公开(公告)号：US09318133B2

公开(公告)日：2016-04-19

申请号：US14139762

申请日：2013-12-23

Applicant: HGST Netherlands B.V.

Inventor： James M. Freitag ,  Zheng Gao ,  Chando Park

IPC: G11B5/39 ,  G11B5/31

CPC classification number: G11B5/3909 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T428/1193

Abstract: In one general embodiment, a device includes an antiferromagnetic layer; a first stitch layer exchange coupled with the antiferromagnetic layer, the first stitch layer having a magnetic orientation substantially parallel to a magnetic orientation of the antiferromagnetic layer; a second stitch layer exchange coupled with the first stitch layer and having a magnetic orientation substantially antiparallel to the magnetic orientation of the first stitch layer; a pinned layer structure exchange coupled with the second stitch layer; a free layer; and a spacer layer between the free layer and the pinned layer structure. An end of the antiferromagnetic layer facing a sensing face of the device is recessed from the sensing face.

Abstract translation: 在一个一般实施例中，装置包括反铁磁层; 与所述反铁磁层耦合的第一缝合层交换，所述第一线迹层具有基本上平行于所述反铁磁层的磁取向的磁取向; 与所述第一缝合层耦合并且具有与所述第一缝合层的磁取向基本上反平行的磁取向的第二缝合层交换; 与第二针迹层耦合的被钉扎层结构交换; 自由层 以及在自由层和钉扎层结构之间的间隔层。 面向装置的感测面的反铁磁性层的端部从感测面凹入。

公开(公告)号：US20140355152A1

公开(公告)日：2014-12-04

申请号：US13904993

申请日：2013-05-29

Applicant: HGST Netherlands B.V.

Inventor： Chando Park ,  James M. Freitag ,  Sangmun Oh ,  Zheng Gao

IPC: G11B5/147

CPC classification number: G11B5/1278 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  Y10T428/1193

Abstract: In one embodiment, a magnetic head includes a reference layer having magnetic orientation about aligned with a plane of deposition thereof; a first free layer having a magnetic orientation out of a plane of deposition thereof; a spacer layer between the reference layer and the first free layer; a second free layer having a magnetic orientation out of a plane of deposition thereof; and an inserting layer between the first and second free layers.

Abstract translation: 在一个实施例中，磁头包括具有与其沉积平面对准的磁性取向的参考层; 第一自由层，其具有离开其沉积平面的磁性取向; 在所述参考层和所述第一自由层之间的间隔层; 第二自由层，其具有离开其沉积平面的磁性取向; 以及在第一和第二自由层之间的插入层。

公开(公告)号：US20150179195A1

公开(公告)日：2015-06-25

申请号：US14139762

申请日：2013-12-23

Applicant: HGST Netherlands B.V.

Inventor： James M. Freitag ,  Zheng Gao ,  Chando Park

IPC: G11B5/31

CPC classification number: G11B5/3909 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T428/1193

Abstract: In one general embodiment, a device includes an antiferromagnetic layer; a first stitch layer exchange coupled with the antiferromagnetic layer, the first stitch layer having a magnetic orientation substantially parallel to a magnetic orientation of the antiferromagnetic layer; a second stitch layer exchange coupled with the first stitch layer and having a magnetic orientation substantially antiparallel to the magnetic orientation of the first stitch layer; a pinned layer structure exchange coupled with the second stitch layer; a free layer; and a spacer layer between the free layer and the pinned layer structure. An end of the antiferromagnetic layer facing a sensing face of the device is recessed from the sensing face.

Abstract translation: 在一个一般实施例中，装置包括反铁磁层; 与所述反铁磁层耦合的第一缝合层交换，所述第一线迹层具有基本上平行于所述反铁磁层的磁取向的磁取向; 与所述第一缝合层耦合并且具有与所述第一缝合层的磁取向基本上反平行的磁取向的第二缝合层交换; 与第二针迹层耦合的被钉扎层结构交换; 自由层 以及在自由层和钉扎层结构之间的间隔层。 面向装置的感测面的反铁磁性层的端部从感测面凹入。

公开(公告)号：US08958180B1

公开(公告)日：2015-02-17

申请号：US14012595

申请日：2013-08-28

Applicant: HGST Netherlands B.V.

Inventor： Chando Park ,  Zheng Gao ,  Sangmun Oh ,  Susumu Okamura ,  James Mac Freitag

IPC: G11B5/39

CPC classification number: G11B5/39 ,  G11B5/3909 ,  G11B5/3912

Abstract: Embodiments of the present invention generally relate to a magnetic head having a sensor structure comprising a pinned layer, a spacer layer, a free layer and a capping structure. The free layer has a topmost layer comprising CoB and the capping structure comprises an X layer, where X is an element such as Hf, Zr, Ti, V, Nb, or Ta.

Abstract translation: 本发明的实施例一般涉及具有包括钉扎层，间隔层，自由层和封盖结构的传感器结构的磁头。 自由层具有包含CoB的最上层，并且封盖结构包括X层，其中X是诸如Hf，Zr，Ti，V，Nb或Ta的元素。

公开(公告)号：US08619394B1

公开(公告)日：2013-12-31

申请号：US13689573

申请日：2012-11-29

Applicant: HGST Netherlands B.V.

Inventor： Chando Park ,  Sangmun Oh ,  Zheng Gao

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  G11B2005/3996

Abstract: The present invention generally relates to a magnetic head having a thinner intermixing layer between a barrier layer and a magnetic layer. The method of making the magnetic head is also disclosed. The thinner intermixing layer in the magnetic head is formed by cooling the barrier layer in an atmosphere having a temperature of below 0 degrees Celsius prior to depositing the magnetic layer on the barrier layer. The thinner intermixing layer leads to a sharp interface between the barrier layer and the magnetic layer, which leads to an increased MR.

Abstract translation: 本发明一般涉及在阻挡层和磁性层之间具有较薄的混合层的磁头。 还公开了制造磁头的方法。 在将磁性层沉积在阻挡层上之前，通过在温度低于0摄氏度的气氛中将阻挡层冷却来形成磁头中较薄的混合层。 较薄的混合层导致阻挡层和磁性层之间的尖锐界面，这导致增加的MR。