公开(公告)号：US09993185B2

公开(公告)日：2018-06-12

申请号：US14621265

申请日：2015-02-12

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Sameer Walavalkar ,  Chieh-feng Chang ,  Axel Scherer

IPC: G01N21/65 ,  A61B5/1459 ,  A61B5/00 ,  B82Y40/00 ,  A61B5/1473 ,  A61B5/07 ,  B82Y30/00

CPC classification number: A61B5/1459 ,  A61B5/0075 ,  A61B5/076 ,  A61B5/14735 ,  A61B5/6848 ,  A61B5/686 ,  A61B2562/0285 ,  A61B2562/066 ,  A61B2562/12 ,  A61B2562/223 ,  B01J2219/00509 ,  B01J2219/0052 ,  B01J2219/00531 ,  B82Y30/00 ,  B82Y40/00 ,  G01N21/658

Abstract: Methods and systems for nanopillar sensors are described. Nanopillars can be defined on a substrate, and metal deposited on the nanopillars. A thermal treatment can reflow the metal on the nanopillars forming metallic bulbs on the top end of the nanopillars. These structures can have enhanced optical detection when functionalized with biological agents, or can detect gases, particles and liquids through interaction with the metal layer on the nanopillars.

公开(公告)号：US10603650B2

公开(公告)日：2020-03-31

申请号：US16222865

申请日：2018-12-17

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Sameer Walavalkar ,  Axel Scherer

IPC: B01J19/00 ,  G01N21/65 ,  C12Q1/689

Abstract: Methods and systems for nanopillar sensors are described. Nanopillars can be defined on a substrate, and metal deposited on the nanopillars. A thermal treatment can reflow the metal on the nanopillars forming metallic bulbs on the top end of the nanopillars. These structures can have enhanced optical detection when functionalized with biological agents, or can detect gases, particles and liquids through interaction with the metal layer on the nanopillars.

公开(公告)号：US10366856B2

公开(公告)日：2019-07-30

申请号：US15442408

申请日：2017-02-24

Applicant: California Institute of Technology

Inventor： Axel Scherer ,  William M. Jones ,  Danil M. Lukin ,  Sameer Walavalkar ,  Chieh-feng Chang

IPC: H01J19/24 ,  H01J9/02 ,  H01J21/02

Abstract: Nanoscale field-emission devices are presented, wherein the devices include at least a pair of electrodes separated by a gap through which field emission of electrons from one electrode to the other occurs. The gap is dimensioned such that only a low voltage is required to induce field emission. As a result, the emitted electrons energy that is below the ionization potential of the gas or gasses that reside within the gap. In some embodiments, the gap is small enough that the distance between the electrodes is shorter than the mean-free path of electrons in air at atmospheric pressure. As a result, the field-emission devices do not require a vacuum environment for operation.

公开(公告)号：US09618477B2

公开(公告)日：2017-04-11

申请号：US13967108

申请日：2013-08-14

Applicant: California Institute of Technology

Inventor： Sameer Walavalkar ,  Axel Scherer ,  Thomas A. Tombrello ,  Aditya Rajagopal ,  Andrew P. Homyk ,  Erika Garcia

IPC: G01N27/447 ,  C12Q1/68 ,  G01N33/487 ,  B82Y30/00

CPC classification number: G01N27/447 ,  B82Y30/00 ,  C12Q1/6869 ,  G01N33/48721 ,  C12Q2563/116 ,  C12Q2565/631

Abstract: Methods and devices for sequencing nucleic acids are disclosed herein. Devices are also provided herein for measuring DNA with nano-pores sized to allow DNA to pass through the nano-pore. The capacitance can be measured for the DNA molecule passing through the nano-pore. The capacitance measurements can be correlated to determine the sequence of base pairs passing through the nano-pore to sequence the DNA.

公开(公告)号：US09524900B2

公开(公告)日：2016-12-20

申请号：US14186839

申请日：2014-02-21

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Sameer Walavalkar ,  Mark D. Goldberg ,  Axel Scherer

IPC: H01L21/00 ,  H01L21/762

CPC classification number: H01L21/76283 ,  H01L21/762

Abstract: Novel methods to fabricate biological sensors and electronics are disclosed. A silicon-on-insulator wafer can be employed by etching a pattern of holes in the silicon layer, then a pattern of cavities in the insulating layer, and then sealing the top of the cavities. Further, n or p doped regions and metallic regions can be defined in the processed wafer, thereby enabling integration of biological sensing and electronic capabilities in the same wafer.

