公开(公告)号：US20170154643A1

公开(公告)日：2017-06-01

申请号：US14956251

申请日：2015-12-01

申请人： HGST Netherlands B.V.

发明人： Kouichi Nishioka ,  Zheng Gao ,  Ching Tsang ,  Quang Le ,  Sangmun Oh

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3945 ,  G11B2005/3996

摘要： A read head is provided with a scissors sensor. The read head may include a bottom magnetic shield, and a first non-magnetic seed layer, a magnetic seed layer, a second non-magnetic seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order. A pair of magnetic side shield layers may be positioned on respective sides of the second free magnetic layer.

公开(公告)号：US20170154641A1

公开(公告)日：2017-06-01

申请号：US14955878

申请日：2015-12-01

申请人： HGST Netherlands B.V.

发明人： Wenqin Hao ,  Quang Le ,  Xiaoyong Liu ,  Suping Song ,  Lei Wang

IPC分类号： G11B5/31

CPC分类号： G11B5/3912 ,  G11B5/3932 ,  G11B5/3935 ,  G11B5/3954 ,  G11B5/3958 ,  G11B5/397 ,  G11B5/3974 ,  G11B5/3977 ,  G11B5/3987 ,  G11B2005/3996

摘要： A scissor type magnetic sensor for magnetic data recording having a flux closure magnetic side shield structure. The magnetic sensor has a magnetic side shield structure that includes a non-magnetic layer within a magnetic material layer, with the non-magnetic layer being removed from the sensor stack so as to define upper and lower magnetic portions of the magnetic structure that are separated from one another at a region away from the sensor stack. The upper and lower magnetic portions are connected with one another in a region near the sensor stack so as to magnetic flux closure structure. The novel magnetic side shield structure provides net neutral magnetization that does not provide an inadvertent biasing to the magnetic free layers of the magnetic sensor.

公开(公告)号：US20160314807A1

公开(公告)日：2016-10-27

申请号：US15199817

申请日：2016-06-30

申请人： HGST Netherlands B.V.

发明人： Quang Le ,  David J. Seagle

IPC分类号： G11B5/31 ,  G11B5/11

CPC分类号： G11B5/315 ,  G11B5/112 ,  G11B5/39 ,  G11B5/3932 ,  G11B2005/3996

摘要： In one embodiment, a method for forming a sensor includes forming a first free layer, forming a barrier layer above the first free layer, forming a second free layer above the barrier layer, the first free layer, the barrier layer, and the second free layer together forming a scissor sensor stack, forming a soft bias layer behind the scissor sensor stack in an element height direction, the soft bias layer including a soft magnetic material, and forming a hard bias layer, at least a portion thereof being positioned behind the soft bias layer in the element height direction, the hard bias layer including a hard magnetic material having an initialization magnetization that is perpendicular to a media-facing surface of the sensor to provide unidirectional anisotropy to the soft bias layer.

摘要翻译： 在一个实施例中，形成传感器的方法包括形成第一自由层，在第一自由层之上形成阻挡层，在阻挡层上方形成第二自由层，第一自由层，阻挡层和第二自由层 一起形成剪刀传感器堆叠，在元件高度方向上在剪刀传感器堆叠后面形成柔性偏置层，软偏置层包括软磁材料，并形成硬偏压层，其至少一部分位于 柔性偏置层在元件高度方向上，硬偏置层包括具有垂直于传感器的面向介质表面的初始化磁化强度的硬磁性材料，以向柔性偏置层提供单向各向异性。

公开(公告)号：US09472215B1

公开(公告)日：2016-10-18

申请号：US14745282

申请日：2015-06-19

申请人： HGST Netherlands B.V.

发明人： Hongquan Jiang ,  Quang Le ,  Xiaoyong Liu ,  Lei Wang

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G11B5/3932 ,  G11B5/3945 ,  G11B5/398

摘要： According to one embodiment, a magnetic sensor includes a lower scissor free layer, and an upper scissor free layer above the lower scissor free layer in a track direction, where at least one of the scissor free layers has a generally T-shaped periphery. According to another embodiment, a method includes forming a lower scissor free layer, and forming an upper scissor free layer above the lower scissor free layer in a track direction, where at least one of the one of the scissor free layers has a generally T-shaped periphery.

