Super shallow laminated hard mask stencil for magnetic read sensor fabrication
    1.
    发明授权
    Super shallow laminated hard mask stencil for magnetic read sensor fabrication 有权
    用于磁读取传感器制造的超浅层压硬掩模模板

    公开(公告)号:US08889019B1

    公开(公告)日:2014-11-18

    申请号:US13907617

    申请日:2013-05-31

    CPC classification number: G11B5/398 G11B5/3163 Y10T29/49032

    Abstract: The present invention generally relates to methods for forming a sensor structure utilizing a shallow and narrow hard mask stencil. In one embodiment, a sensor structure is formed by utilizing a four-layered hard mask stencil. The four-layered hard mask stencil includes a first mask layer, a second mask layer disposed over the first hard mask, a third mask layer disposed over the second mask layer, and a forth mask layer disposed over the third mask layer. In another embodiment, a sensor structure is formed by utilizing a three-layered hard mask stencil. The three-layered hard mask stencil includes a first mask layer, a second mask layer disposed over the first mask layer, and a third mask layer disposed over the second mask layer. The sensor structure is formed with a two-step chemical mechanical planarization (CMP) process.

    Abstract translation: 本发明一般涉及利用浅而窄的硬掩模模板形成传感器结构的方法。 在一个实施例中,通过利用四层硬掩模模板形成传感器结构。 四层硬掩模模板包括第一掩模层,设置在第一硬掩模上的第二掩模层,设置在第二掩模层上的第三掩模层,以及设置在第三掩模层上的第四掩模层。 在另一个实施例中,通过利用三层硬掩模模版形成传感器结构。 三层硬掩模模板包括第一掩模层,设置在第一掩模层上的第二掩模层和设置在第二掩模层上的第三掩模层。 传感器结构由两步化学机械平面化(CMP)工艺形成。

    Recessed IRMN reader process
    2.
    发明授权
    Recessed IRMN reader process 有权
    嵌入式IRMN阅读器流程

    公开(公告)号:US09177588B2

    公开(公告)日:2015-11-03

    申请号:US14158552

    申请日:2014-01-17

    Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.

    Abstract translation: 本发明的实施例涉及一种用于形成具有延伸到读取头的ABS的固定层的磁性读取头的磁性读取头,并且与相对于读取头的ABS凹陷的反铁磁层磁耦合。 去除反铁磁层的一部分和延伸到ABS的磁性层,露出屏蔽。 屏蔽材料形成在暴露的屏蔽上,并且在屏蔽上形成种子层,并且在剩余的反铁磁性层的一部分上或上方形成种子层。 钉扎层结构形成在种子层和磁性层上。

Patent Agency Ranking