Abstract translation: 公开了制造生物传感器和电子学的新方法。 可以通过蚀刻硅层中的孔的图案，然后在绝缘层中蚀刻空腔的图案，然后密封空腔的顶部来采用绝缘体上硅晶片。 此外，可以在经处理的晶片中限定n或p个掺杂区域和金属区域，从而使生物感测和电子能力能够集成在相同的晶片中。

公开(公告)号：US09987609B2

公开(公告)日：2018-06-05

申请号：US14621306

申请日：2015-02-12

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Sameer Walavalkar ,  Axel Scherer

IPC: B01J19/00 ,  G01N21/65 ,  C12Q1/68

CPC classification number: B01J19/0046 ,  B01J2219/00585 ,  C12Q1/689 ,  C12Q2600/158 ,  G01N21/65 ,  G01N21/658

Abstract: Methods and systems for nanopillar sensors are described. Nanopillars can be defined on a substrate, and metal deposited on the nanopillars. A thermal treatment can reflow the metal on the nanopillars forming metallic bulbs on the top end of the nanopillars. These structures can have enhanced optical detection when functionalized with biological agents, or can detect gases, particles and liquids through interaction with the metal layer on the nanopillars.

公开(公告)号：US09390936B2

公开(公告)日：2016-07-12

申请号：US14527039

申请日：2014-10-29

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY ,  Stephanie Tombrello

Inventor： Michael D. Henry ,  Andrew P. Homyk ,  Axel Scherer ,  Thomas A. Tombrello ,  Sameer Walavalkar

IPC: G01N1/18 ,  H01L21/308 ,  B81C1/00 ,  H01L21/3065 ,  G01N1/40

CPC classification number: B81C1/00111 ,  B01J19/0046 ,  B01J2219/00504 ,  B01J2219/00664 ,  B81B1/006 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  G01N1/405 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3086 ,  Y10T436/25375

Abstract: Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.

公开(公告)号：US08841712B2

公开(公告)日：2014-09-23

申请号：US13852480

申请日：2013-03-28

Applicant: California Institute of Technology

Inventor： Aditya Rajagopal ,  Axel Scherer ,  Michael D. Henry ,  Sameer Walavalkar ,  Thomas A. Tombrello ,  Andrew P. Homyk

IPC: H01L29/76 ,  G01N27/327 ,  H01L29/66 ,  H01L29/78

CPC classification number: C12Q1/02 ,  A61B5/04001 ,  G01N27/3275 ,  G01N27/4146 ,  G01R1/06711 ,  G01R1/07342 ,  H01L29/413 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7831

Abstract: A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar transistor allows for advantageous insertion into cellular membranes, and the biomimitec character of the gate element operates as an advantageous interface for sensing small amplitude voltages such as transmembrane cell potentials. The nano-pillar transistor can be used in various embodiments to stimulate cells, to measure cell response, or to perform a combination of both actions.

Abstract translation: 场效应纳米柱晶体管具有结合有生物医学部分的柱形门元件，其提供了优于现有技术器件的各种优点。 纳米柱晶体管的小尺寸允许有利地插入到细胞膜中，并且栅极元件的生物学特性作为用于感测小幅度电压（例如跨膜电池电位）的有利接口。 纳米柱晶体管可用于各种实施例中以刺激细胞，测量细胞反应或执行两种动作的组合。

公开(公告)号：US10189001B2

公开(公告)日：2019-01-29

申请号：US15967543

申请日：2018-04-30

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Sameer Walavalkar ,  Axel Scherer

IPC: B01J19/00 ,  G01N21/65 ,  C12Q1/689

Abstract: Methods and systems for nanopillar sensors are described. Nanopillars can be defined on a substrate, and metal deposited on the nanopillars. A thermal treatment can reflow the metal on the nanopillars forming metallic bulbs on the top end of the nanopillars. These structures can have enhanced optical detection when functionalized with biological agents, or can detect gases, particles and liquids through interaction with the metal layer on the nanopillars.

公开(公告)号：US09234872B2

公开(公告)日：2016-01-12

申请号：US14673700

申请日：2015-03-30

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Andrew P. Homyk ,  Michael D. Henry ,  Axel Scherer ,  Sameer Walavalkar

IPC: H01L29/772 ,  H01L29/02 ,  G01N27/414 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/775 ,  H01L29/66 ,  B82Y15/00

CPC classification number: G01N27/4146 ,  B82Y10/00 ,  B82Y15/00 ,  H01L29/0676 ,  H01L29/66666 ,  H01L29/775

Abstract: Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in a fluid are described. Devices may comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.