Scissor magnetic read head with wrap-around magnetic shield
    1.
    发明授权
    Scissor magnetic read head with wrap-around magnetic shield 有权
    剪刀式磁头读写头带环绕磁屏蔽

    公开(公告)号:US08749926B1

    公开(公告)日:2014-06-10

    申请号:US13691525

    申请日:2012-11-30

    Abstract: A magnetic scissor type magnetic read head having magnetic side shielding for reduced effective track width and having side biasing for improved stability. The read head includes first and magnetic side shields that each include first and second magnetic layers and an anti-parallel exchange coupling layer sandwiched there-between. The magnetic layers of the side shields are anti-parallel coupled with one another such that one of the magnetic layers has its magnetization oriented in a first direction parallel with the air bearing surface and the second magnetic layer has its magnetization oriented in a second direction that is opposite to the first direction and also parallel with the air bearing surface. These magnetizations of the first and second magnetic layers provide a bias field that stabilizes the magnetization of the free magnetic layers of the sensor stack to prevent flipping of the magnetizations of these layers.

    Abstract translation: 一种磁剪刀式磁读头,具有磁性侧屏蔽,减少了有效的磁道宽度,并具有侧偏压以提高稳定性。 读头包括第一和第二磁屏蔽,每个磁屏蔽包括第一和第二磁性层以及夹在其间的反平行交换耦合层。 侧屏蔽的磁层彼此反平行耦合,使得磁层中的一个磁化层在与空气轴承表面平行的第一方向上定向,并且第二磁性层的磁化方向在第二方向上定向, 与第一方向相反并且还与空气轴承表面平行。 第一和第二磁性层的这些磁化提供了一个偏置磁场,其稳定传感器堆叠的自由磁层的磁化,以防止这些层的磁化的翻转。

    Recessed IRMN reader process
    2.
    发明授权
    Recessed IRMN reader process 有权
    嵌入式IRMN阅读器流程

    公开(公告)号:US09177588B2

    公开(公告)日:2015-11-03

    申请号:US14158552

    申请日:2014-01-17

    Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.

    Abstract translation: 本发明的实施例涉及一种用于形成具有延伸到读取头的ABS的固定层的磁性读取头的磁性读取头,并且与相对于读取头的ABS凹陷的反铁磁层磁耦合。 去除反铁磁层的一部分和延伸到ABS的磁性层,露出屏蔽。 屏蔽材料形成在暴露的屏蔽上,并且在屏蔽上形成种子层,并且在剩余的反铁磁性层的一部分上或上方形成种子层。 钉扎层结构形成在种子层和磁性层上。

    LOW RESISTANCE MAGNETIC SENSOR WITH EXTENDED PINNED LAYER STRUCTURE
    3.
    发明申请
    LOW RESISTANCE MAGNETIC SENSOR WITH EXTENDED PINNED LAYER STRUCTURE 审中-公开
    具有扩展的PINNED层结构的低电阻磁传感器

    公开(公告)号:US20150118520A1

    公开(公告)日:2015-04-30

    申请号:US14062789

    申请日:2013-10-24

    Abstract: A magnetic read sensor having improved pinning and reduced area resistance. The sensor has pinned magnetic layer that extends beyond the functional stripe of the sensor to improve magnetic pinning. The free layer has a magnetic portion that extends to the functional stripe height and a non-magnetic portion that extends beyond the functional stripe height. The sensor may have an end point detection layer located between the magnetic pinned layer and the magnetic free layer.

    Abstract translation: 磁读取传感器具有改进的钉扎和减小的面积电阻。 传感器已经固定磁性层,超出传感器的功能条,以改善磁性固定。 自由层具有延伸到功能条纹高度的磁性部分和延伸超出功能条纹高度的非磁性部分。 传感器可以具有位于磁性固定层和无磁性层之间的端点检测层。

    Two-dimensional magnetic recording device with center shield stabilized by recessed AFM layer
    4.
    发明授权
    Two-dimensional magnetic recording device with center shield stabilized by recessed AFM layer 有权
    具有中心屏蔽的二维磁记录装置通过凹陷AFM层稳定

