dimensional (3D) scalable magnetic memory array includes an interlayer dielectric (IDL) stack of word planes separated by a respective IDL. A plurality of pillar holes is formed in the IDL stack in a single etch step; each of the pillar holes including an oxide barrier coating, and a first conductor M1, and a second conductor M2 forming magnetic pillar memory cells. The first conductor M1 is formed of a magnetic material, and the second conductor M2 is more electrically conductive than the conductor M1; and each of the magnetic pillar memory cell inside the pillar holes have a programmable area using unpatterned programmable magnetic media proximate to a respective one of the word planes.

Abstract translation: 提供了三维（3D）可扩展磁存储器阵列和用于实现在固态硬盘（SSD）中使用的三维（3D）可扩展磁存储器阵列的方法。 三维（3D）可扩展磁存储器阵列包括由相应的IDL分开的字平面层间电介质（IDL）堆叠。 在单个蚀刻步骤中，在IDL叠层中形成多个柱孔; 每个柱孔包括氧化物阻挡涂层和第一导体M1，以及形成磁柱存储单元的第二导体M2。 第一导体M1由磁性材料形成，第二导体M2比导体M1更具导电性; 并且柱孔内的每个磁柱存储单元具有使用靠近相应的一个字平面的未图案化的可编程磁性介质的可编程区域。

公开(公告)号：US20170062519A1

公开(公告)日：2017-03-02

申请号：US14835021

申请日：2015-08-25

Applicant: HGST Netherlands B.V.

Inventor： Zvonimir Z. Bandic ,  Jeffery Robinson Childress ,  Luiz M. Franca-Neto ,  Jordan Asher Katine ,  Neil Leslie Robertson

IPC: H01L27/22 ,  H01L25/18 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L25/18 ,  H01L25/50 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L2924/1434

Abstract: A magnetic memory integrated with complementary metal oxide semiconductor (CMOS) driving circuits and a method for implementing magnetic memory integrated with complementary metal oxide semiconductor (CMOS) driving circuits for use in Solid-State Drives (SSDs) are provided. A complementary metal oxide semiconductor (CMOS) wafer is provided, and a magnetic memory is formed on top of the CMOS wafer providing a functioning magnetic memory chip.

Abstract translation: 与互补金属氧化物半导体（CMOS）驱动电路集成的磁存储器和用于实现与用于固态驱动器（SSD）的互补金属氧化物半导体（CMOS）驱动电路集成的磁存储器的方法）。 提供互补金属氧化物半导体（CMOS）晶片，并且在提供功能磁性存储器芯片的CMOS晶片的顶部上形成磁存储器。

公开(公告)号：US20170062034A1

公开(公告)日：2017-03-02

申请号：US14834743

申请日：2015-08-25

Applicant: HGST Netherlands B.V.

Inventor： Zvonimir Z. Bandic ,  Jeffery Robinson Childress ,  Luiz M. Franca-Neto ,  Jordan Asher Katine ,  Neil Leslie Robertson

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1673 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetic memory cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell includes a first conductor M1, and a second conductor M2 and a programmable area using unpatterned programmable magnetic media. At least one of the conductors M1, M2 is formed of a magnetic material, and the conductor M2 is more conductive than conductor M1. Steering of current is provided for programming the magnetic memory cell.

Abstract translation: 提供了一种磁存储单元和用于实现在固态硬盘（SSD）中使用的磁存储单元的方法。 磁存储单元包括第一导体M1和第二导体M2以及使用非图案化可编程磁性介质的可编程区域。 导体M1，M2中的至少一个由磁性材料形成，并且导体M2比导体M1更具导电性。 提供电流转向用于对磁存储单元进行编程。