Abstract:
A magnetic recording head having an air bearing surface comprises a writer having a substantially planar single piece top pole, a shared pole and a conductive coil. The top pole and shared pole are separated by a write gap region. A magnetic stud is positioned adjacent the write gap region near the air bearing surface. The magnetic stud provides a uniform magnetic flux supply to the write gap region. The magnetic stud has a variable height along the air bearing surface. An inner surface of the magnetic stud substantially conforms to an outer surface of the conductive coil. The shared pole includes a recess, and at least a portion of the conductive coil is positioned in the recess. The recess in the shared pole is filled with an insulator that substantially surrounds the portion of the conductive coil positioned in the recess. A capping layer is formed on the portion of the conductive coil positioned in the recess. The shared pole includes a common top surface comprising a top surface of the magnetic stud, a top surface of the insulator and a top surface of the capping layer. The common top surface is made substantially planar by chemical-mechanical polishing.
Abstract:
A spin valve sensor is constructed with an electrically conductive antiferromagnetic pinning layer. A first ferromagnetic layer is placed proximate the pinning layer. A second ferromagnetic layer is included with a non-ferromagnetic electrically conductive layer placed between the first and second ferromagnetic layers. A boundary layer of electrically insulating material is placed proximate to the second layer of ferromagnetic material opposite the non-ferromagnetic electrically conductive layer. Preferred embodiments exhibit an enhanced giant magnetoresistive (GMR) effect presumably due to scattering that is more specular at the interface with the electrically insulating material.
Abstract:
A spin valve sensor and a method of fabricating the same are disclosed. The spin valve sensor includes a first layer of ferromagnetic material and a second layer of ferromagnetic material, with the second layer of ferromagnetic material having a thickness of less than about 100 .ANG.. A first layer of non-ferromagnetic conducting material is positioned between the first and second layers of ferromagnetic material. A NiMn pinning layer is positioned adjacent to the second layer of ferromagnetic material such that the pinning layer is in contact with the second layer of ferromagnetic material, wherein the NiMn pinning layer has a thickness of less than about 200 .ANG. and provides a pinning field for pinning a magnetization of the second layer of ferromagnetic material in a first direction.
Abstract:
Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic. (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact with the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.
Abstract:
A magnetoresistive head assembly includes a magnetoresistive sensor element, detection circuitry and first and second electrical conductors electrically connecting the magnetoresistive sensor element and the detection circuitry. A device exhibiting a non-linear voltage-current relationship is electrically coupled between the first and second electrical conductors. The device has a resistance which varies in relationship to an electrical potential between the first and second electrical conductors.
Abstract:
A spin valve sensor comprising a ferromagnetic free layer, a ferromagnetic pinned layer, a layer of non-ferromagnetic material positioned between the free layer and the pinned layer, and an antitferromagnetic pinning layer positioned adjacent to the pinned layer such that the pinning layer is in direct contact with the pinned layer. The free layer comprises a multi-layer stack including a non-magnetic insulating spacer positioned between a first and a second ferromagnetic sublayer. The non-magnetic insulating spacer provides a specular electron scattering effect. The first and the second ferromagnetic sublayers each have passive end regions separated by a central active region. The spin valve sensor further includes bias means positioned between the first and the second ferromagnetic sublayers in the passive end regions.
Abstract:
A magnetic read head (30) for use in a magnetic data storage and retrieval system has a first current contact (40), a second current contact (42), a magnetoresistive read sensor (34), and a demagnetization field balance element (50). Positioned between the first and second current contacts (40, 42) are both the magnetoresistive read sensor (34) and the demagnetization field balance element (50). The demagnetization field balance element (50) is both electrically isolated from and magnetically coupled to the magnetoresistive read sensor (34).
Abstract:
A giant magnetoresistance recording head includes a writer having a top pole, a shared pole, a conductive coil and a write gap region. The top pole includes a first top pole piece and a second top pole piece. The second top pole piece is formed at least in part over the first top pole piece and is recessed from the air bearing surface. The first top pole piece is formed over a top flat surface of the shared pole and is separated from the shared pole by the write gap region. The shared pole has a recess on the top surface. The recess is placed under the top pole and filled with a non-magnetic material. The non-magnetic recess in the shared pole defines the throat height of the writer.
Abstract:
A spin valve sensor is disclosed that comprises a first layer of ferromagnetic material and a second layer of ferromagnetic material. A first layer of non-ferromagnetic material is positioned between the first and second layers of ferromagnetic material. A pinning layer is positioned adjacent to the first layer of ferromagnetic material such that the pinning layer is in contact with the first layer of ferromagnetic material. The spin valve includes synthetic antiferromagnetic bias means extending over passive end regions of the second layer of ferromagnetic material for producing a longitudinal bias in the passive end regions of a level sufficient to maintain the passive end regions in a single domain state. A method for forming a spin valve sensor with exchange tabs is also disclosed.
Abstract:
A method of fabricating a spin valve sensor includes sequentially depositing, without breaking vacuum, a seed layer and an antiferromagnetic layer. Sequentially depositing the seed layer and the antiferromagnetic layer includes depositing a seed layer on a substrate; depositing a Mn-alloy layer of the antiferromagnetic layer directly on top of the seed layer; and depositing a buffer layer of the antiferromagnetic layer directly on top of the Mn-alloy layer. The seed layer, the Mn-alloy layer and the buffer layer are annealed. After annealing, a portion of the buffer layer is etched and a synthetic antiferromagnetic layer is deposited on top of the buffer layer. A spacer layer is deposited on top of the synthetic antiferromagnetic layer, and a free layer is deposited on top of the spacer layer.