公开(公告)号：US11678584B2

公开(公告)日：2023-06-13

申请号：US17245882

申请日：2021-04-30

申请人： EVERSPIN TECHNOLOGIES, INC.

发明人： Renu Whig ,  Phillip Mather ,  Kenneth Smith ,  Sanjeev Aggarwal ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： H10N50/01 ,  B82Y25/00 ,  G01R33/00 ,  G01R33/09 ,  H10B61/00 ,  H10N59/00 ,  H10N50/10 ,  H10N50/80

CPC分类号： H10N50/01 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N59/00

摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

公开(公告)号：US09269891B2

公开(公告)日：2016-02-23

申请号：US13972637

申请日：2013-08-21

申请人： EverSpin Technologies, Inc.

发明人： Renu Whig ,  Philip Mather ,  Kenneth Smith ,  Sanjeev Aggarwal ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： H01L43/12 ,  B82Y25/00 ,  G01R33/00 ,  G01R33/09 ,  H01L27/22

CPC分类号： H01L43/12 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

摘要翻译： 半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。 该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。

公开(公告)号：US20150236254A1

公开(公告)日：2015-08-20

申请号：US14704915

申请日：2015-05-05

申请人： Everspin Technologies, Inc.

发明人： Kerry Joseph Nagel ,  Kenneth Smith ,  Moazzem Hossain ,  Sanjeev Aggarwal

IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3213 ,  H01L43/02 ,  H01L27/22

CPC分类号： H01L43/12 ,  H01L21/28568 ,  H01L21/32133 ,  H01L21/76819 ,  H01L21/7684 ,  H01L21/76877 ,  H01L27/222 ,  H01L27/226 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： A conductive via disposed beneath a magnetic device and aligned therewith. In certain embodiments, an electrode formed on the conductive via may be polished to eliminate step functions or seams originating at the conductive via from propagating up through the various deposited layers. This integration approach allows for improved scaling of the MRAM devices to, for example, a 45 nanometer node.

摘要翻译： 导电通孔，其设置在磁性装置的下方并与其对准。 在某些实施例中，形成在导电通孔上的电极可以被抛光以消除起始于导电通孔的步骤功能或接缝，以向上传播通过各种沉积层。 该集成方法允许将MRAM设备改进为例如45纳米节点。

公开(公告)号：US20180130944A1

公开(公告)日：2018-05-10

申请号：US15860914

申请日：2018-01-03

申请人： EVERSPIN TECHNOLOGIES, INC.

发明人： Renu Whig ,  Phillip Mather ,  Kenneth Smith ,  Sanjeev Aggarwal ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： H01L43/12 ,  G01R33/00 ,  G01R33/09 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/12 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

公开(公告)号：US09525129B2

公开(公告)日：2016-12-20

申请号：US15142721

申请日：2016-04-29

申请人： EVERSPIN TECHNOLOGIES, INC.

发明人： Renu Whig ,  Phillip Mather ,  Kenneth Smith ,  Sanjeev Aggarwal ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： H01L43/12 ,  H01L27/22 ,  G01R33/02 ,  B82Y25/00 ,  G01R33/00 ,  G01R33/09 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/12 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

公开(公告)号：US20140138346A1

公开(公告)日：2014-05-22

申请号：US13972637

申请日：2013-08-21

申请人： EverSpin Technologies, Inc.

发明人： Renu Whig ,  Philip Mather ,  Kenneth Smith ,  Sanjeev Aggarwal ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： H01L43/12 ,  G01R33/09

CPC分类号： H01L43/12 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

摘要翻译： 半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。 该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。

公开(公告)号：US09893274B2

公开(公告)日：2018-02-13

申请号：US15388650

申请日：2016-12-22

申请人： EVERSPIN TECHNOLOGIES, INC.

发明人： Renu Whig ,  Phillip Mather ,  Kenneth Smith ,  Sanjeev Aggarwal ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22 ,  G01R33/09 ,  G01R33/00

CPC分类号： H01L43/12 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

公开(公告)号：US09553261B2

公开(公告)日：2017-01-24

申请号：US15145515

申请日：2016-05-03

申请人： EVERSPIN TECHNOLOGIES, INC.

发明人： Renu Whig ,  Phillip Mather ,  Kenneth Smith ,  Sanjeev Aggarwal ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： H01L43/12 ,  H01L27/10 ,  H01L27/22 ,  H01L41/06 ,  G01R33/02 ,  B82Y25/00 ,  G01R33/00 ,  G01R33/09 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/12 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

摘要翻译： 半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。 该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。

公开(公告)号：US11631806B2

公开(公告)日：2023-04-18

申请号：US17317061

申请日：2021-05-11

申请人： Everspin Technologies, Inc.

发明人： Kerry Joseph Nagel ,  Kenneth Smith ,  Moazzem Hossain ,  Sanjeev Aggarwal

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L21/768 ,  H01L21/285 ,  H01L21/3213 ,  H01L43/02

摘要： A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.

公开(公告)号：US11024799B2

公开(公告)日：2021-06-01

申请号：US16360099

申请日：2019-03-21

申请人： EVERSPIN TECHNOLOGIES, INC.

发明人： Renu Whig ,  Phillip Mather ,  Kenneth Smith ,  Sanjeev Aggarwal ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： H01L43/12 ,  B82Y25/00 ,  G01R33/00 ,  G01R33/09 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.