知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

12 records (took 0.025 seconds)

    Stabilization of GMR devices
    1.
    发明授权
    Stabilization of GMR devices 有权
    GMR设备的稳定

    公开(公告)号：US06455177B1

    公开(公告)日：2002-09-24

    申请号：US09454085

    申请日：1999-12-03

    Applicant: Brenda A. Everitt ,  Arthur V. Pohm

    Inventor： Brenda A. Everitt ,  Arthur V. Pohm

    IPC: B32B900

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3941 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01L43/08 ,  Y10T428/1129 ,  Y10T428/12507 ,  Y10T428/12514

    Abstract: A stabilized GMR device includes a GMR stack having a first and a second edge. Stabilization means are positioned adjacent to the first and the second edge of the GMR stack for stabilizing the GMR stack. The GMR stack includes a first layer of ferromagnetic material and a second layer of ferromagnetic material. A spacer layer is positioned between the first and the second ferromagnetic layers. A buffer layer is positioned adjacent to the first magnetic layer and a cap layer is positioned adjacent to the second ferromagnetic layer. The stabilization means include a first coupler layer positioned adjacent to the first edge of the GMR stack and a second coupler layer positioned adjacent to the second edge of the GMR stack. The stabilization means also include a first ferromagnetic layer positioned adjacent to the first coupler layer and a second ferromagnetic layer positioned adjacent to the second coupler layer.

    Abstract translation: 稳定的GMR装置包括具有第一和第二边缘的GMR堆叠。 稳定装置位于与GMR堆叠的第一和第二边缘相邻以用于稳定GMR堆叠。 GMR堆叠包括第一层铁磁材料层和第二层铁磁材料层。 间隔层位于第一和第二铁磁层之间。 缓冲层定位成与第一磁性层相邻，并且盖层定位成与第二铁磁层相邻。 稳定装置包括邻近GMR堆叠的第一边缘定位的第一耦合器层和邻近GMR堆叠的第二边缘定位的第二耦合器层。 稳定装置还包括邻近第一耦合器层定位的第一铁磁层和邻近第二耦合层定位的第二铁磁层。

    Giant magnetoresistive effect memory cell
    4.
    发明授权
    Giant magnetoresistive effect memory cell 失效
    巨磁阻效应记忆体

    公开(公告)号：US5966322A

    公开(公告)日：1999-10-12

    申请号：US923478

    申请日：1997-09-04

    Applicant: Arthur V. Pohm ,  Brenda A. Everitt

    Inventor： Arthur V. Pohm ,  Brenda A. Everitt

    IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/20 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC classification number: H01L27/222 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/20 ,  H01F10/205

    Abstract: A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations. Bit structures can be fabricated with further alternating intermediate separating, material layers and varied thickness ferromagnetic thin-film layers, and a configuration thereof can be provided for use as an isolated memory cell.

    Abstract translation: 一种数字数据存储器，其具有基于中间分离材料的存储单元中的位结构，其中两个主表面具有不同厚度的磁阻各向异性铁磁薄膜。 这些位结构在结构范围限制内制造，令人满意地工作，并且被制造为存储线结构的串联连接构件。 在数据存储和检索操作中，使用与这些存储器单元相对应的相应的导电字线结构来选择或操作它们，或两者。 位结构可以用另外交替的中间分离，材料层和不同厚度的铁磁性薄膜层制造，并且其结构可以被提供用作隔离存储单元。

    Stabilization of GMR devices
    5.
    发明授权
    Stabilization of GMR devices 有权
    GMR设备的稳定

    公开(公告)号：US06709696B2

    公开(公告)日：2004-03-23

    申请号：US10179119

    申请日：2002-06-25

    Applicant: Brenda A. Everitt ,  Arthur V. Pohm

    Inventor： Brenda A. Everitt ,  Arthur V. Pohm

    IPC: B05D512

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3941 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01L43/08 ,  Y10T428/1129 ,  Y10T428/12507 ,  Y10T428/12514

    Abstract: A stabilized GMR device includes a GMR stack having a first and a second edge. Stabilization means are positioned adjacent to the first and the second edge of the GMR stack for stabilizing the GMR stack. The GMR stack includes a first layer of ferromagnetic material and a second layer of ferromagnetic material. A spacer layer is positioned between the first and the second ferromagnetic layers. A buffer layer is positioned adjacent to the first magnetic layer and a cap layer is positioned adjacent to the second ferromagnetic layer. The stabilization means include a first coupler layer positioned adjacent to the first edge of the GMR stack and a second coupler layer positioned adjacent to the second edge of the GMR stack. The stabilization means also include a first ferromagnetic layer positioned adjacent to the first coupler layer and a second ferromagnetic layer positioned adjacent to the second coupler layer.

