公开(公告)号：US09177575B1

公开(公告)日：2015-11-03

申请号：US14561265

申请日：2014-12-05

申请人： HGST Netherlands B.V.

发明人： Zheng Gao ,  Sangmun Oh ,  Susumu Okamura

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G01R33/098 ,  G11B5/3909 ,  H01L43/08 ,  H01L43/10

摘要： A tunneling magnetoresistive (TMR) read head has a read gap with a reduced thickness. A multilayer seed layer includes a first ferromagnetic seed layer on the lower shield, a ferromagnetic NiFe alloy on the first seed layer, and a third seed layer of Ru or Pt on the NiFe seed layer. The first and NiFe seed layers are magnetically part of the lower shield, thereby effectively reducing the read gap thickness. A free layer/capping layer structure includes a multilayer ferromagnetic free layer and a Hf capping layer on the free layer. The free layer includes a B-containing upper layer in contact with the Hf capping layer prior to annealing. When the sensor is annealed Hf diffuses into the B-containing upper layer, forming an interface layer. The Hf-containing interface layer possesses negative magnetostriction, so the free layer is not required to contain NiFe.

摘要翻译： 隧道磁阻（TMR）读头具有减小厚度的读取间隙。 多层种子层包括下屏蔽上的第一铁磁种子层，第一籽晶层上的铁磁性NiFe合金，以及NiFe种子层上的Ru或Pt的第三晶种层。 第一和NiFe种子层是下屏蔽的磁性部分，从而有效地减小读取间隙厚度。 自由层/覆盖层结构包括多层铁磁自由层和自由层上的Hf覆盖层。 自由层包括在退火之前与Hf覆盖层接触的含B的上层。 当传感器退火时，Hf扩散到含B的上层中，形成界面层。 含Hf的界面层具有负的磁致伸缩，因此自由层不需要含有NiFe。

公开(公告)号：US20170154643A1

公开(公告)日：2017-06-01

申请号：US14956251

申请日：2015-12-01

申请人： HGST Netherlands B.V.

发明人： Kouichi Nishioka ,  Zheng Gao ,  Ching Tsang ,  Quang Le ,  Sangmun Oh

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3945 ,  G11B2005/3996

摘要： A read head is provided with a scissors sensor. The read head may include a bottom magnetic shield, and a first non-magnetic seed layer, a magnetic seed layer, a second non-magnetic seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order. A pair of magnetic side shield layers may be positioned on respective sides of the second free magnetic layer.

公开(公告)号：US20140355152A1

公开(公告)日：2014-12-04

申请号：US13904993

申请日：2013-05-29

申请人： HGST Netherlands B.V.

发明人： Chando Park ,  James M. Freitag ,  Sangmun Oh ,  Zheng Gao

IPC分类号： G11B5/147

CPC分类号： G11B5/1278 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  Y10T428/1193

摘要： In one embodiment, a magnetic head includes a reference layer having magnetic orientation about aligned with a plane of deposition thereof; a first free layer having a magnetic orientation out of a plane of deposition thereof; a spacer layer between the reference layer and the first free layer; a second free layer having a magnetic orientation out of a plane of deposition thereof; and an inserting layer between the first and second free layers.

摘要翻译： 在一个实施例中，磁头包括具有与其沉积平面对准的磁性取向的参考层; 第一自由层，其具有离开其沉积平面的磁性取向; 在所述参考层和所述第一自由层之间的间隔层; 第二自由层，其具有离开其沉积平面的磁性取向; 以及在第一和第二自由层之间的插入层。

公开(公告)号：US09177573B1

公开(公告)日：2015-11-03

申请号：US14701050

申请日：2015-04-30

申请人： HGST Netherlands B.V.

发明人： Sangmun Oh ,  Zheng Gao

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  G01R33/098 ,  G11B5/33 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： A tunneling magnetoresistance (TMR) device has a thin MgO tunneling barrier layer and a free ferromagnetic multilayer. The free ferromagnetic multilayer includes a CoFeB first ferromagnetic layer, a face-centered-cubic (fcc) NiFe compensation layer with negative magnetostriction, and a body-centered-cubic (bcc) NiFe insertion layer between the CoFeB layer and the fcc NiFe compensation layer. An optional ferromagnetic nanolayer may be located between the MgO barrier layer and the CoFeB layer. An optional amorphous separation layer may be located between the CoFeB layer and the bcc NiFe insertion layer. The bcc NiFe insertion layer (and the optional amorphous separation layer if it is used) prevents the fcc NiFe layer from adversely affecting the crystalline formation of the MgO and CoFeB layers during annealing. The bcc NiFe insertion layer also increases the TMR and lowers the Gilbert damping constant of the free ferromagnetic multilayer.

