Invention Grant
US09337415B1 Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy
有权
具有双MgO界面的垂直自旋转移转矩（STT）存储单元和用于增强垂直磁各向异性的CoFeB层
- Patent Title: Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy
- Patent Title (中): 具有双MgO界面的垂直自旋转移转矩（STT）存储单元和用于增强垂直磁各向异性的CoFeB层
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Application No.: US14664644Application Date: 2015-03-20
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Publication No.: US09337415B1Publication Date: 2016-05-10
- Inventor: Sangmun Oh , Zheng Gao , Kochan Ju
- Applicant: HGST Netherlands B.V.
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agent Thomas R. Berthold
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; H01L43/10 ; G11C11/16
Abstract:
A magnetic tunnel junction (MTJ) for use in a magnetoresistive random access memory (MRAM) has a CoFeB alloy free layer located between the MgO tunnel barrier layer and an upper MgO capping layer, and a CoFeB alloy enhancement layer between the MgO capping layer and a Ta cap. The CoFeB alloy free layer has high Fe content to induce perpendicular magnetic anisotropy (PMA) at the interfaces with the MgO layers. To avoid creating unnecessary PMA in the enhancement layer due to its interface with the MgO capping layer, the enhancement layer has low Fe content. After all of the layers have been deposited on the substrate, the structure is annealed to crystallize the MgO. The CoFeB alloy enhancement layer inhibits diffusion of Ta from the Ta cap layer into the MgO capping layer and creates good crystallinity of the MgO by providing CoFeB at the MgO interface.
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IPC分类:
