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公开(公告)号：US20230268444A1
公开(公告)日：2023-08-24
申请号：US17922034
申请日：2021-11-02
发明人： Guangcai YUAN , Linfeng LAN , Fengjuan LIU , Ce NING , Hehe HU , Fei WANG , Junbiao PENG
IPC分类号： H01L29/786 , H01L29/24 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/66969
摘要： A metal oxide semiconductor material includes a semiconductor base material and at least one kind of rare earth compound doped in the semiconductor base material, Each kind of rare earth compound has a general formula represented as (MFD)aAb, where in s the general formula (MFD)aAb, MFD is an element selected from rare earth elements capable of undergoing f-d transition and/or charge transfer transition, A is selected from elements capable of stretching a wavelength range of an absorption spectrum of MFD capable of undergoing the f-d transition and/or the charge transfer transition towards red light into a visible light range, a is a number of the element MFD in the general formula (MFD)aAb, and b is a number of the element A in the general formula (MFD)aAb.
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公开(公告)号：US20240234532A1
公开(公告)日：2024-07-11
申请号：US17925222
申请日：2021-12-27
发明人： Hehe HU , Dongfang WANG , Fengjuan LIU , Ce NING , Zhengliang LI , Jiayu HE , Yan QU , Kun ZHAO , Jie HUANG , Liping LEI , Yunsik IM , Shunhang ZHANG , Nianqi YAO , Feifei LI
IPC分类号： H01L29/43 , H01L27/12 , H01L29/417 , H01L29/66
CPC分类号： H01L29/435 , H01L27/1214 , H01L29/41733 , H01L29/66742
摘要： The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.
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公开(公告)号：US20240097042A1
公开(公告)日：2024-03-21
申请号：US17781773
申请日：2021-06-25
发明人： Lizhong WANG , Guangcai YUAN , Ce NING , Nianqi YAO , Hehe HU , Liping LEI , Dongfang WANG , Dapeng XUE , Shuilang DONG , Zhengliang LI
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/42384 , H01L29/66742
摘要： At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.
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公开(公告)号：US20230178562A1
公开(公告)日：2023-06-08
申请号：US18103355
申请日：2023-01-30
发明人： Lizhong WANG , Tianmin ZHOU , Hehe HU , Shuilang DONG , Wenhua WANG , Nianqi YAO
IPC分类号： H01L27/12
CPC分类号： H01L27/1225
摘要： A thin film transistor includes an active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the active layer perpendicular to a thickness direction of the active layer, and is in contact with the active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material. A porosity of the first loose layer is different from a porosity of the first oxygen release layer, and/or an oxygen content of the first loose layer is different from an oxygen content of the first oxygen release layer.
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公开(公告)号：US20230036385A1
公开(公告)日：2023-02-02
申请号：US17772689
申请日：2021-06-24
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Xue LIU , Zhi WANG , Feng GUAN
IPC分类号： H01L29/786 , H01L29/06 , H01L29/66
摘要： The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.
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6.发明公开公开(公告)号：US20240361628A1
公开(公告)日：2024-10-31
申请号：US18768052
申请日：2024-07-10
发明人： Guangcai YUAN , Hehe HU , Changhan HSIEH , Shipei LI , Jiayu HE , Xin GU , Ce NING , Zhengliang LI
IPC分类号： G02F1/133 , G02F1/1335 , G06F1/16 , H10K30/88
CPC分类号： G02F1/13318 , G02F1/133509 , G06F1/1652 , H10K30/88
摘要： A photodetection backplane, a liquid crystal display panel and a liquid crystal display apparatus are provided. The photodetection backplane includes: a base substrate; a first organic switching unit arranged at a side of the base substrate; and an organic photodetector arranged at a same side of the base substrate as the first organic switching unit. The organic photodetector is electrically connected to the first organic switching unit, and at least one film layer of the organic photodetector and a film layer of the first organic switching unit are arranged in a same layer and made of a same material.
(FIG. 1)-
7.发明公开公开(公告)号：US20240297243A1
公开(公告)日：2024-09-05
申请号：US18026833
申请日：2022-05-27
发明人： Jiayu HE , Yan QU , Ce NING , Hehe HU , Zhengliang LI , Nianqi YAO , Jie HUANG , Kun ZHAO , Feifei LI , Liping LEI
IPC分类号： H01L29/739 , H01L27/092 , H01L29/08 , H01L29/165 , H01L29/66 , H01L29/73
CPC分类号： H01L29/7391 , H01L27/092 , H01L29/0847 , H01L29/165 , H01L29/66356 , H01L29/7311
摘要： A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.
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8.发明公开公开(公告)号：US20240234658A1
公开(公告)日：2024-07-11
申请号：US17927792
申请日：2021-12-29
发明人： Jiayu HE , Yan QU , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI , Qi QI
IPC分类号： H01L33/62 , H01L25/075 , H01L25/16 , H01L27/12
CPC分类号： H01L33/62 , H01L25/0753 , H01L25/167 , H01L27/124
摘要： A wiring board includes a substrate, conductive pads and at least one protective layer group. The conductive pads are disposed on the substrate. The at least one protective layer group is disposed on a side of the conductive pads away from the substrate; a protective layer group includes an oxidation protective layer and a palladium alloy layer that are stacked, and the oxidation protective layer is closer to the substrate than the palladium alloy layer. A material of the oxidation protective layer includes a nickel-based alloy.
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公开(公告)号：US20240204004A1
公开(公告)日：2024-06-20
申请号：US17910133
申请日：2021-12-27
发明人： Hehe HU , Yan QU , Jiayu HE , Kun ZHAO , Jie HUANG , Zhengliang LI , Ce NING , Dongfang WANG , Fengjuan LIU , Nianqi YAO , Feifei LI , Shunhang ZHANG , Yunsik IM , Liping LEI
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L27/1259 , H01L27/1222
摘要： Provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. The thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode. Specifically the active layer includes a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to an extending direction of the gate electrode. According to the embodiments of the present disclosure, the illumination stability of the thin-film transistor can be improved without reducing the transmittance of the substrate.
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公开(公告)号：US20240188373A1
公开(公告)日：2024-06-06
申请号：US17795243
申请日：2021-09-30
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI , Liping LEI , Qi QI
IPC分类号： H10K59/65 , H10K59/12 , H10K59/121 , H10K59/80 , H10K71/00
CPC分类号： H10K59/65 , H10K59/1201 , H10K59/1213 , H10K59/874 , H10K71/00
摘要： Provided is a display substrate including a substrate and a plurality of light emitting units and a plurality of light detection units located on the substrate, At least one light emitting unit includes a light emitting element and a pixel circuit connected to the light emitting element, and at least one light detection unit includes an optical sensing element and a light emitting detecting circuit connected to the optical sensing element. At least one inorganic hydrogen barrier layer is arranged on one side of the optical sensing element close to the substrate. The light emitting element has a first light emitting region and a second light emitting region, the first light emitting region of the light emitting element emits light from a side away from the substrate, and the second light emitting region of the light emitting element emits light from a side close to the substrate.
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