摘要翻译： 隧道磁阻（TMR）器件具有薄的MgO隧道势垒层和自由的铁磁性多层。 自由铁磁性多层包括CoFeB层和fcc NiFe补偿层之间的CoFeB第一铁磁层，具有负磁致伸缩的面心立方（fcc）NiFe补偿层和体心立方（bcc）NiFe插入层 。 可选的铁磁纳米层可以位于MgO阻挡层和CoFeB层之间。 可选的非晶分离层可以位于CoFeB层和bcc NiFe插入层之间。 bcc NiFe插入层（以及任选的非晶分离层，如果使用）防止了fcc NiFe层对退火过程中的MgO和CoFeB层的结晶形成产生不利影响。 bcc NiFe插入层也增加了TMR，降低了自由铁磁多层的吉尔伯特阻尼常数。

公开(公告)号：US08958180B1

公开(公告)日：2015-02-17

申请号：US14012595

申请日：2013-08-28

申请人： HGST Netherlands B.V.

发明人： Chando Park ,  Zheng Gao ,  Sangmun Oh ,  Susumu Okamura ,  James Mac Freitag

IPC分类号： G11B5/39

CPC分类号： G11B5/39 ,  G11B5/3909 ,  G11B5/3912

摘要： Embodiments of the present invention generally relate to a magnetic head having a sensor structure comprising a pinned layer, a spacer layer, a free layer and a capping structure. The free layer has a topmost layer comprising CoB and the capping structure comprises an X layer, where X is an element such as Hf, Zr, Ti, V, Nb, or Ta.

摘要翻译： 本发明的实施例一般涉及具有包括钉扎层，间隔层，自由层和封盖结构的传感器结构的磁头。 自由层具有包含CoB的最上层，并且封盖结构包括X层，其中X是诸如Hf，Zr，Ti，V，Nb或Ta的元素。

公开(公告)号：US08619394B1

公开(公告)日：2013-12-31

申请号：US13689573

申请日：2012-11-29

申请人： HGST Netherlands B.V.

发明人： Chando Park ,  Sangmun Oh ,  Zheng Gao

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B2005/3996

摘要： The present invention generally relates to a magnetic head having a thinner intermixing layer between a barrier layer and a magnetic layer. The method of making the magnetic head is also disclosed. The thinner intermixing layer in the magnetic head is formed by cooling the barrier layer in an atmosphere having a temperature of below 0 degrees Celsius prior to depositing the magnetic layer on the barrier layer. The thinner intermixing layer leads to a sharp interface between the barrier layer and the magnetic layer, which leads to an increased MR.

摘要翻译： 本发明一般涉及在阻挡层和磁性层之间具有较薄的混合层的磁头。 还公开了制造磁头的方法。 在将磁性层沉积在阻挡层上之前，通过在温度低于0摄氏度的气氛中将阻挡层冷却来形成磁头中较薄的混合层。 较薄的混合层导致阻挡层和磁性层之间的尖锐界面，这导致增加的MR。

公开(公告)号：US09940955B2

公开(公告)日：2018-04-10

申请号：US14956251

申请日：2015-12-01

申请人： HGST Netherlands B.V.

发明人： Kouichi Nishioka ,  Zheng Gao ,  Ching Tsang ,  Quang Le ,  Sangmun Oh

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3945 ,  G11B2005/3996

摘要： A read head is provided with a scissors sensor. The read head may include a bottom magnetic shield, and a first non-magnetic seed layer, a magnetic seed layer, a second non-magnetic seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order. A pair of magnetic side shield layers may be positioned on respective sides of the second free magnetic layer.

公开(公告)号：US09337415B1

公开(公告)日：2016-05-10

申请号：US14664644

申请日：2015-03-20

申请人： HGST Netherlands B.V.

发明人： Sangmun Oh ,  Zheng Gao ,  Kochan Ju

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/10

摘要： A magnetic tunnel junction (MTJ) for use in a magnetoresistive random access memory (MRAM) has a CoFeB alloy free layer located between the MgO tunnel barrier layer and an upper MgO capping layer, and a CoFeB alloy enhancement layer between the MgO capping layer and a Ta cap. The CoFeB alloy free layer has high Fe content to induce perpendicular magnetic anisotropy (PMA) at the interfaces with the MgO layers. To avoid creating unnecessary PMA in the enhancement layer due to its interface with the MgO capping layer, the enhancement layer has low Fe content. After all of the layers have been deposited on the substrate, the structure is annealed to crystallize the MgO. The CoFeB alloy enhancement layer inhibits diffusion of Ta from the Ta cap layer into the MgO capping layer and creates good crystallinity of the MgO by providing CoFeB at the MgO interface.

摘要翻译： 用于磁阻随机存取存储器（MRAM）的磁性隧道结（MTJ）具有位于MgO隧道阻挡层和上部MgO覆盖层之间的CoFeB合金自由层，以及MgO覆盖层和 一个塔帽。 CoFeB合金自由层具有高Fe含量，以在与MgO层的界面处诱导垂直磁各向异性（PMA）。 为了避免由于与MgO覆盖层的界面而在增强层中产生不必要的PMA，增强层具有低Fe含量。 在所有层已经沉积在衬底上之后，将结构退火以使MgO结晶。 CoFeB合金增强层抑制Ta从Ta盖层扩散到MgO覆盖层中，并通过在MgO界面处提供CoFeB而产生良好的MgO结晶度。