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公开(公告)号：US10910434B2
公开(公告)日：2021-02-02
申请号：US16870099
申请日：2020-05-08
发明人： Jijun Sun , Sanjeev Aggarwal , Han-Jong Chia , Jon M. Slaughter , Renu Whig
摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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公开(公告)号：US10825500B2
公开(公告)日：2020-11-03
申请号：US16286793
申请日：2019-02-27
发明人： Han-Jong Chia , Sumio Ikegawa , Michael Tran , Jon Slaughter
摘要： A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, where an unbalanced SAF that includes ferromagnetic layers having different magnetic moments is used to lower the switching barrier for the SAF and allow for writing data values to the SAF using lower currents and magnetic fields than would be required for a balanced SAF.
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公开(公告)号：US10483320B2
公开(公告)日：2019-11-19
申请号：US16195178
申请日：2018-11-19
发明人： Jijun Sun , Sanjeev Aggarwal , Han-Jong Chia , Jon M. Slaughter , Renu Whig
摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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公开(公告)号：US20180182443A1
公开(公告)日：2018-06-28
申请号：US15851816
申请日：2017-12-22
发明人： Han-Jong Chia , Sumio Ikegawa , Michael Tran , Jon Slaughter
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/5607 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, where an unbalanced SAF that includes ferromagnetic layers having different magnetic moments is used to lower the switching barrier for the SAF and allow for writing data values to the SAF using lower currents and magnetic fields than would be required for a balanced SAF.
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公开(公告)号：US11944015B2
公开(公告)日：2024-03-26
申请号：US17659506
申请日：2022-04-18
发明人： Han-Jong Chia
CPC分类号： H10N50/80 , G11C11/161 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01F10/329 , H10B61/22 , H10N50/85
摘要： Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT segments injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction in order to improve the efficiency of the switching current applied to the magnetoresistive device.
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公开(公告)号：US11937436B2
公开(公告)日：2024-03-19
申请号：US17285122
申请日：2019-10-29
发明人： Jijun Sun , Han-Jong Chia , Sarin Deshpande , Ahmet Demiray
CPC分类号： H10B61/10 , H10B61/00 , H10B61/20 , H10N30/50 , H10N35/80 , H10N50/10 , H10N50/80 , H10N50/85
摘要： A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or mom dielectric layers. The fixed magnetic region may include a first ferromagnetic region, a coupling layer, a second ferromagnetic region, a transition layer disposed, a reference layer, and at least one interfacial layer disposed above the second ferromagnetic region. Another interfacial layer may be disposed between the one or more dielectric layers and the free magnetic region.
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公开(公告)号：US11690229B2
公开(公告)日：2023-06-27
申请号：US17131926
申请日：2020-12-23
发明人： Jijun Sun , Sanjeev Aggarwal , Han-Jong Chia , Jon M. Slaughter , Renu Whig
CPC分类号： H01L27/222 , G11B5/3909 , G11C11/1673 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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公开(公告)号：US11342497B2
公开(公告)日：2022-05-24
申请号：US17165092
申请日：2021-02-02
发明人： Han-Jong Chia
摘要： Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT segments injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction in order to improve the efficiency of the switching current applied to the magnetoresistive device.
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公开(公告)号：US10937948B2
公开(公告)日：2021-03-02
申请号：US16806533
申请日：2020-03-02
发明人： Han-Jong Chia
摘要： Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT segments injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction in order to improve the efficiency of the switching current applied to the magnetoresistive device.
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公开(公告)号：US12089418B2
公开(公告)日：2024-09-10
申请号：US18185725
申请日：2023-03-17
发明人： Jijun Sun , Sanjeev Aggarwal , Han-Jong Chia , Jon M. Slaughter , Renu Whig
CPC分类号： H10B61/00 , G11B5/3909 , G11C11/1673 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85
摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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