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    RESIST STRIPPING COMPOSITIONS AND METHODS FOR MANUFACTURING ELECTRICAL DEVICES
    3.
    发明申请
    RESIST STRIPPING COMPOSITIONS AND METHODS FOR MANUFACTURING ELECTRICAL DEVICES 有权
    电阻剥离组合物和制造电气装置的方法

    公开(公告)号：US20120040529A1

    公开(公告)日：2012-02-16

    申请号：US13265647

    申请日：2010-04-20

    Applicant: Andreas Klipp

    Inventor： Andreas Klipp

    IPC: H01L21/768 ,  C11D3/60 ,  G03F7/42

    CPC classification number: G03F7/425 ,  B08B3/04 ,  C11D3/26 ,  C11D3/30 ,  C11D3/3445 ,  H01L21/02063 ,  H01L21/31133

    Abstract: A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.

    Abstract translation: 一种液体组合物，其包含（A）至少一种极性有机溶剂，选自在溶解的四甲基氢氧化铵（B）的0.06至4重量％的存在下显示的溶剂，所述重量百分比基于完全重量 对于含有深紫外线吸收发色团的30nm厚的聚合物阻挡抗反射层，（B）至少一种氢氧化季铵，和（C）至少一种季铵氢氧化物，对于相应的测试溶液（AB），在50℃下的恒定去除速率， 至少一种含有至少一个伯氨基的芳族胺，其制备方法和电气装置的制造方法，使用液体组合物作为抗蚀剂剥离组合物及其用于除去负色调和正色调光致抗蚀剂和柱 通过图案化通过硅通孔和/或通过电镀和碰撞来制造3D堆叠集成电路和3D晶片级封装中的蚀刻残留物。

    PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION
    8.
    发明申请
    PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION 审中-公开
    光刻胶和后处理残留清洁溶液

    公开(公告)号：US20150133356A1

    公开(公告)日：2015-05-14

    申请号：US14601550

    申请日：2015-01-21

    Applicant: Dynaloy, LLC

    Inventor： Kimberly Dona Pollard ,  Donald James Pfettscher ,  Meagan Hatfield ,  Spencer Erich Hochstetler ,  Nichelle Maria Gilbert ,  Michael Tod Phenis

    IPC: C11D11/00 ,  C11D3/43 ,  H01L21/02 ,  C11D3/30 ,  C11D3/20 ,  C11D3/04 ,  C11D1/72 ,  C11D3/34

    CPC classification number: C11D11/0047 ,  C11D1/72 ,  C11D3/044 ,  C11D3/2024 ,  C11D3/2068 ,  C11D3/2096 ,  C11D3/30 ,  C11D3/3445 ,  C11D3/43 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02041

    Abstract: A process for cleaning a semi-conductor wafer comprising providing etched wafer containing metal pillars, contacting the etched wafer with a cleaning solution, removing the wafer from the cleaning solution, wherein the resulting wafer is substantially free of post etch residues and photoresist residues without etching the metal pillars by the cleaning solution, the cleaning solution comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; and E. an organic base comprising an amine compound. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.

    Abstract translation: 一种用于清洁半导体晶片的方法，包括提供含有金属柱的蚀刻晶片，将蚀刻的晶片与清洁溶液接触，从清洁溶液中除去晶片，其中所得晶片基本上没有蚀刻残留物和光致抗蚀剂残留物而没有蚀刻 所述清洁溶液的金属柱，所述清洗溶液包含：A.极性非质子溶剂，B.无机碱; C.用于所述无机碱的共溶剂; D.具有环醚基和至少一个带有伯羟基的取代基的不饱和脂环族化合物; 和E.包含胺化合物的有机碱。 含有光致抗蚀剂残留物或后蚀刻残留物的晶片可以通过在喷雾或浸渍中使溶液接触来清洁。

    Resist stripping compositions and methods for manufacturing electrical devices
    9.
    发明授权
    Resist stripping compositions and methods for manufacturing electrical devices 有权
    抗剥离组合物和制造电气装置的方法

    公开(公告)号：US09005367B2

    公开(公告)日：2015-04-14

    申请号：US13265647

    申请日：2010-04-20

    Applicant: Andreas Klipp

    Inventor： Andreas Klipp

    IPC: B08B3/04 ,  C11D3/26 ,  C11D3/30 ,  C11D3/34 ,  C11D3/43 ,  C11D3/44 ,  G03F7/42 ,  H01L21/02 ,  H01L21/311

    CPC classification number: G03F7/425 ,  B08B3/04 ,  C11D3/26 ,  C11D3/30 ,  C11D3/3445 ,  H01L21/02063 ,  H01L21/31133

    Abstract: A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.

    Abstract translation: 一种液体组合物，其包含（A）至少一种极性有机溶剂，选自在溶解的四甲基氢氧化铵（B）的0.06至4重量％的存在下显示的溶剂，所述重量百分比基于完全重量 对于含有深紫外线吸收发色团的30nm厚的聚合物阻挡抗反射层，（B）至少一种氢氧化季铵，和（C）至少一种季铵氢氧化物，对于相应的测试溶液（AB），在50℃下的恒定去除速率， 至少一种含有至少一个伯氨基的芳族胺，其制备方法和电气装置的制造方法，使用液体组合物作为抗蚀剂剥离组合物及其用于除去负色调和正色调光致抗蚀剂和柱 通过图案化通过硅通孔和/或通过电镀和碰撞来制造3D堆叠集成电路和3D晶片级封装中的蚀刻残留物。

    Methods and compositions for chemically treating a substrate using foam technology
    10.
    发明申请
    Methods and compositions for chemically treating a substrate using foam technology 审中-公开
    使用泡沫技术对底物进行化学处理的方法和组合物

    公开(公告)号：US20030171239A1

    公开(公告)日：2003-09-11

    申请号：US10060109

    申请日：2002-01-28

    Inventor： Bakul P. Patel ,  Mihaela Anca-Mac Cernat ,  Robert J. Small

    IPC: C11D017/00

    CPC classification number: C23F3/06 ,  C11D3/0094 ,  C11D3/046 ,  C11D3/2058 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/26 ,  C11D3/28 ,  C11D3/30 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3445 ,  C11D3/43 ,  C11D11/0047

    Abstract: The present invention relates to methods and compositions for treating a surface of a substrate by foam technology that includes at least one treatment chemical. The invention more particularly relates to the removal of undesired matter from the surface of substrates with small features, where such undesired matter may comprise organic and inorganic compounds such as particles, films from photoresist material, and traces of any other impurities such as metals deposited during planarization or etching. A method according to the present invention for treating a surface of a substrate comprises generating a foam from a liquid composition, wherein the liquid composition comprises a gas; a surfactant; and at least one component selected from the group consisting of a fluoride, a hydroxylamine, an amine and periodic acid; contacting the foam with the surface of a substrate; and, removing the undesired matter from the surface of the substrate.

    Abstract translation: 本发明涉及通过包括至少一种处理化学品的泡沫技术处理基材表面的方法和组合物。 本发明更具体地涉及从具有小特征的基板的表面去除不期望的物质，其中这种不期望的物质可以包含有机和无机化合物，例如颗粒，来自光致抗蚀剂材料的膜，以及痕迹的任何其它杂质，例如在 平面化或蚀刻。 根据本发明的用于处理基材表面的方法包括从液体组合物生成泡沫，其中所述液体组合物包含气体; 表面活性剂; 和选自氟化物，羟胺，胺和高碘酸的至少一种组分; 使泡沫与基材的表面接触; 并且从衬底的表面去除不需要的物质。

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