公开(公告)号：US10763252B2

公开(公告)日：2020-09-01

申请号：US15883537

申请日：2018-01-30

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Akio Yamano ,  Misaki Takahashi

IPC: H01L27/06 ,  H01L29/739 ,  H01L29/861 ,  H01L29/40 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08 ,  H01L27/07 ,  H01L29/36 ,  H01L29/45

Abstract: A semiconductor device including a semiconductor substrate and a plurality of trench structures formed on the semiconductor substrate. The semiconductor substrate includes a first element region for forming an insulated gate bipolar transistor therein, and a second element region for forming a diode therein, the semiconductor substrate constituting a drift layer. The plurality of trench structures includes a plurality of gate trench structures provided on a front surface side of the first element region, each gate trench structure having an electrode provided therein that is based on a gate potential, and a plurality of floating trench structures provided on a front surface side of the second element region, each floating trench structure having an electrode provided therein that has a floating potential.

公开(公告)号：US10468254B2

公开(公告)日：2019-11-05

申请号：US15688892

申请日：2017-08-29

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hiroshi Takishita ,  Takashi Yoshimura ,  Takahiro Tamura ,  Yuichi Onozawa ,  Akio Yamano

IPC: H01L21/265 ,  H01L29/861 ,  H01L21/8222 ,  H01L27/06 ,  H01L21/263 ,  H01L29/32 ,  H01L29/36 ,  H01L29/739

Abstract: Provided is a semiconductor device including: a semiconductor substrate doped with an impurity; a front-surface-side electrode provided at a side of a front surface of the semiconductor substrate; and a back-surface-side electrode provided at a side of a back surface of the semiconductor substrate; wherein the semiconductor substrate includes: a peak region arranged at the side of the back surface of the semiconductor substrate and having one or more peaks of an impurity concentration; a high concentration region arranged closer to the front surface than the peak region and having an impurity concentration more gently sloped than the one or more peaks; and a low concentration region arranged closer to the front surface than the high concentration region and having an impurity concentration lower than the impurity concentration of the high concentration region and a substrate concentration of the semiconductor substrate.

公开(公告)号：US10304928B2

公开(公告)日：2019-05-28

申请号：US15607696

申请日：2017-05-30

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Takahiro Tamura ,  Yuichi Onozawa ,  Takashi Yoshimura ,  Hiroshi Takishita ,  Akio Yamano

IPC: H01L29/08 ,  H01L21/263 ,  H01L21/265 ,  H01L21/322 ,  H01L29/739 ,  H01L29/12 ,  H01L21/225 ,  H01L21/266 ,  H01L21/324 ,  H01L27/06 ,  H01L29/10 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66 ,  H01L29/861

Abstract: Provided is a semiconductor device including a semiconductor substrate doped with impurities, a front surface-side electrode provided on a front surface side of the semiconductor substrate, a back surface-side electrode provided on a back surface side of the semiconductor substrate, wherein the semiconductor substrate has a peak region arranged on the back surface side of the semiconductor substrate and having one or more peaks of impurity concentration, a high concentration region arranged closer to the front surface than the peak region and having a gentler impurity concentration than the one or more peaks, and a low concentration region arranged closer to the front surface than the high concentration region and having a lower impurity concentration than the high concentration region.

公开(公告)号：US10672762B2

公开(公告)日：2020-06-02

申请号：US16429086

申请日：2019-06-03

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Akio Yamano ,  Aiko Takasaki ,  Hiroaki Ichikawa

IPC: H01L27/07 ,  H01L23/522 ,  H01L23/00 ,  H01L29/66 ,  H01L29/739 ,  H01L29/861 ,  H01L29/78 ,  H01L21/3205 ,  H01L29/417 ,  H01L21/768 ,  H01L27/06 ,  H01L21/8234

Abstract: A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.