摘要翻译： 根据一个实施例，磁传感器包括下部无剪切层和沿着轨道方向的上部无剪切层上方的上部无剪切层，其中至少一个无剪切层具有大致T形的周边。 根据另一个实施方案，一种方法包括形成下部无剪切层，以及在轨道方向上在所述下部无剪切层之上形成上部无剪切层，其中所述一个所述无剪切层中的至少一个具有大致T- 形外围。

公开(公告)号：US20160055866A1

公开(公告)日：2016-02-25

申请号：US14464418

申请日：2014-08-20

申请人： HGST Netherlands B.V.

发明人： Quang Le ,  David J. Seagle

IPC分类号： G11B5/127 ,  G11B5/31 ,  G01R33/02

CPC分类号： G11B5/315 ,  G11B5/112 ,  G11B5/39 ,  G11B5/3932 ,  G11B2005/3996

摘要： In one embodiment, an apparatus includes a scissor sensor stack, a soft bias layer positioned behind the scissor sensor stack in an element height direction, the soft bias layer including a soft magnetic material, and a hard bias layer, at least a portion thereof being positioned behind the soft bias layer in the element height direction, the hard bias layer including a hard magnetic material having an initialization magnetization that is perpendicular to a media-facing surface of the apparatus to provide unidirectional anisotropy to the soft bias layer, wherein the scissor sensor stack includes a first free layer, a second free layer positioned above the first free layer, and a barrier layer positioned between the first free layer and the second free layer. Other apparatuses and methods for forming such apparatuses are described in more embodiments.

摘要翻译： 在一个实施例中，一种装置包括剪刀传感器堆叠，位于剪刀传感器堆叠后面的元件高度方向的柔性偏置层，软偏置层包括软磁材料，以及硬偏置层，其至少一部分为 位于元件高度方向上的柔性偏置层之后，该硬偏置层包括具有初始化磁化强度的硬磁性材料，该初始化磁化垂直于该装置的面向介质的表面以向该柔性偏置层提供单向各向异性，其中该剪式 传感器堆叠包括第一自由层，位于第一自由层上方的第二自由层以及位于第一自由层和第二自由层之间的阻挡层。 在更多实施例中描述了用于形成这种装置的其它装置和方法。

公开(公告)号：US09053721B1

公开(公告)日：2015-06-09

申请号：US14292760

申请日：2014-05-30

申请人： HGST Netherlands B.V.

发明人： Yongchul Ahn ,  David P. Druist ,  Zheng Gao ,  Ying Hong ,  Yunhe Huang ,  Quang Le ,  Thomas L. Leong ,  Guangli Liu ,  Xiaoyong Liu ,  David J. Seagle

IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： G11B5/398 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996

摘要： A magnetic read sensor having a magnetic seed layer, a pinned layer structure formed over the magnetic seed layer, a non-magnetic barrier or spacer layer formed over the pinned layer structure and a magnetic free layer structure formed over the non-magnetic barrier or spacer layer. The pinned layer has a stripe height (measured from the media facing surface) that is greater than a stripe height of the magnetic free layer structure. In addition, the magnetic seed layer structure has a stripe height (also measured from the media facing surface) that is greater than the stripe height of the magnetic pinned layer structure and the magnetic free layer structure. The stripe height of the magnetic seed layer structure can be controlled independently of the stripe heights of the magnetic pinned layer structure and the magnetic free layer structure.

摘要翻译： 具有磁性种子层的磁性读取传感器，形成在磁性种子层上的钉扎层结构，形成在被钉扎层结构之上的非磁性阻挡层或间隔层以及形成在非磁性屏障或间隔物上的无磁性层结构 层。 被钉扎层具有大于无磁性层结构的条带高度的条带高度（从介质面向表面测量）。 此外，磁性种子层结构具有大于磁性被钉扎层结构和无磁性层结构的条带高度的条纹高度（也从介质面向表面测量）。 可以独立于磁性钉扎层结构和无磁性层结构的条带高度来控制磁性种子层结构的条纹高度。

公开(公告)号：US20150154990A1

公开(公告)日：2015-06-04

申请号：US14094690

申请日：2013-12-02

申请人： HGST Netherlands B.V.

发明人： Hongquan Jiang ,  Quang Le ,  Thao Pham ,  David J. Seagle ,  Hicham M. Sougrati ,  Petrus A. Van Der Heijden

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  G01R33/098 ,  G11B5/39 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T428/1121

摘要： A scissor type magnetic sensor having an improved back edge bias structure. The back edge bias structure extends beyond the sides of the sensor stack for improved bias moment and is formed on a flat topography that provide for improved magnetic biasing. The sensor is formed by a method that includes first defining a sensor width and then depositing a multi-layer insulation layer that includes a dielectric layer that is resistant to ion milling and the depositing a fill layer over the dielectric layer that is removable by ion milling. After the multi-layer insulation layer has been deposited the back edge (i.e. stripe height) of the sensor is formed by masking and ion milling. This ion milling removes portions of the non-magnetic, electrically insulating fill layer that extend beyond the stripe height and beyond the sides of the sensor, leaving the dielectric layer there-beneath.

