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公开(公告)号：US09030785B2
公开(公告)日：2015-05-12
申请号：US13923624
申请日：2013-06-21
发明人： James Mac Freitag , Zheng Gao
CPC分类号： G11B5/3143 , G11B5/3906 , G11B5/398 , Y10T428/11 , Y10T428/115 , Y10T428/1193
摘要： The embodiments of the present invention relate to a magnetic read head with pinned layers extending to the ABS of the read head and in contact with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. The recessed antiferromagnetic layer may be disposed above or below the pinned layer structure and provides a pinning field to prevent amplitude flipping in head operation. In these embodiments of the present invention, the read gap of the sensor, that is the distance between the highly permeable, magnetically soft upper and lower shield layers at the ABS, is reduced by the thickness of the antiferromagnetic layer.
摘要翻译： 本发明的实施例涉及一种具有延伸到读取头的ABS并且与相对于读取头的ABS凹陷的反铁磁层接触的固定层的磁读头。 凹陷的反铁磁层可以设置在被钉扎层结构的上方或下方，并提供钉扎场以防止头部操作中的振幅翻转。 在本发明的这些实施例中，传感器的读取间隙，即在ABS处的高度可渗透的，软的软的上下屏蔽层之间的距离减小了反铁磁性层的厚度。
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2.发明授权公开(公告)号：US09099120B1
公开(公告)日：2015-08-04
申请号：US14248970
申请日：2014-04-09
发明人： James Mac Freitag , Zheng Gao
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , G01R33/098 , G11B5/3909 , G11B5/3932 , H01L43/08
摘要： The embodiments generally relate to a read head in a magnetic recording head. The read head utilizes a sensor structure having a pinned magnetic structure with a magnetic field, a barrier layer disposed on top of the pinned magnetic structure, a free layer disposed on top of the barrier layer, and an interlayer coupling field canceling layer disposed on top of the free layer. The interlayer coupling field canceling layer has a cancelling magnetic field pinned anti-parallel the magnetic field of the pinned magnetic structure.
摘要翻译： 实施例一般涉及磁记录头中的读头。 读头使用具有磁场的钉扎磁结构的传感器结构，设置在钉扎磁性结构顶部的阻挡层，设置在阻挡层顶部的自由层和设置在顶部上的层间耦合场消除层 的自由层。 层间耦合场消除层具有消除磁场，与固定磁结构的磁场反并联。
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公开(公告)号：US09001473B1
公开(公告)日：2015-04-07
申请号：US14221375
申请日：2014-03-21
发明人： Zheng Gao , James Mac Freitag , Kuok San Ho , Ching Hwa Tsang , Kochan Ju
CPC分类号： G11B5/3945 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B5/3954 , G11B5/398
摘要： The embodiments disclosed generally relate to a read head in a magnetic recording head. The read head utilizes a sensor structure having: a pinned magnetic structure recessed from a media facing surface; and a reader gap structure. The reader gap structure has a spacer layer recessed from the media facing surface and disposed on top of the pinned magnetic structure, a recessed first free layer partially recessed from the media facing surface and disposed on top of the barrier layer, a second free layer extending to the media facing surface an disposed on top of the barrier layer, and a cap layer extending to the media facing surface disposed atop the second free layer. The pinned magnetic structure, the spacer, and the first free layer have a common face which is on an angle relative to the media facing surface.
摘要翻译： 所公开的实施例一般涉及磁记录头中的读头。 读头利用传感器结构，其具有：从介质面向表面凹陷的固定磁性结构; 和读者差距结构。 读取器间隙结构具有从介质相对表面凹陷并且设置在钉扎磁性结构的顶部上的间隔层，从介质相对表面部分地凹陷并设置在阻挡层的顶部上的凹陷的第一自由层，第二自由层延伸 到位于所述阻挡层顶部上的面向介质的表面，以及延伸到设置在所述第二自由层顶部上的介质对向表面的盖层。 钉扎磁性结构，间隔物和第一自由层具有相对于介质相对表面成一角度的公共面。
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公开(公告)号：US09177588B2
公开(公告)日：2015-11-03
申请号：US14158552
申请日：2014-01-17
发明人： James Mac Freitag , Ying Hong , Cherngye Hwang , Stefan Maat , Masaya Nishioka , David John Seagle , Hicham Moulay Sougrati , Shuxia Wang , Yi Zheng , Honglin Zhu
CPC分类号： G11B5/85 , G11B5/11 , G11B5/3912 , G11B5/398 , G11B5/6082 , G11B5/855 , H01L43/08 , H01L43/12
摘要： The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.