公开(公告)号：USD884662S1

公开(公告)日：2020-05-19

申请号：US29669336

申请日：2018-11-07

Applicant: FUJI ELECTRIC CO., LTD.

Designer： Taichi Itoh ,  Hiroaki Ichikawa ,  Mitsuhiro Kakefu ,  Akio Yamano ,  Takuya Yamamoto

公开(公告)号：US11335772B2

公开(公告)日：2022-05-17

申请号：US16997886

申请日：2020-08-19

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Takahiro Tamura ,  Yuichi Onozawa ,  Takashi Yoshimura ,  Hiroshi Takishita ,  Akio Yamano

IPC: H01L29/08 ,  H01L29/739 ,  H01L29/12 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66 ,  H01L29/861 ,  H01L27/07 ,  H01L21/265 ,  H01L29/40 ,  H01L21/225 ,  H01L21/266 ,  H01L21/324 ,  H01L27/06 ,  H01L29/10 ,  H01L21/263 ,  H01L21/322

Abstract: Provided is a semiconductor device including a semiconductor substrate doped with impurities, a front surface-side electrode provided on a front surface side of the semiconductor substrate, a back surface-side electrode provided on a back surface side of the semiconductor substrate, wherein the semiconductor substrate has a peak region arranged on the back surface side of the semiconductor substrate and having one or more peaks of impurity concentration, a high concentration region arranged closer to the front surface than the peak region and having a gentler impurity concentration than the one or more peaks, and a low concentration region arranged closer to the front surface than the high concentration region and having a lower impurity concentration than the high concentration region.

公开(公告)号：US10950446B2

公开(公告)日：2021-03-16

申请号：US16660836

申请日：2019-10-23

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hiroshi Takishita ,  Takashi Yoshimura ,  Takahiro Tamura ,  Yuichi Onozawa ,  Akio Yamano

IPC: H01L21/265 ,  H01L29/861 ,  H01L21/263 ,  H01L29/32 ,  H01L29/739 ,  H01L29/36 ,  H01L21/8222 ,  H01L27/06

Abstract: Provided is a semiconductor device including: a semiconductor substrate doped with an impurity; a front-surface-side electrode provided at a side of a front surface of the semiconductor substrate; and a back-surface-side electrode provided at a side of a back surface of the semiconductor substrate; wherein the semiconductor substrate includes: a peak region arranged at the side of the back surface of the semiconductor substrate and having one or more peaks of an impurity concentration; a high concentration region arranged closer to the front surface than the peak region and having an impurity concentration more gently sloped than the one or more peaks; and a low concentration region arranged closer to the front surface than the high concentration region and having an impurity concentration lower than the impurity concentration of the high concentration region and a substrate concentration of the semiconductor substrate.

公开(公告)号：US10756182B2

公开(公告)日：2020-08-25

申请号：US16358705

申请日：2019-03-20

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Takahiro Tamura ,  Yuichi Onozawa ,  Takashi Yoshimura ,  Hiroshi Takishita ,  Akio Yamano

IPC: H01L29/08 ,  H01L29/739 ,  H01L29/12 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66 ,  H01L29/861 ,  H01L27/07 ,  H01L21/265 ,  H01L29/40 ,  H01L21/225 ,  H01L21/266 ,  H01L21/324 ,  H01L27/06 ,  H01L29/10 ,  H01L21/263 ,  H01L21/322

Abstract: Provided is a semiconductor device including a semiconductor substrate doped with impurities, a front surface-side electrode provided on a front surface side of the semiconductor substrate, a back surface-side electrode provided on a back surface side of the semiconductor substrate, wherein the semiconductor substrate has a peak region arranged on the back surface side of the semiconductor substrate and having one or more peaks of impurity concentration, a high concentration region arranged closer to the front surface than the peak region and having a gentler impurity concentration than the one or more peaks, and a low concentration region arranged closer to the front surface than the high concentration region and having a lower impurity concentration than the high concentration region.