公开(公告)号：US20130116159A1

公开(公告)日：2013-05-09

申请号：US13651790

申请日：2012-10-15

Applicant: DYNALOY, LLC

Inventor： Kimberly Dona Pollard ,  Donald Pfettscher ,  Meagan Hatfield ,  Spencer Erich Hochstetler ,  Nichelle M. Wheeler ,  Michael T. Phenis

IPC: C11D3/60 ,  G03F7/42

CPC classification number: C11D11/0047 ,  C11D1/72 ,  C11D3/044 ,  C11D3/2024 ,  C11D3/2068 ,  C11D3/2096 ,  C11D3/30 ,  C11D3/3445 ,  C11D3/43 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02041

Abstract: A photoresist and post etch cleaning solution for semiconductor wafers comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; E. an organic base comprising an amine compound; and F. a nonionic surfactant bearing at least one ether group. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.

Abstract translation: 一种用于半导体晶片的光致抗蚀剂和后蚀刻清洁溶液，包括：A.极性非质子溶剂，B.无机碱; C.用于所述无机碱的共溶剂; D.具有环醚基和至少一个带有伯羟基的取代基的不饱和脂环族化合物; E.包含胺化合物的有机碱; 和F.具有至少一个醚基团的非离子表面活性剂。 含有光致抗蚀剂残留物或后蚀刻残留物的晶片可以通过在喷雾或浸渍中使溶液接触来清洁。

公开(公告)号：US20140141622A1

公开(公告)日：2014-05-22

申请号：US13682988

申请日：2012-11-21

Applicant: DYNALOY, LLC

Inventor： Richard Dalton Peters ,  Travis Acra ,  Spencer Erich Hochstetler ,  Kimberly Dona Pollard

IPC: H01L21/302

CPC classification number: H01L21/31133 ,  C23F1/16 ,  C23F1/18 ,  C23F1/32 ,  C23F1/44 ,  G03F7/425 ,  G03F7/426 ,  H01L21/32134 ,  H01L21/4835 ,  H01L21/4864

Abstract: Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions.

Abstract translation: 描述了蚀刻金属的工艺。 在一个实施方案中，方法可以包括使基材与剥离溶液接触以从基材去除光致抗蚀剂以产生剥离的基材。 剥离的基板可以包括多个焊料柱和设置在多个焊料柱周围的多个含金属的场区域。 在说明性实施例中，多个场区域可以包括铜。 另外，该方法可以包括冲洗剥离的基底以产生漂洗的基底。 冲洗的基材可以基本上不含Sn层或Sn氧化物层。 此外，该方法可以包括使经冲洗的基底与能够从多个场区中去除一定量的一种或多种金属的蚀刻溶液接触。

公开(公告)号：US20140137894A1

公开(公告)日：2014-05-22

申请号：US13682974

申请日：2012-11-21

Applicant: DYNALOY, LLC

Inventor： Richard Dalton Peters ,  Travis Acra ,  Spencer Erich Hochstetler

IPC: B08B3/10 ,  B08B7/00

CPC classification number: B08B7/0014 ,  C11D11/0047 ,  G03F7/42 ,  G03F7/428 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31133

Abstract: A process is described that is useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays. A process is presented for applying a minimum volume of a chemical stripping composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The process may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and especially negative dry film photoresist from electronic devices.

Abstract translation: 描述了可用于从诸如微电子晶片或平板显示器的电子器件衬底的衬底去除有机物质的方法。 提出了将最小体积的化学剥离组合物作为涂层施加到无机基底上的过程，由此加入足够的热量并通过漂洗完全除去有机物质。 该方法可适用于从电子设备中去除并且在一些情况下完全溶解正和负变种的光致抗蚀剂，特别是负的干膜光致抗蚀剂。

公开(公告)号：US20140124896A1

公开(公告)日：2014-05-08

申请号：US13669087

申请日：2012-11-05

Applicant: DYNALOY, LLC

Inventor： Spencer Erich Hochstetler ,  Kimberly Dona Pollard ,  Leslie Shane Moody ,  Peter Borden Mackenzie ,  Junjia Liu

IPC: C07F9/78 ,  C07F9/70 ,  H01B1/12

CPC classification number: C07F9/78 ,  C07F9/70 ,  H01L21/2225 ,  H01L21/228 ,  H01L29/66803

Abstract: Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound.

