摘要:
Characterizing dielectric surfaces by detecting electron tunneling. An apparatus includes an atomic force probe. A mechanical actuator is connected to the atomic force probe. A mechanical modulator is connected to the mechanical actuator. The mechanical modulator modulates the mechanical actuator and the atomic force probe at the resonant frequency of the atomic force probe. An electrical modulator is connected to the atomic force probe. A feedback sensing circuit is connected to the mechanical modulator to detect movement of the atomic force probe and provide information about the movement of the atomic force probe to the mechanical modulator allowing the mechanical modulator to modulate the atomic force probe at the resonant frequency of the atomic force probe as the resonant frequency of the atomic force probe changes. An FM detector is connected to the feedback circuit detects changes in the resonant frequency of the atomic force probe.
摘要:
The present invention develops a new type of SPM, a scanning tunneling charge transfer microscope (STCTM). The STCTM is capable of first, detecting the transfer of an ultrasmall amount of charge (single electrons) or current (attoampere) into or out from a surface with atomic resolution and second, simultaneously measuring the electronic response of that surface to the transferred charge. This dual capability can be achieved by appropriately combining the virtues of the STM and a modified EFM. The STM provides the atomic resolution for the charge transfer, while the modified EFM provides the sub-electronic charge sensitivity for the current and charge detection. The STCTM, with sensitivity many orders of magnitude better than with SPM technology currently available, can be used to characterize the properties of molecules, ultrathin oxides, insulator surfaces, and clusters on insulators with atomic resolution.
摘要:
A near field optical microscopy method and apparatus eliminates the necessity of an aperture for scanning a sample surface and greatly reduces the detected background signal. A small dimension tip, on the order of atomic dimension, is disposed in close proximity to the sample surface. A dither motion is applied to the tip at a first frequency in a direction substantially normal to the plane of the sample surface. Dither motion is simultaneously applied to the sample at a second frequency in a direction substantially parallel to the plane of the sample surface. The amplitude of the motions are chosen to be comparable to the desired measurement resolution. The end of the tip is illuminated by optical energy. The scattered light from the tip and surface is detected at the difference frequency for imaging the sample surface at sub-wavelength resolution without the use of an aperture. Alternatively, the tip is maintained stationary and the sample undergoes motion in the two directions.
摘要:
An apparatus and method for generating microscopic scan data of C-V and/or dC/dV over a scan area. A scanning microscope, for example a scanning force microscope, is provided with a voltage biased tip, for example, of tungsten, which is scanned across an area to derive the data. The data can be used to derive a plot of semiconductor dopant level across the scan area. Other material properties can be derived, for example, carrier generation and recombination rates and subsurface defects.
摘要:
Apparatus is provided for investigating surface structures irrespective of the materials involved. A fine scanning tip is heated to a steady state temperature at a location remote from the structure to be investigated. Thereupon, the scanning tip is moved to a position proximate to, but spaced from the structure. At the proximate position, the temperature variation from the steady state temperature is detected. The scanning tip is scanned across the surface sturcture with the aforesaid temperature variation maintained constant. Piezo electric drivers move the scanning tip both transversely of, and parallel to, the surface structure. Feedback control assures the proper transverse positioning of the scanning tip and voltages thereby generated replicate the surface structure to be investigated.
摘要:
Quantitative dopant profile measurements are performed on a nanometer scale by using a scanning capacitance microsope. A nanometer scale tip of the microscope is positioned at a semiconductor surface, and local capacitance change is measured as a function of sample bias. The method incorporates a feedback system and procedure in which the magnitude of the AC bias voltage applied to the sample is adjusted to maintain a constant capacitance change as the tip is scanned across the sample surface. A one dimensional model is used to extract dopant density profiles from the measurements made by the scanning capacitance microscope.
摘要:
A method and apparatus for generating a spatially improved and accurate dopant density profile of a doped material using scanning probe microscopy, wherein the new method utilizes an iterative process to approach a dopant density profile having a user definable accuracy by creating a new two-dimensional gradient model which accounts for gradients in doping concentrations within the doped material.
摘要:
A method and apparatus for monitoring process fluids used in the manufacture of semiconductor components and other microelectronic devices relies upon detection of the phase shift of a pair of optical energy beams encountering a bubble or particle in the fluid. The system distinguishes between bubbles and particles having indices of refraction greater than the surrounding fluid and between different types and sizes of particles.
摘要:
Apparatus for non-destructively inspecting a material includes a housing for holding the material with a window in the housing for the transmission of a laser beam and a pressurized fluid within the housing in contact with the material. A first laser source generates a first beam at a first frequency, and the beam is directed through the window and onto said material. A second laser source generates a second beam at a second frequency, the second frequency being related to the first frequency whereby Bragg scattering of the second beam is realized in the pressurized fluid. The second beam is directed through the window and onto said material, and the Bragg scattered second beam is detected.