Within-Row Wedge Angle Control For Magnetic Recording Read-Write Heads

    公开(公告)号:US20170372729A1

    公开(公告)日:2017-12-28

    申请号:US15190859

    申请日:2016-06-23

    Abstract: A process for lapping a row of head sliders involves fixing the row to a lapping tool fixture, actuating each of multiple force pins to set each head slider for lapping to a respective target wedge angle, and simultaneously lapping accordingly. Each target wedge angle may be achieved by applying a respective torque to a compliant elastomer between each force pin and corresponding head slider, to transfer a pressure gradient corresponding to the torque to the corresponding head slider. Such torques may be applied through at least two wedge angle flexures interconnecting a rotatable box structure and a fixed back wall of a lapping tool, wherein the flexures virtually intersect at and define an axis of rotation about which the torques are applied. The process may further involve actuating each force pin to set each head slider for lapping to a respective reader target stripe height, and simultaneously lapping accordingly.

    Within-row wedge angle control for magnetic recording read-write heads

    公开(公告)号:US09881639B2

    公开(公告)日:2018-01-30

    申请号:US15190859

    申请日:2016-06-23

    Abstract: A process for lapping a row of head sliders involves fixing the row to a lapping tool fixture, actuating each of multiple force pins to set each head slider for lapping to a respective target wedge angle, and simultaneously lapping accordingly. Each target wedge angle may be achieved by applying a respective torque to a compliant elastomer between each force pin and corresponding head slider, to transfer a pressure gradient corresponding to the torque to the corresponding head slider. Such torques may be applied through at least two wedge angle flexures interconnecting a rotatable box structure and a fixed back wall of a lapping tool, wherein the flexures virtually intersect at and define an axis of rotation about which the torques are applied. The process may further involve actuating each force pin to set each head slider for lapping to a respective reader target stripe height, and simultaneously lapping accordingly.

    SCISSOR SENSOR WITH BACK EDGE BIAS STRUCTURE AND NOVEL DIELECTRIC LAYER
    4.
    发明申请
    SCISSOR SENSOR WITH BACK EDGE BIAS STRUCTURE AND NOVEL DIELECTRIC LAYER 有权
    具有后缘偏置结构和新型介质层的分光光度传感器

    公开(公告)号:US20150154990A1

    公开(公告)日:2015-06-04

    申请号:US14094690

    申请日:2013-12-02

    Abstract: A scissor type magnetic sensor having an improved back edge bias structure. The back edge bias structure extends beyond the sides of the sensor stack for improved bias moment and is formed on a flat topography that provide for improved magnetic biasing. The sensor is formed by a method that includes first defining a sensor width and then depositing a multi-layer insulation layer that includes a dielectric layer that is resistant to ion milling and the depositing a fill layer over the dielectric layer that is removable by ion milling. After the multi-layer insulation layer has been deposited the back edge (i.e. stripe height) of the sensor is formed by masking and ion milling. This ion milling removes portions of the non-magnetic, electrically insulating fill layer that extend beyond the stripe height and beyond the sides of the sensor, leaving the dielectric layer there-beneath.

    Abstract translation: 具有改进的后缘偏置结构的剪刀式磁传感器。 后缘偏置结构延伸超过传感器堆叠的侧面以改善偏置力矩,并且形成在提供改进的磁偏置的平坦地形上。 传感器通过一种方法形成,该方法包括首先限定传感器宽度,然后沉积多层绝缘层,该多层绝缘层包括耐离子铣削的电介质层,并且在电介质层上沉积可通过离子铣削移除的填充层 。 在沉积多层绝缘层之后,通过掩模和离子铣削形成传感器的后边缘(即条纹高度)。 这种离子铣去除非磁性,电绝缘的填充层的部分,该部分延伸超过条带高度并超出传感器的侧面,在其下面留下介电层。

    Scissor sensor with back edge bias structure and novel dielectric layer
    5.
    发明授权
    Scissor sensor with back edge bias structure and novel dielectric layer 有权
    具有后缘偏置结构和新颖介电层的剪式传感器

    公开(公告)号:US09099122B2

    公开(公告)日:2015-08-04

    申请号:US14094690

    申请日:2013-12-02

    Abstract: A scissor type magnetic sensor having an improved back edge bias structure. The back edge bias structure extends beyond the sides of the sensor stack for improved bias moment and is formed on a flat topography that provide for improved magnetic biasing. The sensor is formed by a method that includes first defining a sensor width and then depositing a multi-layer insulation layer that includes a dielectric layer that is resistant to ion milling and the depositing a fill layer over the dielectric layer that is removable by ion milling. After the multi-layer insulation layer has been deposited the back edge (i.e. stripe height) of the sensor is formed by masking and ion milling. This ion milling removes portions of the non-magnetic, electrically insulating fill layer that extend beyond the stripe height and beyond the sides of the sensor, leaving the dielectric layer there-beneath.

    Abstract translation: 具有改进的后缘偏置结构的剪刀式磁传感器。 后缘偏置结构延伸超过传感器堆叠的侧面以改善偏置力矩,并且形成在提供改进的磁偏置的平坦地形上。 传感器通过一种方法形成,该方法包括首先限定传感器宽度,然后沉积多层绝缘层,该多层绝缘层包括耐离子铣削的电介质层,并且在电介质层上沉积可通过离子铣削移除的填充层 。 在沉积多层绝缘层之后,通过掩模和离子铣削形成传感器的后边缘(即条纹高度)。 这种离子铣去除非磁性,电绝缘的填充层的部分,该部分延伸超过条带高度并超出传感器的侧面,在其下面留下介电层。

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