Abstract translation: 描述了溶液和方法的制剂以形成包括掺杂剂的衬底。 在具体实施方案中，掺杂剂可以包括砷（As）。 在一个实施例中，提供了包括溶剂和掺杂剂的掺杂剂溶液。 在特定实施例中，掺杂剂溶液可以具有闪点，其至少近似等于能够使基底表面上的原子附着到掺杂剂溶液的含砷化合物的最低温度。 在一个实施方案中，底物表面上的多个硅原子与含砷化合物共价键合。

公开(公告)号：US08987181B2

公开(公告)日：2015-03-24

申请号：US13651790

申请日：2012-10-15

Applicant: Dynaloy, LLC

Inventor： Kimberly Dona Pollard ,  Donald Pfettscher ,  Meagan Hatfield ,  Spencer Erich Hochstetler ,  Nichelle M. Wheeler ,  Michael T. Phenis

IPC: C11D1/72 ,  C11D3/04 ,  C11D3/20 ,  C11D3/30 ,  C11D3/44 ,  C11D3/43 ,  C11D3/34 ,  C11D11/00 ,  G03F7/42

CPC classification number: C11D11/0047 ,  C11D1/72 ,  C11D3/044 ,  C11D3/2024 ,  C11D3/2068 ,  C11D3/2096 ,  C11D3/30 ,  C11D3/3445 ,  C11D3/43 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02041

Abstract: A photoresist and post etch cleaning solution for semiconductor wafers comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; E. an organic base comprising an amine compound; and F. a nonionic surfactant bearing at least one ether group. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.

Abstract translation: 一种用于半导体晶片的光致抗蚀剂和后蚀刻清洁溶液，包括：A.极性非质子溶剂，B.无机碱; C.用于所述无机碱的共溶剂; D.具有环醚基和至少一个带有伯羟基的取代基的不饱和脂环族化合物; E.包含胺化合物的有机碱; 和F.具有至少一个醚基团的非离子表面活性剂。 含有光致抗蚀剂残留物或后蚀刻残留物的晶片可以通过在喷雾或浸渍中使溶液接触来清洁。

公开(公告)号：US20150325442A1

公开(公告)日：2015-11-12

申请号：US14272482

申请日：2014-05-07

Applicant: Dynaloy, LLC

Inventor： Monika Karin Wiedmann ,  Keith Allen Cox ,  Leslie Shane Moody ,  Junjia Liu ,  Jessica Tanuwidjaja ,  Kimberly Dona Pollard ,  Kathryn Marie Kornau ,  Spencer Erich Hochstetler

IPC: H01L21/225 ,  H01L21/22

CPC classification number: H01L21/225 ,  H01L21/2225 ,  H01L21/228 ,  H01L29/66803

Abstract: Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant can include arsenic (As) or phosphorus (P). In an embodiment, a dopant solution is provided that includes a solvent and a dopant-containing molecule. In a particular embodiment, the solvent of the dopant solution can have a flashpoint that is at least 55° C. In some cases, the dopant-containing molecule can have a molecular weight that is no greater than about 300 g/mol. In other instances, a ratio of a concentration of a dopant-containing molecule relative to a concentration of a contaminant is no greater than about 1×1010.

Abstract translation: 描述了溶液和方法的制剂以形成包括掺杂剂的衬底。 在具体实施方案中，掺杂剂可以包括砷（As）或磷（P）。 在一个实施方案中，提供了包含溶剂和含掺杂剂的分子的掺杂剂溶液。 在特定的实施方案中，掺杂剂溶液的溶剂可以具有至少55℃的闪点。在一些情况下，含掺杂剂的分子可以具有不大于约300g / mol的分子量。 在其他情况下，含掺杂剂的分子的浓度相对于污染物的浓度的比例不大于约1×10 10。

公开(公告)号：US09158202B2

公开(公告)日：2015-10-13

申请号：US13834513

申请日：2013-03-15

Applicant: Dynaloy, LLC

Inventor： Richard Dalton Peters ,  Travis Acra ,  Yuanmei Cao ,  Spencer Erich Hochstetler ,  Michael Tod Phenis ,  Kimberly Dona Pollard

IPC: G03F7/42 ,  C11D7/32 ,  C11D11/00

CPC classification number: G03F7/422 ,  C11D7/3218 ,  C11D7/3263 ,  C11D7/3281 ,  C11D7/5009 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/425

Abstract: Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices.

