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    Giant magnetoresistive effect memory cell
    1.
    发明授权
    Giant magnetoresistive effect memory cell 失效
    巨磁阻效应记忆体

    公开(公告)号：US5966322A

    公开(公告)日：1999-10-12

    申请号：US923478

    申请日：1997-09-04

    Applicant: Arthur V. Pohm ,  Brenda A. Everitt

    Inventor： Arthur V. Pohm ,  Brenda A. Everitt

    IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/20 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC classification number: H01L27/222 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/20 ,  H01F10/205

    Abstract: A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations. Bit structures can be fabricated with further alternating intermediate separating, material layers and varied thickness ferromagnetic thin-film layers, and a configuration thereof can be provided for use as an isolated memory cell.

    Abstract translation: 一种数字数据存储器，其具有基于中间分离材料的存储单元中的位结构，其中两个主表面具有不同厚度的磁阻各向异性铁磁薄膜。 这些位结构在结构范围限制内制造，令人满意地工作，并且被制造为存储线结构的串联连接构件。 在数据存储和检索操作中，使用与这些存储器单元相对应的相应的导电字线结构来选择或操作它们，或两者。 位结构可以用另外交替的中间分离，材料层和不同厚度的铁磁性薄膜层制造，并且其结构可以被提供用作隔离存储单元。

    Stabilization of GMR devices
    2.
    发明授权
    Stabilization of GMR devices 有权
    GMR设备的稳定

    公开(公告)号：US06455177B1

    公开(公告)日：2002-09-24

    申请号：US09454085

    申请日：1999-12-03

    Applicant: Brenda A. Everitt ,  Arthur V. Pohm

    Inventor： Brenda A. Everitt ,  Arthur V. Pohm

    IPC: B32B900

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3941 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01L43/08 ,  Y10T428/1129 ,  Y10T428/12507 ,  Y10T428/12514

    Abstract: A stabilized GMR device includes a GMR stack having a first and a second edge. Stabilization means are positioned adjacent to the first and the second edge of the GMR stack for stabilizing the GMR stack. The GMR stack includes a first layer of ferromagnetic material and a second layer of ferromagnetic material. A spacer layer is positioned between the first and the second ferromagnetic layers. A buffer layer is positioned adjacent to the first magnetic layer and a cap layer is positioned adjacent to the second ferromagnetic layer. The stabilization means include a first coupler layer positioned adjacent to the first edge of the GMR stack and a second coupler layer positioned adjacent to the second edge of the GMR stack. The stabilization means also include a first ferromagnetic layer positioned adjacent to the first coupler layer and a second ferromagnetic layer positioned adjacent to the second coupler layer.

    Abstract translation: 稳定的GMR装置包括具有第一和第二边缘的GMR堆叠。 稳定装置位于与GMR堆叠的第一和第二边缘相邻以用于稳定GMR堆叠。 GMR堆叠包括第一层铁磁材料层和第二层铁磁材料层。 间隔层位于第一和第二铁磁层之间。 缓冲层定位成与第一磁性层相邻，并且盖层定位成与第二铁磁层相邻。 稳定装置包括邻近GMR堆叠的第一边缘定位的第一耦合器层和邻近GMR堆叠的第二边缘定位的第二耦合器层。 稳定装置还包括邻近第一耦合器层定位的第一铁磁层和邻近第二耦合层定位的第二铁磁层。

    Stabilization of GMR devices
    5.
    发明授权
    Stabilization of GMR devices 有权
    GMR设备的稳定

    公开(公告)号：US06709696B2

    公开(公告)日：2004-03-23

    申请号：US10179119

    申请日：2002-06-25

    Applicant: Brenda A. Everitt ,  Arthur V. Pohm

    Inventor： Brenda A. Everitt ,  Arthur V. Pohm

    IPC: B05D512

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3941 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01L43/08 ,  Y10T428/1129 ,  Y10T428/12507 ,  Y10T428/12514

    Abstract: A stabilized GMR device includes a GMR stack having a first and a second edge. Stabilization means are positioned adjacent to the first and the second edge of the GMR stack for stabilizing the GMR stack. The GMR stack includes a first layer of ferromagnetic material and a second layer of ferromagnetic material. A spacer layer is positioned between the first and the second ferromagnetic layers. A buffer layer is positioned adjacent to the first magnetic layer and a cap layer is positioned adjacent to the second ferromagnetic layer. The stabilization means include a first coupler layer positioned adjacent to the first edge of the GMR stack and a second coupler layer positioned adjacent to the second edge of the GMR stack. The stabilization means also include a first ferromagnetic layer positioned adjacent to the first coupler layer and a second ferromagnetic layer positioned adjacent to the second coupler layer.

    Abstract translation: 稳定的GMR装置包括具有第一和第二边缘的GMR堆叠。 稳定装置位于与GMR堆叠的第一和第二边缘相邻以用于稳定GMR堆叠。 GMR堆叠包括第一层铁磁材料层和第二层铁磁材料层。 间隔层位于第一和第二铁磁层之间。 缓冲层定位成与第一磁性层相邻，并且盖层定位成与第二铁磁层相邻。 稳定装置包括邻近GMR堆叠的第一边缘定位的第一耦合器层和邻近GMR堆叠的第二边缘定位的第二耦合器层。 稳定装置还包括邻近第一耦合器层定位的第一铁磁层和邻近第二耦合层定位的第二铁磁层。

    Giant magnetoresistive effect memory cell
    7.
    发明授权
    Giant magnetoresistive effect memory cell 失效
    巨磁阻效应记忆体

    公开(公告)号：US5949707A

    公开(公告)日：1999-09-07

    申请号：US704315

    申请日：1996-09-06

    Applicant: Arthur V. Pohm ,  Brenda A. Everitt

    Inventor： Arthur V. Pohm ,  Brenda A. Everitt

    IPC: G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/20 ,  G11C11/00

    CPC classification number: H01L27/222 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/20 ,  H01F10/205

    Abstract: A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

    Abstract translation: 一种数字数据存储器，其具有基于中间分离材料的存储单元中的位结构，其中两个主表面具有不同厚度的磁阻各向异性铁磁薄膜。 这些位结构在结构范围限制内制造，令人满意地工作，并且被制造为存储线结构的串联连接构件。 在数据存储和检索操作中，使用与这些存储器单元相对应的相应的导电字线结构来选择或操作它们，或两者。

    Magnetic memory layers thermal pulse transitions
    8.
    发明授权
    Magnetic memory layers thermal pulse transitions 有权
    磁存储层热脉冲过渡

    公开(公告)号：US07813165B2

    公开(公告)日：2010-10-12

    申请号：US11881097

    申请日：2007-07-25

    Applicant: James M. Daughton ,  Arthur V. Pohm

    Inventor： James M. Daughton ,  Arthur V. Pohm

    IPC: G11C5/06 ,  G11C5/08 ,  G11C11/02 ,  G11C11/14 ,  G11C11/15

    CPC classification number: G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

    Abstract: A ferromagnetic thin-film based digital memory having bit structures therein with a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

    Abstract translation: 一种基于铁磁性薄膜的数字存储器，其具有位结构，具有磁性材料膜，其磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构， 在相应的一个位结构中位于磁性材料膜两侧的加热部分。 这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。 这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。

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