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公开(公告)号：US20150094249A1
公开(公告)日：2015-04-02
申请号：US14038877
申请日：2013-09-27
Applicant: Dynaloy, LLC
Inventor： Richard Dalton Peters , Travis W. Acra , Yuanmei Cao , Nichelle Maria Gilbert , Michael Tod Phenis , Kimberly Dona Pollard , Joshua Cummins , Meng Guo , Donald James Pfettscher
IPC: G03F7/42
CPC classification number: G03F7/425 , C11D11/0047 , G03F7/423
Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.
Abstract translation: 本公开是从基底去除物质的定向解决方案和方法。 在某些情况下，这些物质可以包括在半导体晶片上的光致抗蚀剂。 溶液可以包括不大于溶液总重量的15重量％的量的过氧化氢。 该溶液还可以包括季铵氢氧化物和水。 此外，溶液可以包括胺，共溶剂或两者。 可以将基材的一个或多个侧面与溶液接触以从溶液中除去一种或多种物质。
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公开(公告)号：US09291910B2
公开(公告)日：2016-03-22
申请号：US14038877
申请日：2013-09-27
Applicant: Dynaloy, LLC
Inventor： Richard Dalton Peters , Travis W. Acra , Yuanmei Cao , Nichelle Maria Gilbert , Michael Tod Phenis , Kimberly Dona Pollard , Joshua Cummins , Meng Guo , Donald James Pfettscher
CPC classification number: G03F7/425 , C11D11/0047 , G03F7/423
Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.
Abstract translation: 本公开是从基底去除物质的定向解决方案和方法。 在某些情况下，这些物质可以包括在半导体晶片上的光致抗蚀剂。 溶液可以包括不大于溶液总重量的15重量％的量的过氧化氢。 该溶液还可以包括季铵氢氧化物和水。 此外，溶液可以包括胺，共溶剂或两者。 可以将基材的一个或多个侧面与溶液接触以从溶液中除去一种或多种物质。
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公开(公告)号：US20150219996A1
公开(公告)日：2015-08-06
申请号：US14174246
申请日：2014-02-06
Applicant: Dynaloy, LLC
Inventor： Richard Dalton Peters , Travis Acra , Yuanmei Cao , Nichelle Maria Gilbert , Michael Tod Phenis , Kimberly Dona Pollard , Joshua Cummins , Meng Guo , Donald James Pfettscher
CPC classification number: G03F7/425 , C11D7/3209 , C11D7/3218 , C11D7/5022 , C11D11/0047
Abstract: Stripping compositions are described that are useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays. The stripping compositions may be suitable for removing photoresists, including acrylic-based negative dry film photoresist, from electronic devices. In one embodiment, the stripping compositions can include a polar protic solvent, an amine or alkanoamine, and a quaternary ammonium hydroxide. In one embodiment the stripping compositions can include a polar protic solvent and at least two alkanoamines. The stripping compositions may be free of polar aprotic solvents.
Abstract translation: 描述了可用于从基底去除有机物质的剥离组合物，例如电子器件基底如微电子晶片或平板显示器。 汽提组合物可适用于从电子设备中去除光致抗蚀剂，包括基于丙烯酸的阴性干膜光致抗蚀剂。 在一个实施方案中，汽提组合物可包括极性质子溶剂，胺或烷酰胺和季铵氢氧化物。 在一个实施方案中，汽提组合物可以包括极性质子溶剂和至少两种烷酰胺。 汽提组合物可以不含极性非质子溶剂。
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公开(公告)号：US20150133356A1
公开(公告)日：2015-05-14
申请号：US14601550
申请日：2015-01-21
Applicant: Dynaloy, LLC
Inventor： Kimberly Dona Pollard , Donald James Pfettscher , Meagan Hatfield , Spencer Erich Hochstetler , Nichelle Maria Gilbert , Michael Tod Phenis
CPC classification number: C11D11/0047 , C11D1/72 , C11D3/044 , C11D3/2024 , C11D3/2068 , C11D3/2096 , C11D3/30 , C11D3/3445 , C11D3/43 , G03F7/425 , G03F7/426 , H01L21/02041
Abstract: A process for cleaning a semi-conductor wafer comprising providing etched wafer containing metal pillars, contacting the etched wafer with a cleaning solution, removing the wafer from the cleaning solution, wherein the resulting wafer is substantially free of post etch residues and photoresist residues without etching the metal pillars by the cleaning solution, the cleaning solution comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; and E. an organic base comprising an amine compound. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.
Abstract translation: 一种用于清洁半导体晶片的方法，包括提供含有金属柱的蚀刻晶片，将蚀刻的晶片与清洁溶液接触，从清洁溶液中除去晶片，其中所得晶片基本上没有蚀刻残留物和光致抗蚀剂残留物而没有蚀刻 所述清洁溶液的金属柱，所述清洗溶液包含：A.极性非质子溶剂，B.无机碱; C.用于所述无机碱的共溶剂; D.具有环醚基和至少一个带有伯羟基的取代基的不饱和脂环族化合物; 和E.包含胺化合物的有机碱。 含有光致抗蚀剂残留物或后蚀刻残留物的晶片可以通过在喷雾或浸渍中使溶液接触来清洁。
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