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    Silicon photonics wafer using standard silicon-on-insulator processes through substrate removal or transfer
    1.
    发明授权
    Silicon photonics wafer using standard silicon-on-insulator processes through substrate removal or transfer 有权
    硅光子晶片使用标准的绝缘体上硅工艺，通过衬底去除或转移

    公开(公告)号：US08901576B2

    公开(公告)日：2014-12-02

    申请号：US13353162

    申请日：2012-01-18

    申请人： Fuad E. Doany ,  Benjamin G. Lee ,  Alexander V. Rylyakov ,  Clint L. Schow ,  Marc A. Taubenblatt

    发明人： Fuad E. Doany ,  Benjamin G. Lee ,  Alexander V. Rylyakov ,  Clint L. Schow ,  Marc A. Taubenblatt

    IPC分类号： H01L33/00 ,  H01L29/18 ,  H01L21/00

    CPC分类号： H01L21/76251

    摘要： Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.

    摘要翻译： 提供了硅光子晶片的处理。 接收包括有源硅光子学层，薄掩埋氧化物层和硅衬底的硅光子晶片。 薄的掩埋氧化物层位于有源硅光子层和硅衬底之间。 还接收包括有源电层的电CMOS晶片。 硅光子晶片的有源硅光子层被倒装芯片结合到电CMOS晶片的有源电层。 去除暴露出薄的掩埋氧化物层的背面的硅衬底。 将低光学折射率背衬晶片添加到薄的掩埋氧化物层的暴露的背面。 低光学折射率背衬晶片是玻璃衬底或硅衬底晶片。 硅衬底晶片包括附着到薄掩埋氧化物层的厚氧化物层。

    SILICON PHOTONICS WAFER USING STANDARD SILICON-ON-INSULATOR PROCESSES THROUGH SUBSTRATE REMOVAL OR TRANSFER
    2.
    发明申请
    SILICON PHOTONICS WAFER USING STANDARD SILICON-ON-INSULATOR PROCESSES THROUGH SUBSTRATE REMOVAL OR TRANSFER 有权
    使用通过基板去除或转移的标准硅绝缘体工艺的硅光电晶体

    公开(公告)号：US20130181233A1

    公开(公告)日：2013-07-18

    申请号：US13353162

    申请日：2012-01-18

    申请人： Fuad E. Doany ,  Benjamin G. Lee ,  Alexander V. Rylyakov ,  Clint L. Schow ,  Marc A. Taubenblatt

    发明人： Fuad E. Doany ,  Benjamin G. Lee ,  Alexander V. Rylyakov ,  Clint L. Schow ,  Marc A. Taubenblatt

    IPC分类号： H01L33/60 ,  H01L33/08

    CPC分类号： H01L21/76251

    摘要： Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.

    摘要翻译： 提供了硅光子晶片的处理。 接收包括有源硅光子学层，薄掩埋氧化物层和硅衬底的硅光子晶片。 薄的掩埋氧化物层位于有源硅光子层和硅衬底之间。 还接收包括有源电层的电CMOS晶片。 硅光子晶片的有源硅光子层被倒装芯片结合到电CMOS晶片的有源电层。 去除暴露出薄的掩埋氧化物层的背面的硅衬底。 将低光学折射率背衬晶片添加到薄的掩埋氧化物层的暴露的背面。 低光学折射率背衬晶片是玻璃衬底或硅衬底晶片。 硅衬底晶片包括附着到薄掩埋氧化物层的厚氧化物层。

    Particle path determination system
    7.
    发明授权
    Particle path determination system 失效
    粒径测定系统

    公开(公告)号：US5133602A

    公开(公告)日：1992-07-28

    申请号：US682752

    申请日：1991-04-08

    申请人： John S. Batchelder ,  Donald M. DeCain ,  Philip C. D. Hobbs ,  Marc A. Taubenblatt

    发明人： John S. Batchelder ,  Donald M. DeCain ,  Philip C. D. Hobbs ,  Marc A. Taubenblatt

    IPC分类号： G01N15/14 ,  G01N15/02 ,  G01N21/21 ,  G01P11/00

    CPC分类号： G01N15/0205 ,  G01N2015/0238 ,  G01N2021/1759 ,  G01N2021/4792

    摘要： A bright-field, particle position determining optical system is disclosed that uses both phase shift and extinction signals to determine particle trajectories. In a first embodiment, a pair of orthogonally polarized beams are positioned along an axis that intersects a particle's flow path at an acute angle. An optical system recombines the beams after they exit the flow path, the combined beams manifesting an elliptical polarization if a particle intersects one of the beams. Bright field detectors detect polarization components of the combined beam, provide a phase shift signal between the beam's orthogonal components and provide corresponding signals to a processor. The processor determines a signal asymmetry from the phase shift signal that is indicative of a particle's position in the flow path. Another embodiment of the invention examines a signal resulting from the beam's phase shift and determines a correction factor that is dependent upon the distance of the particle from the focal plane of the beams. Another embodiment employs a dithering system for cyclically moving one or more optical beams across a particle to further enable its trajectory or position to be determined.

