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公开(公告)号：US20230268444A1
公开(公告)日：2023-08-24
申请号：US17922034
申请日：2021-11-02
发明人： Guangcai YUAN , Linfeng LAN , Fengjuan LIU , Ce NING , Hehe HU , Fei WANG , Junbiao PENG
IPC分类号： H01L29/786 , H01L29/24 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/66969
摘要： A metal oxide semiconductor material includes a semiconductor base material and at least one kind of rare earth compound doped in the semiconductor base material, Each kind of rare earth compound has a general formula represented as (MFD)aAb, where in s the general formula (MFD)aAb, MFD is an element selected from rare earth elements capable of undergoing f-d transition and/or charge transfer transition, A is selected from elements capable of stretching a wavelength range of an absorption spectrum of MFD capable of undergoing the f-d transition and/or the charge transfer transition towards red light into a visible light range, a is a number of the element MFD in the general formula (MFD)aAb, and b is a number of the element A in the general formula (MFD)aAb.
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公开(公告)号：US20240297256A1
公开(公告)日：2024-09-05
申请号：US17919387
申请日：2021-11-29
发明人： Dongfang WANG , Lizhong WANG , Ce NING
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/6675 , H01L29/78633
摘要： An array base plate includes a substrate; and a driving transistor and a switching transistor that are located on the substrate; the driving transistor includes a semiconductor layer; the switching transistor includes an active layer and a protecting layer, and the active layer includes two opposite main surfaces and a side surface that is located between outer contours of the two main surfaces; the protecting layer is located on a main surface of the active layer that is away from the substrate and covers the main surface and the side surface; the protecting layer and the semiconductor layer are arranged in a same layer, and a material of the protecting layer and a material of the semiconductor layer are a same metal-oxide-semiconductor material; and a carrier mobility of the protecting layer is less than a carrier mobility of the active layer.
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公开(公告)号：US20240290890A1
公开(公告)日：2024-08-29
申请号：US18023766
申请日：2022-03-31
发明人： Dongfang WANG , Lizhong WANG , Ce NING
IPC分类号： H01L29/786 , H01L29/417
CPC分类号： H01L29/7869 , H01L29/41733
摘要： A thin film transistor including a base substrate, and a drain, a source and an active layer on the base substrate, where the drain and the source are in different layers, respectively, and any two of an orthographic projection of the drain on the base substrate, an orthographic projection of the source on the base substrate and an orthographic projection of the active layer on the base substrate at least partially overlap each other.
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公开(公告)号：US20240234532A1
公开(公告)日：2024-07-11
申请号：US17925222
申请日：2021-12-27
发明人： Hehe HU , Dongfang WANG , Fengjuan LIU , Ce NING , Zhengliang LI , Jiayu HE , Yan QU , Kun ZHAO , Jie HUANG , Liping LEI , Yunsik IM , Shunhang ZHANG , Nianqi YAO , Feifei LI
IPC分类号： H01L29/43 , H01L27/12 , H01L29/417 , H01L29/66
CPC分类号： H01L29/435 , H01L27/1214 , H01L29/41733 , H01L29/66742
摘要： The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.
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5.发明公开公开(公告)号：US20240212773A1
公开(公告)日：2024-06-27
申请号：US17909129
申请日：2021-10-25
发明人： Fengjuan LIU , Ce NING , Wei LIU , Dini XIE , Yuhang LU
CPC分类号： G11C19/28 , G09G3/2092 , G09G2300/0842 , G09G2310/0267 , G09G2310/0286
摘要： The present disclosure provides a shift register unit, and driving method therefor, a gate drive circuit, and a display device, belonging to the field of display technologies. The shift register unit includes an input circuit, a compensation control circuit, and an output circuit. The input circuit can control a potential of a first node under control of an input signal provided by an input signal terminal and control a potential of a reference node under control of the input signal and an input control signal provided by an input control terminal. The compensation control circuit can adjust the potential of the first node based on the potential of the reference node under control of a first clock signal provided by a first clock signal terminal. In this way, the flexibility of controlling the first node is improved. Thus, the output circuit can flexibly output a drive signal to an output terminal coupled to a gate line under control of the first node.
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公开(公告)号：US20240097042A1
公开(公告)日：2024-03-21
申请号：US17781773
申请日：2021-06-25
发明人： Lizhong WANG , Guangcai YUAN , Ce NING , Nianqi YAO , Hehe HU , Liping LEI , Dongfang WANG , Dapeng XUE , Shuilang DONG , Zhengliang LI
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/42384 , H01L29/66742
摘要： At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.
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7.发明公开公开(公告)号：US20240092628A1
公开(公告)日：2024-03-21
申请号：US18517694
申请日：2023-11-22
发明人： Xiaochen MA , Guangcai YUAN , Ce NING , Xin GU , Xiao ZHANG , Chao LI
CPC分类号： B81B1/002 , B01L3/502715 , B81C1/00071 , B01L2300/0645 , B81B2201/05 , B81B2203/0338 , B81C2201/0111 , B81C2201/036
摘要： A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate. The micro-nano channels have a high resolution or an ultra-high resolution, and have different sizes and shapes.
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公开(公告)号：US20230036385A1
公开(公告)日：2023-02-02
申请号：US17772689
申请日：2021-06-24
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Xue LIU , Zhi WANG , Feng GUAN
IPC分类号： H01L29/786 , H01L29/06 , H01L29/66
摘要： The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.
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公开(公告)号：US20220126294A1
公开(公告)日：2022-04-28
申请号：US17432580
申请日：2021-01-22
发明人： Xiaochen MA , Ce NING , Guangcai YUAN , Xin GU , Zhengliang LI
摘要： A biochip and a method for manufacturing the same are provided. The biochip includes: a guide layer; a channel layer on the guide layer, wherein the channel layer has therein a plurality of first channels extending in a first direction; a plurality of second channels extending in a second direction, wherein each of the plurality of second channels is in communication with the plurality of first channels, the plurality of second channels are in a layer where the channel layer is located, or in a layer where the channel layer and the guide layer are located; an encapsulation cover plate on a side of the channel layer distal to the guide layer; and a driving unit configured to drive biomolecules to move.
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公开(公告)号：US20210229088A1
公开(公告)日：2021-07-29
申请号：US16643464
申请日：2019-03-11
发明人： Xiaochen MA , Guangcai YUAN , Ce NING , Zhengliang LI
摘要： A microfluidic channel and a preparation method and an operation method thereof. The microfluidic channel includes: a channel structure, including a channel for a liquid sample to flow through and a channel wall surrounding the channel. The channel wall includes an electrolyte layer made of an electrolyte material; and a control electrode layer, at a side of the electrolyte layer away from the channel. The control electrode layer overlaps with the electrolyte layer with respect to the channel.
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