摘要翻译： 本发明的实施例涉及一种用于形成具有延伸到读取头的ABS的固定层的磁性读取头的磁性读取头，并且与相对于读取头的ABS凹陷的反铁磁层磁耦合。 去除反铁磁层的一部分和延伸到ABS的磁性层，露出屏蔽。 屏蔽材料形成在暴露的屏蔽上，并且在屏蔽上形成种子层，并且在剩余的反铁磁性层的一部分上或上方形成种子层。 钉扎层结构形成在种子层和磁性层上。
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公开(公告)号：US09734850B1
公开(公告)日：2017-08-15
申请号：US15195947
申请日：2016-06-28
发明人： Zheng Gao , James Mac Freitag
CPC分类号： G11B5/3909 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
摘要： In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.
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6.发明授权Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion 有权具有MgO隧道势垒层和含氮层的隧道磁阻（TMR）器件，用于最小化硼扩散公开(公告)号：US09099124B1
公开(公告)日：2015-08-04
申请号：US14499218
申请日：2014-09-28
发明人： James Mac Freitag , Zheng Gao
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , G01R33/093 , G01R33/098 , G11B5/39
摘要： A tunneling magnetoresistance (TMR) device, like a magnetic recording disk drive read head, has a nitrogen-containing layer between the MgO barrier layer and the free and/or reference ferromagnetic layers that contain boron. In one embodiment the free ferromagnetic layer includes a boron-containing layer and a trilayer nanolayer structure between the MgO barrier layer and the boron-containing layer. The trilayer nanolayer structure includes a thin Co, Fe or CoFe first nanolayer in contact with the MgO layer, a thin FeN or CoFeN second nanolayer on the first nanolayer and a thin Co, Fe or CoFe third nanolayer on the FeN or CoFeN nanolayer between the FeN or CoFeN nanolayer and the boron-containing layer. If the reference ferromagnetic layer also includes a boron-containing layer then a similar trilayer nanolayer structure may be located between the boron-containing layer and the MgO barrier layer.
摘要翻译： 隧道磁阻（TMR）器件，如磁记录盘驱动器读头，在MgO阻挡层和含有硼的游离和/或参考铁磁层之间具有含氮层。 在一个实施方案中，自由铁磁层包括在MgO阻挡层和含硼层之间的含硼层和三层纳米层结构。 三层纳米层结构包括与MgO层接触的薄Co，Fe或CoFe第一纳米层，第一纳米层上的薄FeN或CoFeN第二纳米层，以及FeN或CoFeN纳米层上的Co，Fe或CoFe薄的第三纳米层 FeN或CoFeN纳米层和含硼层。 如果参考铁磁层还包含含硼层，则可以在含硼层和MgO阻挡层之间设置类似的三层纳米层结构。
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公开(公告)号：US08958180B1
公开(公告)日：2015-02-17
申请号：US14012595
申请日：2013-08-28
发明人： Chando Park , Zheng Gao , Sangmun Oh , Susumu Okamura , James Mac Freitag
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , G11B5/3909 , G11B5/3912
摘要： Embodiments of the present invention generally relate to a magnetic head having a sensor structure comprising a pinned layer, a spacer layer, a free layer and a capping structure. The free layer has a topmost layer comprising CoB and the capping structure comprises an X layer, where X is an element such as Hf, Zr, Ti, V, Nb, or Ta.
摘要翻译： 本发明的实施例一般涉及具有包括钉扎层，间隔层，自由层和封盖结构的传感器结构的磁头。 自由层具有包含CoB的最上层，并且封盖结构包括X层，其中X是诸如Hf，Zr，Ti，V，Nb或Ta的元素。
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