    公开(公告)号:US09570100B1

    公开(公告)日:2017-02-14

    申请号:US14918829

    申请日:2015-10-21

    Abstract: A two-dimensional magnetic recording (TDMR) read head with an antiferromagnetic (AFM) layer recessed behind a center shield. The TDMR read head comprises a first read sensor and a center shield over the first read sensor, wherein the center shield has a first thickness at an air-bearing surface (ABS) and a second thickness at a back surface, the first thickness being greater than the second thickness. A ferromagnetic layer is disposed over a portion of the center shield, wherein the ferromagnetic layer is recessed from the ABS. The TDMR read head also includes an antiferromagnetic layer over the ferromagnetic layer and a second read sensor over the antiferromagnetic layer. By recessing the AFM layer away from the ABS, the down-track spacing between read sensors is reduced, thereby improving TDMR read head performance.

    Abstract translation: 二维磁记录(TDMR)读头与反铁磁(AFM)层在中心屏蔽后面凹陷。 TDMR读取头包括在第一读取传感器上的第一读取传感器和中心屏蔽,其中中心屏蔽在空气轴承表面(ABS)处具有第一厚度,在后表面具有第二厚度,第一厚度更大 比第二厚度。 铁磁层设置在中心屏蔽的一部分上,其中铁磁层从ABS凹入。 TDMR读取头还包括在铁磁层上的反铁磁层和在反铁磁层上的第二读取传感器。 通过使AFM层远离ABS,读取传感器之间的下行轨道间距减小,从而提高TDMR读取头的性能。

    MAGNETIC READ SENSOR WITH BAR SHAPED AFM AND PINNED LAYER STRUCTURE AND SOFT MAGNETIC BIAS ALIGNED WITH FREE LAYER
    5.
    发明申请
    MAGNETIC READ SENSOR WITH BAR SHAPED AFM AND PINNED LAYER STRUCTURE AND SOFT MAGNETIC BIAS ALIGNED WITH FREE LAYER 审中-公开
    磁性读取传感器,带有形状的AFM和PINNED层结构和软磁性偏置与自由层对齐

    公开(公告)号:US20150221328A1

    公开(公告)日:2015-08-06

    申请号:US14170495

    申请日:2014-01-31

    Abstract: A magnetic sensor having a structure that optimizes magnetic pinning strength and magnetic free layer stability. The sensor includes a sensor stack having a magnetic free layer that extends to a first stripe height and a pinned layer that extends beyond the first stripe height to a second stripe height. Magnetic bias structures are formed at the sides of the free layer and are each formed upon a non-magnetic fill layer that raises the bias layer to the level of the free layer, the non-magnetic fill layer being at the level of the pinned layer in the sensor stack. The fill layer allows the free layer stripe height to be defined in a partial mill process while allowing the pinned layer to extend beyond the free layer stripe height and also advantageously allows the bias layers to have a stripe height that is aligned with the free layer stripe height.

    Abstract translation: 具有优化磁性钉扎强度和磁自由层稳定性的结构的磁传感器。 传感器包括具有延伸到第一条带高度的无磁性层和延伸超过第一条纹高度至第二条纹高度的钉扎层的传感器堆叠。 磁偏置结构形成在自由层的侧面,并且各自形成在非磁性填充层上,该非磁性填充层将偏置层升高到自由层的高度,非磁性填充层处于被钉扎层的水平 在传感器堆栈中。 填充层允许在部分研磨过程中限定自由层条纹高度,同时允许钉扎层延伸超过自由层条纹高度,并且还有利地允许偏置层具有与自由层条纹对准的条纹高度 高度。

    WAFER CLAMP FOR CONTROLLING WAFER BOWING AND FILM STRESS
    6.
    发明申请
    WAFER CLAMP FOR CONTROLLING WAFER BOWING AND FILM STRESS 审中-公开
    用于控制波浪和薄膜应力的波形夹

    公开(公告)号:US20150235892A1

    公开(公告)日:2015-08-20

    申请号:US14183291

    申请日:2014-02-18

    Abstract: A wafer clamp according to one embodiment includes an outer ring, and at least three members extending inwardly from the outer ring, each of the members having a contact area for engaging a wafer. A system includes a structure having at least one ring, each ring being for receiving a wafer, and a wafer clamp configured to clamp a wafer to each ring, the wafer clamp having an outer ring, and at least three members extending inwardly from the outer ring, each of the members having a contact area for engaging a wafer.

