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1.发明授权公开(公告)号：US11139429B2
公开(公告)日：2021-10-05
申请号：US16794449
申请日：2020-02-19
发明人： Sanjeev Aggarwal , Kerry Nagel , Jason Janesky
摘要： A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least one encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes. For example, an exemplary method of manufacturing a magnetoresistive device includes etching through a second electrode, second dielectric layer and free magnetic layer to provide a sidewall of (i) an unpinned synthetic antiferromagnetic structure, (ii) a second dielectric layer and (iii) a free magnetic layer; thereafter, forming an encapsulation material on the sidewall of the unpinned synthetic antiferromagnetic structure, second dielectric layer and free magnetic layer, and after forming the encapsulation material, etching through a first dielectric layer.
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公开(公告)号：US11043630B2
公开(公告)日：2021-06-22
申请号：US16695396
申请日：2019-11-26
IPC分类号： H01L43/04 , H01L21/3065 , H01L43/14
摘要： A magnetoresistive device may include an intermediate region positioned between a magnetically fixed region and a magnetically free region, and spin Hall channel region extending around a sidewall of at least the magnetically free region. An insulator region may extend around a portion of the sidewall such that the insulator region contacts a first portion of the sidewall and the spin Hall channel region contacts a second portion of the sidewall.
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公开(公告)号：US10910434B2
公开(公告)日：2021-02-02
申请号：US16870099
申请日：2020-05-08
发明人： Jijun Sun , Sanjeev Aggarwal , Han-Jong Chia , Jon M. Slaughter , Renu Whig
摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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4.发明授权公开(公告)号：US10608172B2
公开(公告)日：2020-03-31
申请号：US16255912
申请日：2019-01-24
发明人： Sanjeev Aggarwal , Kerry Nagel , Jason Janesky
摘要： A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least one encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes. For example, an exemplary method of manufacturing a magnetoresistive device includes etching through a second electrode, second dielectric layer and free magnetic layer to provide a sidewall of (i) an unpinned synthetic antiferromagnetic structure, (ii) a second dielectric layer and (iii) a free magnetic layer; thereafter, forming an encapsulation material on the sidewall of the unpinned synthetic antiferromagnetic structure, second dielectric layer and free magnetic layer, and after forming the encapsulation material, etching through a first dielectric layer.
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公开(公告)号：US10483320B2
公开(公告)日：2019-11-19
申请号：US16195178
申请日：2018-11-19
发明人： Jijun Sun , Sanjeev Aggarwal , Han-Jong Chia , Jon M. Slaughter , Renu Whig
摘要： A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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公开(公告)号：US10461250B2
公开(公告)日：2019-10-29
申请号：US16050749
申请日：2018-07-31
摘要： A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
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公开(公告)号：US10056544B2
公开(公告)日：2018-08-21
申请号：US15638757
申请日：2017-06-30
CPC分类号： H01L43/12 , G11B5/3163 , G11C11/161 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , Y10T29/49021
摘要： Methods for manufacturing magnetoresistive devices are presented in which isolation of magnetic layers in the magnetoresistive stack is achieved by oxidizing exposed sidewalls of the magnetic layers and then depositing additional encapsulating material prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.
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公开(公告)号：US20180130944A1
公开(公告)日：2018-05-10
申请号：US15860914
申请日：2018-01-03
发明人： Renu Whig , Phillip Mather , Kenneth Smith , Sanjeev Aggarwal , Jon Slaughter , Nicholas Rizzo
CPC分类号： H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
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9.发明申请公开(公告)号：US20170148980A1
公开(公告)日：2017-05-25
申请号：US15396700
申请日：2017-01-02
发明人： Sanjeev Aggarwal , Kerry Nagel , Jason Janesky
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least one encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes.
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10.发明授权Magnetoresistive structure having two dielectric layers, and method of manufacturing same 有权具有两个电介质层的磁阻结构及其制造方法公开(公告)号：US09548442B2
公开(公告)日：2017-01-17
申请号：US14797172
申请日：2015-07-12
发明人： Sanjeev Aggarwal , Kerry Nagel , Jason Janesky
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least an encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes.
摘要翻译： 具有两个电介质层的磁阻结构及其制造方法包括位于两个电介质层之间的自由磁性层。 制造方法包括至少两个蚀刻工艺和至少一个介于其间的封装工艺，其中在蚀刻工艺之间形成在部分形成的磁阻堆叠的侧壁上的封装。
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