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公开(公告)号：US20140141622A1
公开(公告)日：2014-05-22
申请号：US13682988
申请日：2012-11-21
申请人： DYNALOY, LLC
IPC分类号： H01L21/302
CPC分类号： H01L21/31133 , C23F1/16 , C23F1/18 , C23F1/32 , C23F1/44 , G03F7/425 , G03F7/426 , H01L21/32134 , H01L21/4835 , H01L21/4864
摘要： Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions.
摘要翻译： 描述了蚀刻金属的工艺。 在一个实施方案中，方法可以包括使基材与剥离溶液接触以从基材去除光致抗蚀剂以产生剥离的基材。 剥离的基板可以包括多个焊料柱和设置在多个焊料柱周围的多个含金属的场区域。 在说明性实施例中，多个场区域可以包括铜。 另外，该方法可以包括冲洗剥离的基底以产生漂洗的基底。 冲洗的基材可以基本上不含Sn层或Sn氧化物层。 此外，该方法可以包括使经冲洗的基底与能够从多个场区中去除一定量的一种或多种金属的蚀刻溶液接触。
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公开(公告)号：US09650594B2
公开(公告)日：2017-05-16
申请号：US14602414
申请日：2015-01-22
申请人： Dynaloy, LLC
IPC分类号： C11D3/30 , C11D7/32 , C11D7/50 , C11D7/26 , H01L21/027 , H01L23/00 , H01L21/02 , C11D11/00 , C11D3/20
CPC分类号： C11D7/3209 , C11D3/2068 , C11D7/261 , C11D7/263 , C11D7/3218 , C11D7/3263 , C11D11/0047 , G03F7/425 , H01L21/02068 , H01L21/0275 , H01L21/31133 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/11002 , H01L2224/1132 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/131 , H01L2224/14181 , H01L2224/16145 , H01L2224/16227 , H01L2924/00012 , H01L2924/014 , H01L2924/00014
摘要： The disclosure is directed solutions and processes to remove substances from substrates. Optionally, the substances can include photoresist on semiconductor wafers. The solution may include a quaternary ammonium hydroxide, a first amine, a second amine, and a third amine with the total amount of amine being no greater than about 95% by weight of a total weight of the solution. Additionally, a solution may include at least one amine, a quaternary ammonium hydroxide, and water and be free of a polar solvent other than water with the solution having a dynamic viscosity that is no greater than about 60 centipoise.
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公开(公告)号：US20150219996A1
公开(公告)日：2015-08-06
申请号：US14174246
申请日：2014-02-06
申请人： Dynaloy, LLC
发明人： Richard Dalton Peters , Travis Acra , Yuanmei Cao , Nichelle Maria Gilbert , Michael Tod Phenis , Kimberly Dona Pollard , Joshua Cummins , Meng Guo , Donald James Pfettscher
CPC分类号： G03F7/425 , C11D7/3209 , C11D7/3218 , C11D7/5022 , C11D11/0047
摘要： Stripping compositions are described that are useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays. The stripping compositions may be suitable for removing photoresists, including acrylic-based negative dry film photoresist, from electronic devices. In one embodiment, the stripping compositions can include a polar protic solvent, an amine or alkanoamine, and a quaternary ammonium hydroxide. In one embodiment the stripping compositions can include a polar protic solvent and at least two alkanoamines. The stripping compositions may be free of polar aprotic solvents.
摘要翻译： 描述了可用于从基底去除有机物质的剥离组合物，例如电子器件基底如微电子晶片或平板显示器。 汽提组合物可适用于从电子设备中去除光致抗蚀剂，包括基于丙烯酸的阴性干膜光致抗蚀剂。 在一个实施方案中，汽提组合物可包括极性质子溶剂，胺或烷酰胺和季铵氢氧化物。 在一个实施方案中，汽提组合物可以包括极性质子溶剂和至少两种烷酰胺。 汽提组合物可以不含极性非质子溶剂。
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公开(公告)号：US20140137894A1
公开(公告)日：2014-05-22
申请号：US13682974
申请日：2012-11-21
申请人： DYNALOY, LLC
CPC分类号： B08B7/0014 , C11D11/0047 , G03F7/42 , G03F7/428 , H01L21/02057 , H01L21/02063 , H01L21/31133
摘要： A process is described that is useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays. A process is presented for applying a minimum volume of a chemical stripping composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The process may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and especially negative dry film photoresist from electronic devices.
摘要翻译： 描述了可用于从诸如微电子晶片或平板显示器的电子器件衬底的衬底去除有机物质的方法。 提出了将最小体积的化学剥离组合物作为涂层施加到无机基底上的过程，由此加入足够的热量并通过漂洗完全除去有机物质。 该方法可适用于从电子设备中去除并且在一些情况下完全溶解正和负变种的光致抗蚀剂，特别是负的干膜光致抗蚀剂。
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公开(公告)号：US20160215240A1
公开(公告)日：2016-07-28
申请号：US14602414
申请日：2015-01-22
申请人： Dynaloy, LLC
IPC分类号： C11D7/32 , H01L21/02 , H01L23/00 , C11D7/26 , H01L21/027
CPC分类号： C11D7/3209 , C11D3/2068 , C11D7/261 , C11D7/263 , C11D7/3218 , C11D7/3263 , C11D11/0047 , G03F7/425 , H01L21/02068 , H01L21/0275 , H01L21/31133 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/11002 , H01L2224/1132 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/131 , H01L2224/14181 , H01L2224/16145 , H01L2224/16227 , H01L2924/00012 , H01L2924/014 , H01L2924/00014
摘要： The disclosure is directed solutions and processes to remove substances from substrates. Optionally, the substances can include photoresist on semiconductor wafers. The solution may include a quaternary ammonium hydroxide, a first amine, a second amine, and a third amine with the total amount of amine being no greater than about 95% by weight of a total weight of the solution. Additionally, a solution may include at least one amine, a quaternary ammonium hydroxide, and water and be free of a polar solvent other than water with the solution having a dynamic viscosity that is no greater than about 60 centipoise.