    Abstract translation: 根据一个实施例的晶片夹具包括外环,以及从外环向内延伸的至少三个构件,每个构件具有用于接合晶片的接触区域。 一种系统包括具有至少一个环的结构,每个环用于接收晶片,以及晶片夹,其构造成将晶片夹持到每个环,所述晶片夹具具有外环,以及至少三个从外部向内延伸的构件 每个构件具有用于接合晶片的接触区域。

    SCISSOR MAGNETIC READ HEAD WITH WRAP-AROUND MAGNETIC SHIELD
    7.
    发明申请
    SCISSOR MAGNETIC READ HEAD WITH WRAP-AROUND MAGNETIC SHIELD 有权
    SCISSOR磁头读取头带缠绕磁屏蔽

    公开(公告)号:US20140153138A1

    公开(公告)日:2014-06-05

    申请号:US13691525

    申请日:2012-11-30

    Abstract: A magnetic scissor type magnetic read head having magnetic side shielding for reduced effective track width and having side biasing for improved stability. The read head includes first and magnetic side shields that each include first and second magnetic layers and an anti-parallel exchange coupling layer sandwiched there-between. The magnetic layers of the side shields are anti-parallel coupled with one another such that one of the magnetic layers has its magnetization oriented in a first direction parallel with the air bearing surface and the second magnetic layer has its magnetization oriented in a second direction that is opposite to the first direction and also parallel with the air bearing surface. These magnetizations of the first and second magnetic layers provide a bias field that stabilizes the magnetization of the free magnetic layers of the sensor stack to prevent flipping of the magnetizations of these layers.

    Abstract translation: 一种磁剪刀式磁读头,具有磁性侧屏蔽,减少了有效的磁道宽度,并具有侧偏压以提高稳定性。 读头包括第一和第二磁屏蔽,每个磁屏蔽包括第一和第二磁性层以及夹在其间的反平行交换耦合层。 侧屏蔽的磁层彼此反平行耦合,使得磁层中的一个磁化层在与空气轴承表面平行的第一方向上定向,并且第二磁性层的磁化方向在第二方向上定向, 与第一方向相反并且还与空气轴承表面平行。 第一和第二磁性层的这些磁化提供了一个偏置磁场,其稳定传感器堆叠的自由磁层的磁化,以防止这些层的磁化的翻转。

    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with hard magnet biasing structure having a MgO insulating layer
    8.
    发明授权
    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with hard magnet biasing structure having a MgO insulating layer 有权
    具有具有MgO绝缘层的具有硬磁体偏置结构的电流垂直于平面(CPP)磁阻(MR)传感器

    公开(公告)号:US08670218B1

    公开(公告)日:2014-03-11

    申请号:US13688051

    申请日:2012-11-28

    Abstract: A hard magnet biasing structure for a CPP-GMR or CPP-TMR read head for a magnetic recording disk drive is located between the two sensor shields and abutting the side edges of the sensor free layer. The biasing structure includes a crystalline MgO insulating layer on the lower shield and the side edges of the free layer, a seed layer of either Ir or Ru on and in contact with the MgO layer, a layer of at least partially chemically-ordered ferromagnetic FePt alloy hard bias layer on the seed layer, and a capping layer on the FePt alloy hard bias layer. The MgO layer may be a single layer on and in contact with the side edges of the free layer, or an upper layer on and in contact with a base insulating layer selected from an aluminum oxide, a tantalum oxide, a titanium oxide, and a silicon nitride.