    摘要翻译： 公开了使用相移和消光信号来确定粒子轨迹的明场，粒子位置确定光学系统。 在第一实施例中，一对正交偏振光束沿着与颗粒的流动通道以锐角相交的轴线定位。 光束在离开流路之后将光束重新组合，如果粒子与光束之一相交，那么组合光束表现出椭圆极化。 光场检测器检测组合光束的偏振分量，在光束的正交分量之间提供相移信号，并向处理器提供相应的信号。 处理器确定来自指示颗粒在流动路径中的位置的相移信号的信号不对称性。 本发明的另一个实施例检查由光束的相移产生的信号，并确定取决于粒子与光束的焦平面的距离的校正因子。 另一个实施例采用抖动系统来循环移动一个或多个光束穿过颗粒，以进一步确定其轨迹或位置。

    User configurable multivariate time series reduction tool control method
    8.
    发明授权
    User configurable multivariate time series reduction tool control method 有权
    用户可配置的多变量时间序列减少工具控制方法

    公开(公告)号：US06678569B2

    公开(公告)日：2004-01-13

    申请号：US10013070

    申请日：2001-11-06

    申请人： Raymond J. Bunkofske ,  John Z. Colt, Jr. ,  James J McGill ,  Nancy T. Pascoe ,  Maheswaran Surendra ,  Marc A. Taubenblatt ,  Asif Ghias

    发明人： Raymond J. Bunkofske ,  John Z. Colt, Jr. ,  James J McGill ,  Nancy T. Pascoe ,  Maheswaran Surendra ,  Marc A. Taubenblatt ,  Asif Ghias

    IPC分类号： G06F1900

    CPC分类号： G05B23/0221 ,  G05B2219/45031 ,  H01L22/20

    摘要： A method and structure for controlling a manufacturing tool includes measuring different manufacturing parameters of the tool, transforming a plurality of time series of the manufacturing parameters into intermediate variables based on restrictions and historical reference statistics, generating a surrogate variable based on the intermediate variables, if the surrogate variable exceeds a predetermined limit, identifying a first intermediate variable, of the intermediate variables, that caused the surrogate variable to exceed the predetermined limit and identifying a first manufacturing parameter associated with the first intermediate variable, and inhibiting further operation of the tool until the first manufacturing parameter has been modified to bring the surrogate value within the predetermined limit.

    摘要翻译： 用于控制制造工具的方法和结构包括测量工具的不同制造参数，基于限制和历史参考统计将多个制造参数的时间序列变换为中间变量，基于中间变量生成替代变量，如果 替代变量超过预定的限制，识别导致替代变量超过预定极限的中间变量的第一中间变量，并且识别与第一中间变量相关联的第一制造参数，并且禁止工具的进一步操作直到 修改了第一制造参数以使代理值在预定限度内。

    Dark field imaging defect inspection system for repetitive pattern integrated circuits
    10.
    发明授权
    Dark field imaging defect inspection system for repetitive pattern integrated circuits 失效
    用于重复图案集成电路的暗场成像缺陷检查系统

    公开(公告)号：US5177559A

    公开(公告)日：1993-01-05

    申请号：US701936

    申请日：1991-05-17

    申请人： John S. Batchelder ,  Marc A. Taubenblatt

    发明人： John S. Batchelder ,  Marc A. Taubenblatt

    IPC分类号： G01B11/24 ,  G01N21/88 ,  G01N21/94 ,  G01N21/956 ,  H01L21/66

    CPC分类号： G02B21/10 ,  G01N21/95623 ,  G01N2021/8822

    摘要： An optical inspection system for patterned semiconductor wafers generates a dark field image of the wafer by applying a collimated beam of monochrome light at an incident angle with respect to the surface of the wafer of between 8.degree. and a maximum angle defined by the numerical aperture of the imaging system and collecting the light which is scattered at angles approximately normal to the surface of the wafer and within the numerical aperture of the imaging system. In addition, the incident light is at an angle of 45.degree. in the surface plane of the wafer with respect to the rectangular lines which predominate in the pattern. Before forming the dark field image, the collected light is passed through a Fourier transform filter which substantially attenuates spatial frequency components corresponding to the pattern. In the resultant dark field image, defects in the pattern and contaminating particles are accentuated relative to the pattern features.

    摘要翻译： 用于图案化半导体晶片的光学检查系统通过以相对于晶片表面的入射角施加8°的准直光束和由数字孔径的数值孔径限定的最大角度来施加晶片的暗视场图像 成像系统并收集以大致垂直于晶片表面并且在成像系统的数值孔径内散射的光。 此外，入射光在晶片的表面平面上相对于以图案为主的矩形线成45度的角度。 在形成暗场图像之前，所收集的光通过傅里叶变换滤波器，该滤波器基本上衰减对应于图案的空间频率分量。 在所得到的暗场图像中，图案和污染颗粒中的缺陷相对于图案特征被加强。