    Abstract translation: 稳定的GMR装置包括具有第一和第二边缘的GMR堆叠。 稳定装置位于与GMR堆叠的第一和第二边缘相邻以用于稳定GMR堆叠。 GMR堆叠包括第一层铁磁材料层和第二层铁磁材料层。 间隔层位于第一和第二铁磁层之间。 缓冲层定位成与第一磁性层相邻，并且盖层定位成与第二铁磁层相邻。 稳定装置包括邻近GMR堆叠的第一边缘定位的第一耦合器层和邻近GMR堆叠的第二边缘定位的第二耦合器层。 稳定装置还包括邻近第一耦合器层定位的第一铁磁层和邻近第二耦合层定位的第二铁磁层。

    Giant magnetoresistive effect memory cell
    7.
    发明授权
    Giant magnetoresistive effect memory cell 失效
    巨磁阻效应记忆体

    公开(公告)号：US5949707A

    公开(公告)日：1999-09-07

    申请号：US704315

    申请日：1996-09-06

    Applicant: Arthur V. Pohm ,  Brenda A. Everitt

    Inventor： Arthur V. Pohm ,  Brenda A. Everitt

    IPC: G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/20 ,  G11C11/00

    CPC classification number: H01L27/222 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/20 ,  H01F10/205

    Abstract: A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

    Abstract translation: 一种数字数据存储器，其具有基于中间分离材料的存储单元中的位结构，其中两个主表面具有不同厚度的磁阻各向异性铁磁薄膜。 这些位结构在结构范围限制内制造，令人满意地工作，并且被制造为存储线结构的串联连接构件。 在数据存储和检索操作中，使用与这些存储器单元相对应的相应的导电字线结构来选择或操作它们，或两者。

    Storage system having read head utilizing GMR and AMr effects
    8.
    发明授权
    Storage system having read head utilizing GMR and AMr effects 失效
    具有读取头的存储系统利用GMR和AMr效应

    公开(公告)号：US06356420B1

    公开(公告)日：2002-03-12

    申请号：US09174021

    申请日：1998-10-16

    Applicant: Brenda A. Everitt

    Inventor： Brenda A. Everitt

    IPC: G11B539

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/3996

    Abstract: A data storage system includes a storage medium having a data surface with data storage thereon, the stored data comprises variations in magnetic fields across the data surface. A magnetoresistive sensor exhibits both giant magnetoresistive (GMR) and anisotropic magnetoresistive (AMR) effects which are used to read back the stored data.

    Abstract translation: 数据存储系统包括具有其上具有数据存储的数据表面的存储介质，所存储的数据包括跨数据表面的磁场的变化。 磁阻传感器表现出用于回读存储数据的巨磁阻（GMR）和各向异性磁阻（AMR）效应。

    Method of fabricating a spin valve/GMR sensor having a synthetic antiferromagnetic layer pinned by Mn-alloy
    9.
    发明授权
    Method of fabricating a spin valve/GMR sensor having a synthetic antiferromagnetic layer pinned by Mn-alloy 有权
    制造具有由Mn合金固定的合成反铁磁层的自旋阀/ GMR传感器的方法

    公开(公告)号：US06548114B2

    公开(公告)日：2003-04-15

    申请号：US09907219

    申请日：2001-07-17

    Applicant: Sining Mao ,  Anthony M. Mack ,  Brenda A. Everitt ,  Edward S. Murdock ,  Zheng Gao

    Inventor： Sining Mao ,  Anthony M. Mack ,  Brenda A. Everitt ,  Edward S. Murdock ,  Zheng Gao

    IPC: C23C1606

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10S977/934 ,  Y10T29/49046

    Abstract: A method of fabricating a spin valve sensor includes sequentially depositing, without breaking vacuum, a seed layer and an antiferromagnetic layer. Sequentially depositing the seed layer and the antiferromagnetic layer includes depositing a seed layer on a substrate; depositing a Mn-alloy layer of the antiferromagnetic layer directly on top of the seed layer; and depositing a buffer layer of the antiferromagnetic layer directly on top of the Mn-alloy layer. The seed layer, the Mn-alloy layer and the buffer layer are annealed. After annealing, a portion of the buffer layer is etched and a synthetic antiferromagnetic layer is deposited on top of the buffer layer. A spacer layer is deposited on top of the synthetic antiferromagnetic layer, and a free layer is deposited on top of the spacer layer.

    Abstract translation: 制造自旋阀传感器的方法包括在不破坏真空的情况下依次沉积种子层和反铁磁性层。 顺序地沉积种子层和反铁磁性层包括将种子层沉积在基底上; 将反铁磁层的Mn合金层直接沉积在种子层的顶部; 并将反铁磁层的缓冲层直接沉积在Mn合金层的顶部上。 种子层，Mn合金层和缓冲层退火。 在退火之后，缓冲层的一部分被蚀刻，并且合成的反铁磁层沉积在缓冲层的顶部上。 间隔层沉积在合成反铁磁性层的顶部上，并且自由层沉积在间隔层的顶部上。

Patent Agency Ranking