Invention Application
- Patent Title: RECESSED ANTIFERROMAGNETIC DESIGN WITH ANTIPARALLEL PINNED STITCH LAYERS FOR IMPROVED PINNING FIELD
- Patent Title (中): 用改进的针刺领域的抗刺激胶粘层的抗皱设计
-
Application No.: US14139762Application Date: 2013-12-23
-
Publication No.: US20150179195A1Publication Date: 2015-06-25
- Inventor: James M. Freitag , Zheng Gao , Chando Park
- Applicant: HGST Netherlands B.V.
- Applicant Address: NL Amsterdam
- Assignee: HGST NETHERLANDS B.V.
- Current Assignee: HGST NETHERLANDS B.V.
- Current Assignee Address: NL Amsterdam
- Main IPC: G11B5/31
- IPC: G11B5/31
Abstract:
In one general embodiment, a device includes an antiferromagnetic layer; a first stitch layer exchange coupled with the antiferromagnetic layer, the first stitch layer having a magnetic orientation substantially parallel to a magnetic orientation of the antiferromagnetic layer; a second stitch layer exchange coupled with the first stitch layer and having a magnetic orientation substantially antiparallel to the magnetic orientation of the first stitch layer; a pinned layer structure exchange coupled with the second stitch layer; a free layer; and a spacer layer between the free layer and the pinned layer structure. An end of the antiferromagnetic layer facing a sensing face of the device is recessed from the sensing face.
Public/Granted literature
- US09318133B2 Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning field Public/Granted day:2016-04-19
Information query
IPC分类:
