知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

43 条记录 (耗时 0.023 秒)

    Top electrode coupling in a magnetoresistive device using an etch stop layer
    3.
    发明授权
    Top electrode coupling in a magnetoresistive device using an etch stop layer 有权
    使用蚀刻停止层的磁阻器件中的顶部电极耦合

    公开(公告)号：US09431602B2

    公开(公告)日：2016-08-30

    申请号：US14297389

    申请日：2014-06-05

    申请人： Everspin Technologies, Inc.

    发明人： Kerry Joseph Nagel ,  Sanjeev Aggarwal ,  Moazzem Hossain ,  Nicholas Rizzo

    IPC分类号： H01L43/12

    CPC分类号： H01L27/222 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    摘要： A layer of silicon nitride above the bottom electrode and on the sidewalls of the magnetoresistive stack serves as an insulator and an etch stop during manufacturing of a magnetoresistive device. Non-selective chemical mechanical polishing removes any silicon nitride overlying a top electrode for the device along with silicon dioxide used for encapsulation. Later etching operations corresponding to formation of a via to reach the top electrode use selective etching chemistries that remove silicon dioxide to access the top electrode, but do not remove silicon nitride. Thus, the silicon nitride acts as an etch stop, and, in the resulting device, provides an insulating layer that prevents unwanted short circuits between the via and the bottom electrode and between the via and the sidewalls of the magnetoresistive device stack.

    摘要翻译： 在磁阻堆叠的底部电极和侧壁上方的氮化硅层用作磁阻器件的制造期间的绝缘体和蚀刻停止。 非选择性化学机械抛光除了用于器件的顶部电极以及用于封装的二氧化硅之外的任何氮化硅。 对应于形成通孔以到达顶部电极的后来的蚀刻操作使用去除二氧化硅以进入顶部电极但是不去除氮化硅的选择性蚀刻化学品。 因此，氮化硅用作蚀刻停止，并且在所得到的器件中提供了防止通孔和底部电极之间以及磁阻器件堆叠的通路和侧壁之间的不期望的短路的绝缘层。

    Magnetoresistive Memory Element having a Metal Oxide Tunnel Barrier
    4.
    发明申请
    Magnetoresistive Memory Element having a Metal Oxide Tunnel Barrier 审中-公开
    具有金属氧化物隧道屏障的磁阻存储元件

    公开(公告)号：US20160172582A1

    公开(公告)日：2016-06-16

    申请号：US15043633

    申请日：2016-02-15

    申请人： Everspin Technologies, Inc.

    发明人： Renu Whig ,  Jason Janesky ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine

    IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

    CPC分类号： H01L43/02 ,  B82Y10/00 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10S977/935

    摘要： A magnetoresistive memory array including a plurality of magnetoresistive memory elements wherein each magnetoresistive memory element comprises a free layer including at least one ferromagnetic layer having perpendicular magnetic anisotropy, a fixed layer, and a tunnel barrier, disposed between and in contact with the free and fixed layers. The tunnel barrier includes a first metal-oxide layer, having a thickness between 1 and 10 Angstroms, a second metal-oxide layer, having a thickness between 3 and 6 Angstroms, disposed on the first metal-oxide layer, and a third metal-oxide layer, having a thickness between 3 and 6 Angstroms, disposed over the second metal-oxide layer. In one embodiment, the third metal-oxide layer is in contact with the free layer or fixed layer. The tunnel barrier may also include a fourth metal-oxide layer, having a thickness between 1 and 10 Angstroms, disposed between the second and third metal-oxide layers.

    摘要翻译： 一种包括多个磁阻存储元件的磁阻存储器阵列，其中每个磁阻存储元件包括自由层，该自由层包括至少一个具有垂直磁各向异性的铁磁层，固定层和隧道势垒，该自由层设置在自由和固定 层。 隧道势垒包括设置在第一金属氧化物层上的第一金属氧化物层，其厚度为1至10埃，厚度为3埃至6埃的第二金属氧化物层，以及第三金属氧化物层， 氧化物层，其厚度为3埃至6埃，设置在第二金属氧化物层上。 在一个实施例中，第三金属氧化物层与自由层或固定层接触。 隧道势垒还可以包括设置在第二和第三金属氧化物层之间的厚度在1埃和10埃之间的第四金属氧化物层。

    Non-reactive photoresist removal and spacer layer optimization in a magnetoresistive device
    7.
    发明授权
    Non-reactive photoresist removal and spacer layer optimization in a magnetoresistive device 有权
    磁阻器件中的非反应性光致抗蚀剂去除和间隔层优化

    公开(公告)号：US09595665B2

    公开(公告)日：2017-03-14

    申请号：US15147682

    申请日：2016-05-05

    申请人： Everspin Technologies, Inc.

    发明人： Sarin A. Deshpande ,  Sanjeev Aggarwal ,  Kerry Joseph Nagel ,  Chaitanya Mudivarthi ,  Nicholas Rizzo ,  Jason Allen Janesky

    IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/08

    摘要： In forming a top electrode for a magnetoresistive device, photoresist used in patterning the electrode is stripped using a non-reactive stripping process. Such a non-reactive stripping process uses water vapor or some other non-oxidizing gas that also passivates exposed portions the magnetoresistive device. In such magnetoresistive devices, a non-reactive spacer layer is included that helps prevent diffusion between layers in the magnetoresistive device, where the non-reactive nature of the spacer layer prevents sidewall roughness that can interfere with accurate formation of the lower portions of the magnetoresistive device.

    摘要翻译： 在形成用于磁阻器件的顶部电极时，使用非反应性剥离工艺剥离用于图案化电极的光致抗蚀剂。 这种非反应性汽提方法使用水蒸汽或一些其它非氧化气体，其也钝化了磁阻装置的暴露部分。 在这种磁阻器件中，包括非反应性间隔层，其有助于防止磁阻器件中的层之间的扩散，其中间隔层的非反应特性防止可能干扰磁阻的下部的精确形成的侧壁粗糙度 设备。

    Magnetoresistive memory element and method of fabricating same
    8.
    发明授权
    Magnetoresistive memory element and method of fabricating same 有权
    磁阻存储元件及其制造方法

    公开(公告)号：US09419208B2

    公开(公告)日：2016-08-16

    申请号：US15046483

    申请日：2016-02-18

    申请人： Everspin Technologies, Inc.

    发明人： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

    IPC分类号： H01L29/82 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

    CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive memory element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer having perpendicular magnetic anisotropy, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. A first surface of the first dielectric is in contact with a first surface of the free magnetic layer. The magnetoresistive memory element further includes a second dielectric, having a first surface that is in contact with a second surface of the free magnetic layer, a conductor, including electrically conductive material, and an electrode, disposed between the second dielectric and the conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion including at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

    摘要翻译： 磁阻存储元件（例如，自旋转矩磁阻存储元件）包括固定磁性层，具有垂直磁各向异性的自由磁性层和设置在固定磁性层和自由磁性层之间的第一电介质。 第一电介质的第一表面与自由磁性层的第一表面接触。 磁阻存储元件还包括第二电介质，其具有与自由磁性层的第二表面接触的第一表面，包括导电材料的导体以及设置在第二电介质和导体之间的电极。 电极包括：（i）具有与第二电介质的第二表面接触的表面的非铁磁部分，和（ii）第二部分，其包括设置在第二电介质的非铁磁部分之间的至少一个铁磁材料 电极和导体。