摘要翻译： 本公开是从基底去除物质的定向解决方案和方法。 任选地，物质可以包括在半导体晶片上的光致抗蚀剂。 溶液可包括氢氧化季铵，第一胺，第二胺和第三胺，胺的总量不大于溶液总重量的约95重量％。 此外，溶液可以包括至少一种胺，季铵氢氧化物和水，并且不含水以外的极性溶剂，所述溶液的动态粘度不大于约60厘泊。
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公开(公告)号：US09158202B2
公开(公告)日：2015-10-13
申请号：US13834513
申请日：2013-03-15
申请人： Dynaloy, LLC
发明人： Richard Dalton Peters , Travis Acra , Yuanmei Cao , Spencer Erich Hochstetler , Michael Tod Phenis , Kimberly Dona Pollard
CPC分类号： G03F7/422 , C11D7/3218 , C11D7/3263 , C11D7/3281 , C11D7/5009 , C11D7/5013 , C11D11/0047 , G03F7/425
摘要： Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices.
摘要翻译： 描述了可用于从基底例如光致抗蚀剂晶片去除有机和有机金属物质的组合物。 给出了将最小体积的组合物作为涂层施加到无机基底上的方法，从而加入足够的热量，并通过漂洗完全除去有机或有机金属物质。 组合物和方法可适用于从电子设备中去除和在一些情况下完全溶解正和负变种的光致抗蚀剂，特别是负的干膜光致抗蚀剂。
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公开(公告)号：US09029268B2
公开(公告)日：2015-05-12
申请号：US13682988
申请日：2012-11-21
申请人： Dynaloy, LLC
IPC分类号： H01L21/311 , H01L21/48 , H01L21/3213 , C23F1/16 , C23F1/18 , C23F1/32 , C23F1/44
CPC分类号： H01L21/31133 , C23F1/16 , C23F1/18 , C23F1/32 , C23F1/44 , G03F7/425 , G03F7/426 , H01L21/32134 , H01L21/4835 , H01L21/4864
摘要： Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions.
摘要翻译： 描述了蚀刻金属的工艺。 在一个实施方案中，方法可以包括使基材与剥离溶液接触以从基材去除光致抗蚀剂以产生剥离的基材。 剥离的基板可以包括多个焊料柱和设置在多个焊料柱周围的多个含金属的场区域。 在说明性实施例中，多个场区域可以包括铜。 另外，该方法可以包括冲洗剥离的基底以产生漂洗的基底。 冲洗的基材可以基本上不含Sn层或Sn氧化物层。 此外，该方法可以包括使经冲洗的基底与能够从多个场区中去除一定量的一种或多种金属的蚀刻溶液接触。
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公开(公告)号：US20140142017A1
公开(公告)日：2014-05-22
申请号：US13834513
申请日：2013-03-15
申请人： DYNALOY, LLC
发明人： Richard Dalton Peters , Travis Acra , Yuanmei Cao , Spencer Erich Hochstetler , Michael Tod Phenis , Kimberly Dona Pollard
IPC分类号： G03F7/42
CPC分类号： G03F7/422 , C11D7/3218 , C11D7/3263 , C11D7/3281 , C11D7/5009 , C11D7/5013 , C11D11/0047 , G03F7/425
摘要： Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices.
摘要翻译： 描述了可用于从基底例如光致抗蚀剂晶片去除有机和有机金属物质的组合物。 给出了将最小体积的组合物作为涂层施加到无机基底上的方法，从而加入足够的热量，并通过漂洗完全除去有机或有机金属物质。 组合物和方法可适用于从电子设备中去除和在一些情况下完全溶解正和负变种的光致抗蚀剂，特别是负的干膜光致抗蚀剂。
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公开(公告)号：US20140137899A1
公开(公告)日：2014-05-22
申请号：US13834752
申请日：2013-03-15
申请人： DYNALOY, LLC
IPC分类号： B08B3/10
摘要： Processes are described to remove substances from substrates. In an embodiment, a process may include providing a substrate including a first side and a second side with a substance being disposed on at least a portion of the first side of the substrate. The process may also include contacting the substrate with a solution such that the first side of the substrate is coated with the solution, at least a portion of the second side is free of the solution and at least a portion of the substance is released from the first side of the substrate. Additionally, the process may include rinsing the substrate to remove at least a portion of the substance released from the first side of the substrate.
摘要翻译： 描述了从底物中除去物质的方法。 在一个实施例中，工艺可以包括提供包括第一侧和第二侧的衬底，物质被设置在衬底的第一侧的至少一部分上。 该方法还可以包括使基底与溶液接触，使得基底的第一侧涂覆有溶液，第二侧的至少一部分不含溶液，并且物质的至少一部分从 基片的第一面。 另外，该方法可以包括漂洗基底以去除从基底的第一侧释放的物质的至少一部分。
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