Invention Grant
- Patent Title: Nanoscale field-emission device and method of fabrication
-
Application No.: US15442408Application Date: 2017-02-24
-
Publication No.: US10366856B2Publication Date: 2019-07-30
- Inventor: Axel Scherer , William M. Jones , Danil M. Lukin , Sameer Walavalkar , Chieh-feng Chang
- Applicant: California Institute of Technology
- Applicant Address: US CA Pasadena
- Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
- Current Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
- Current Assignee Address: US CA Pasadena
- Agency: Kaplan Breyer Schwarz, LLP
- Main IPC: H01J19/24
- IPC: H01J19/24 ; H01J9/02 ; H01J21/02

Abstract:
Nanoscale field-emission devices are presented, wherein the devices include at least a pair of electrodes separated by a gap through which field emission of electrons from one electrode to the other occurs. The gap is dimensioned such that only a low voltage is required to induce field emission. As a result, the emitted electrons energy that is below the ionization potential of the gas or gasses that reside within the gap. In some embodiments, the gap is small enough that the distance between the electrodes is shorter than the mean-free path of electrons in air at atmospheric pressure. As a result, the field-emission devices do not require a vacuum environment for operation.
Public/Granted literature
- US20170250048A1 Nanoscale Field-Emission Device and Method of Fabrication Public/Granted day:2017-08-31
Information query