摘要翻译： 具有改进的后缘偏置结构的剪刀式磁传感器。 后缘偏置结构延伸超过传感器堆叠的侧面以改善偏置力矩，并且形成在提供改进的磁偏置的平坦地形上。 传感器通过一种方法形成，该方法包括首先限定传感器宽度，然后沉积多层绝缘层，该多层绝缘层包括耐离子铣削的电介质层，并且在电介质层上沉积可通过离子铣削移除的填充层 。 在沉积多层绝缘层之后，通过掩模和离子铣削形成传感器的后边缘（即条纹高度）。 这种离子铣去除非磁性，电绝缘的填充层的部分，该部分延伸超过条带高度并超出传感器的侧面，在其下面留下介电层。

公开(公告)号：US20150062751A1

公开(公告)日：2015-03-05

申请号：US14011687

申请日：2013-08-27

申请人： HGST Netherlands B.V.

发明人： Quang Le ,  Simon H. Liao ,  Guangli Liu ,  Kochan Ju ,  Youfeng Zheng

IPC分类号： G11B5/31

CPC分类号： G11B5/3146 ,  G11B5/3163 ,  G11B5/3932 ,  G11B5/398 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/11

摘要： A magnetic sensor having a novel pinning structure resulting in a greatly reduced gap spacing. The sensor has a magnetic free layer structure that extends to a first stripe height and a magnetic pinned layer structure that extends to a second stripe height that is longer than the first stripe high. A layer of anti-ferromagnetic material is formed over the pinned layer structure in the region beyond the first stripe height location. In this way, the antiferromagnetic layer is between the pinned layer and the second or upper shield and does not contribute to gap spacing.

摘要翻译： 具有新型钉扎结构的磁传感器导致间隙间隔大大减小。 传感器具有延伸到第一条纹高度的磁性自由层结构和延伸到长于第一条纹高度的第二条纹高度的磁性固定层结构。 在超过第一条带高度位置的区域中，在钉扎层结构上形成一层反铁磁材料。 以这种方式，反铁磁性层位于被钉扎层和第二或上部屏蔽之间，并且不会造成间隙间隔。

公开(公告)号：US08842395B2

公开(公告)日：2014-09-23

申请号：US13720959

申请日：2012-12-19

申请人： HGST Netherlands B.V.

发明人： Kochan Ju ,  Quang Le ,  Simon H. Liao ,  Guangli Liu

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3932 ,  G11B5/398 ,  H01F10/3268

摘要： A magnetic read sensor having an extended pinned layer structure and also having an extended free layer structure. The extended pinned layer structure and extended free layer structure both extend beyond the strip height of the free layer of the sensor to provide improved pinning strength as well as improved free layer biasing reliability and bias field strength.

摘要翻译： 一种磁读取传感器，具有扩展的钉扎层结构并且还具有延伸的自由层结构。 扩展的钉扎层结构和延伸的自由层结构都延伸超过传感器自由层的条带高度，以提供改善的钉扎强度以及改进的自由层偏置可靠性和偏置场强度。

公开(公告)号：US20140175048A1

公开(公告)日：2014-06-26

申请号：US13725479

申请日：2012-12-21

申请人： HGST NETHERLANDS B.V.

发明人： David P. Druist ,  Quang Le ,  Yang Li ,  David J. Seagle ,  Petrus A. Van Der Heijden

IPC分类号： G11B5/31

CPC分类号： G11B5/3169 ,  G11B5/3166

摘要： A method of manufacturing a magnetic sensor having a hard bias structure located at a back edge of the sensor. The method forms an electrical lapping guide that is compatible for use with such a sensor having a back edge hard bias structure and which can accurately determine a termination point for a lapping operation that forms an air bearing surface of the slider and determines the sensor stripe height.

摘要翻译： 一种制造具有位于传感器后缘的硬偏置结构的磁传感器的方法。 该方法形成电气研磨引导件，其与具有后缘硬偏置结构的这种传感器兼容使用，并且可以精确地确定形成滑块的空气轴承表面的研磨操作的终止点，并且确定传感器条带高度 。