    Abstract translation: 用于磁记录盘驱动器的CPP-GMR或CPP-TMR读取头的硬磁体偏置结构位于两个传感器屏蔽之间并邻接传感器自由层的侧边缘。 偏压结构包括在下屏蔽上的结晶MgO绝缘层和自由层的侧边缘,在与MgO层接触并接触的层之间的Ir或Ru的种子层,至少部分化学排列的铁磁FePt层 种子层上的合金硬偏置层,以及FePt合金硬偏压层上的覆盖层。 MgO层可以是与自由层的侧边缘接触并与之接触的单层,或者与选自氧化铝,氧化钽,氧化钛和基底绝缘层中的基底绝缘层接触的上层 氮化硅。

    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having a top shield with an antiparallel structure
    9.
    发明授权
    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having a top shield with an antiparallel structure 有权
    电流垂直于平面(CPP)磁阻(MR)传感器具有具有反平行结构的顶部屏蔽

    公开(公告)号:US08638530B1

    公开(公告)日:2014-01-28

    申请号:US13771486

    申请日:2013-02-20

    CPC classification number: G11B5/3912 B82Y10/00 G11B2005/3996

    Abstract: A current-perpendicular-to-the-plane magnetoresistive sensor structure includes at least an improved top shield structure and optionally also a similar bottom shield structure. The top shield structure includes an antiparallel structure (APS) of two ferromagnetic films and a nonmagnetic antiparallel coupling (APC) film between them. The APC film induces antiferromagnetic (AF) coupling between the two ferromagnetic films so that they have their respective magnetizations oriented antiparallel. An important aspect of the APS is that there is no antiferromagnetic layer adjacent the upper ferromagnetic film, so that the upper ferromagnetic film does not have its magnetization pinned by an antiferromagnetic layer. An electroplated shield layer is formed above the APS. A nonmagnetic decoupling layer is located between the APS and the electroplated shield layer to prevent domain wall movement in the electroplated shield from transferring to the ferromagnetic layers in the APS and thus possibly induce noise in the sensor.

    Abstract translation: 电流 - 垂直于平面的磁阻传感器结构至少包括改进的顶部屏蔽结构和任选地也类似的底部屏蔽结构。 顶部屏蔽结构包括两个铁磁膜的反平行结构(APS)和它们之间的非磁性反平行耦合(APC)膜。 APC膜在两个铁磁膜之间引起反铁磁(AF)耦合,使得它们各自的磁化反平行取向。 APS的一个重要方面是在上铁磁膜附近没有反铁磁层,使得上铁磁膜不具有被反铁磁层固定的磁化。 在APS上方形成电镀屏蔽层。 非磁性解耦层位于APS和电镀屏蔽层之间,以防止电镀屏蔽层中的畴壁运动转移到APS中的铁磁层,从而可能导致传感器中的噪声。

    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and improved center shield
    10.
    发明授权
    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and improved center shield 有权
    具有多个堆叠传感器和改进的中心屏蔽的电流垂直平面(CPP)磁阻(MR)传感器结构

    公开(公告)号:US09042059B1

    公开(公告)日:2015-05-26

    申请号:US14277978

    申请日:2014-05-15

    Abstract: A two-dimensional magnetic recording (TDMR) read head has upper and lower read sensors wherein the lower read sensor has its magnetization biased by side shields of soft magnetic material. The center shield between the lower and upper sensors may be an antiparallel structure (APS) with two ferromagnetic layers separated by an antiparallel coupling (APC) layer. The center shield has a central region and two side regions, but there is no antiferromagnetic (AF) layer in the central region. Instead the two side regions of the upper ferromagnetic layer in the APS are pinned by AF tab layers that are electrically isolated from the upper sensor. The upper ferromagnetic layer and the APC layer in the APS may also be located only in the side regions. The thickness of the center shield can thus be made thinner, which reduces the free layer to free layer spacing.

    Abstract translation: 二维磁记录(TDMR)读头具有上和下读传感器,其中下读传感器具有由软磁材料的侧屏偏压的磁化。 下传感器和上传感器之间的中心屏蔽可能是具有由反平行耦合(APC)层隔开的两个铁磁层的反并联结构(APS)。 中心屏蔽具有中心区域和两个侧面区域,但在中心区域中没有反铁磁(AF)层。 相反,APS中的上铁磁层的两侧区域被与上传感器电隔离的AF贴片层固定。 APS中的上铁磁层和APC层也可以仅位于侧区域中。 因此,中心屏蔽层的厚度可以变得更薄,这将自由层减小到自由层间距。

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