Invention Application
US20150118520A1 LOW RESISTANCE MAGNETIC SENSOR WITH EXTENDED PINNED LAYER STRUCTURE
审中-公开
具有扩展的PINNED层结构的低电阻磁传感器
- Patent Title: LOW RESISTANCE MAGNETIC SENSOR WITH EXTENDED PINNED LAYER STRUCTURE
- Patent Title (中): 具有扩展的PINNED层结构的低电阻磁传感器
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Application No.: US14062789Application Date: 2013-10-24
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Publication No.: US20150118520A1Publication Date: 2015-04-30
- Inventor: Yongchul Ahn , Xiaozhong Dang , Cherngye Hwang , Quang Le , Simon H. Liao , Guangli Liu , Stefan Maat
- Applicant: HGST Netherlands B.V.
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/31
Abstract:
A magnetic read sensor having improved pinning and reduced area resistance. The sensor has pinned magnetic layer that extends beyond the functional stripe of the sensor to improve magnetic pinning. The free layer has a magnetic portion that extends to the functional stripe height and a non-magnetic portion that extends beyond the functional stripe height. The sensor may have an end point detection layer located between the magnetic pinned layer and the magnetic free layer.
Information query
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