Abstract translation: 描述了可用于从基底例如光致抗蚀剂晶片去除有机和有机金属物质的组合物。 给出了将最小体积的组合物作为涂层施加到无机基底上的方法，从而加入足够的热量，并通过漂洗完全除去有机或有机金属物质。 组合物和方法可适用于从电子设备中去除和在一些情况下完全溶解正和负变种的光致抗蚀剂，特别是负的干膜光致抗蚀剂。

公开(公告)号：US20150133356A1

公开(公告)日：2015-05-14

申请号：US14601550

申请日：2015-01-21

Applicant: Dynaloy, LLC

Inventor： Kimberly Dona Pollard ,  Donald James Pfettscher ,  Meagan Hatfield ,  Spencer Erich Hochstetler ,  Nichelle Maria Gilbert ,  Michael Tod Phenis

IPC: C11D11/00 ,  C11D3/43 ,  H01L21/02 ,  C11D3/30 ,  C11D3/20 ,  C11D3/04 ,  C11D1/72 ,  C11D3/34

CPC classification number: C11D11/0047 ,  C11D1/72 ,  C11D3/044 ,  C11D3/2024 ,  C11D3/2068 ,  C11D3/2096 ,  C11D3/30 ,  C11D3/3445 ,  C11D3/43 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02041

Abstract: A process for cleaning a semi-conductor wafer comprising providing etched wafer containing metal pillars, contacting the etched wafer with a cleaning solution, removing the wafer from the cleaning solution, wherein the resulting wafer is substantially free of post etch residues and photoresist residues without etching the metal pillars by the cleaning solution, the cleaning solution comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; and E. an organic base comprising an amine compound. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.

Abstract translation: 一种用于清洁半导体晶片的方法，包括提供含有金属柱的蚀刻晶片，将蚀刻的晶片与清洁溶液接触，从清洁溶液中除去晶片，其中所得晶片基本上没有蚀刻残留物和光致抗蚀剂残留物而没有蚀刻 所述清洁溶液的金属柱，所述清洗溶液包含：A.极性非质子溶剂，B.无机碱; C.用于所述无机碱的共溶剂; D.具有环醚基和至少一个带有伯羟基的取代基的不饱和脂环族化合物; 和E.包含胺化合物的有机碱。 含有光致抗蚀剂残留物或后蚀刻残留物的晶片可以通过在喷雾或浸渍中使溶液接触来清洁。

公开(公告)号：US09029268B2

公开(公告)日：2015-05-12

申请号：US13682988

申请日：2012-11-21

Applicant: Dynaloy, LLC

Inventor： Richard Dalton Peters ,  Travis Acra ,  Spencer Erich Hochstetler ,  Kimberly Dona Pollard

IPC: H01L21/311 ,  H01L21/48 ,  H01L21/3213 ,  C23F1/16 ,  C23F1/18 ,  C23F1/32 ,  C23F1/44

CPC classification number: H01L21/31133 ,  C23F1/16 ,  C23F1/18 ,  C23F1/32 ,  C23F1/44 ,  G03F7/425 ,  G03F7/426 ,  H01L21/32134 ,  H01L21/4835 ,  H01L21/4864

Abstract: Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions.

Abstract translation: 描述了蚀刻金属的工艺。 在一个实施方案中，方法可以包括使基材与剥离溶液接触以从基材去除光致抗蚀剂以产生剥离的基材。 剥离的基板可以包括多个焊料柱和设置在多个焊料柱周围的多个含金属的场区域。 在说明性实施例中，多个场区域可以包括铜。 另外，该方法可以包括冲洗剥离的基底以产生漂洗的基底。 冲洗的基材可以基本上不含Sn层或Sn氧化物层。 此外，该方法可以包括使经冲洗的基底与能够从多个场区中去除一定量的一种或多种金属的蚀刻溶液接触。

公开(公告)号：US08853438B2

公开(公告)日：2014-10-07

申请号：US13669087

申请日：2012-11-05

Applicant: Dynaloy, LLC

Inventor： Spencer Erich Hochstetler ,  Kimberly Dona Pollard ,  Leslie Shane Moody ,  Peter Borden Mackenzie ,  Junjia Liu

IPC: C07F9/66 ,  H01L21/22 ,  H01B1/00

CPC classification number: C07F9/78 ,  C07F9/70 ,  H01L21/2225 ,  H01L21/228 ,  H01L29/66803

Abstract: Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound.

Abstract translation: 描述了溶液和方法的制剂以形成包括掺杂剂的衬底。 在具体实施方案中，掺杂剂可以包括砷（As）。 在一个实施例中，提供了包括溶剂和掺杂剂的掺杂剂溶液。 在特定实施例中，掺杂剂溶液可以具有闪点，其至少近似等于能够使基底表面上的原子附着到掺杂剂溶液的含砷化合物的最低温度。 在一个实施方案中，底物表面上的多个硅原子与含砷化合物共价键合。