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    PARTICLE GENERATION SUPPRESSPR BY DC BIAS MODULATION
    2.
    发明申请
    PARTICLE GENERATION SUPPRESSPR BY DC BIAS MODULATION 有权
    通过直流偏置调制的颗粒生成SUPPRESSPR

    公开(公告)号：US20150123541A1

    公开(公告)日：2015-05-07

    申请号：US14514930

    申请日：2014-10-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Jonghoon BAEK ,  Soonam PARK ,  Xinglong CHEN ,  Dmitry LUBOMIRSKY

    IPC: H05H1/46 ,  C23C16/52 ,  C23C16/44 ,  C23C16/503 ,  C23C16/509

    CPC classification number: H01J37/32082 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/503 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32697 ,  H01J2237/334

    Abstract: Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, the methods generally includes generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma. Minimizing the electrical potential difference between the plasma and the electrodes reduces particle generation because the acceleration of the ions in the sheath region of the electrodes is reduced and the collision force of the ions with the protective coating layer on the electrodes is minimized. Therefore, particle generation on the substrate surface is reduced.

    Abstract translation: 本公开的实施例一般涉及用于减少处理室中的颗粒产生的装置和方法。 在一个实施例中，所述方法通常包括在动力顶部电极和接地底部电极之间产生等离子体，其中顶部电极平行于底部电极，并且在膜沉积期间向动力顶部电极施加恒定的零直流偏置电压 以最小化上电极和等离子体之间的电位差和/或接地的底部电极和等离子体之间的电位差的过程。 最小化等离子体和电极之间的电位差可减少粒子产生，因为电极的鞘区域中的离子的加速度降低，并且离子与电极上的保护涂层的碰撞力最小化。 因此，衬底表面上的颗粒产生减少。

    ROTATABLE SUBSTRATE SUPPORT HAVING RADIO FREQUENCY APPLICATOR
    3.
    发明申请
    ROTATABLE SUBSTRATE SUPPORT HAVING RADIO FREQUENCY APPLICATOR 审中-公开
    具有无线电频率适配器的可转换基板支持

    公开(公告)号：US20150083042A1

    公开(公告)日：2015-03-26

    申请号：US14091057

    申请日：2013-11-26

    Applicant: Applied Materials, Inc.

    Inventor： Satoru KOBAYASHI ,  Kirby Hane FLOYD ,  Hiroji HANAWA ,  Soonam PARK ,  Dmitry LUBOMIRSKY

    IPC: H01L21/687

    CPC classification number: H01J37/32697 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/68792 ,  H02K7/14

    Abstract: A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.

    Abstract translation: 基板支撑组件包括轴组件，联接到轴组件的一部分的基座和联接到轴组件的第一旋转连接器，其中第一旋转连接器包括围绕可旋转轴构件的第一线圈构件，该第一线圈构件电耦合 所述第一线圈构件能够与所述可旋转轴一起旋转，所述第一线圈构件围绕所述第一线圈构件，所述第二线圈构件相对于所述第一线圈构件是固定的，其中所述第一线圈构件与所述第二线圈构件电耦合， 线圈构件，并且通过轴组件向基座提供射频信号/功率。

    RF TAILORED VOLTAGE ON BIAS OPERATION
    4.
    发明申请
    RF TAILORED VOLTAGE ON BIAS OPERATION 审中-公开

    公开(公告)号：US20190311884A1

    公开(公告)日：2019-10-10

    申请号：US16374835

    申请日：2019-04-04

    Applicant: Applied Materials, Inc.

    Inventor： Satoru KOBAYASHI ,  Wei TIAN ,  Shahid RAUF ,  Junghoon KIM ,  Soonam PARK ,  Dmitry LUBOMIRSKY

    IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

    Abstract: A method, system, and apparatus for reducing particle generation on a showerhead during an ion bombarding process in a process chamber are provided. First and second RF signals are supplied from an RF generator to an electrode embedded in a substrate support in the process chamber. The second RF signal is adjusted relative to the first RF signal in response to a measurement of a first RF amplitude, a second RF amplitude, a first RF phase, and a second RF phase. Ion bombardment on a substrate is maximized and the quantity of particles generated on the showerhead is minimized. Methods and systems described herein provide for improved ion etching characteristics while reducing the amount of debris particles generated from the showerhead.

    PROCESS CHAMBER FOR DIELECTRIC GAPFILL
    5.
    发明申请
    PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
    电介质加工室

    公开(公告)号：US20140083362A1

    公开(公告)日：2014-03-27

    申请号：US14088008

    申请日：2013-11-22

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Dmitry LUBOMIRSKY ,  Qiwei LIANG ,  Soonam PARK ,  Kien N. CHUC ,  Ellie YIEH

    IPC: C23C16/509

    CPC classification number: C23C16/45502 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32752 ,  H01J2237/2001 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76224

    Abstract: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

    Abstract translation: 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。 顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。 反应性自由基前体可以通过顶部入口提供给沉积室。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

    FLOW CONTROL FEATURES OF CVD CHAMBERS
    7.
    发明申请
    FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开

    公开(公告)号：US20200149166A1

    公开(公告)日：2020-05-14

    申请号：US16745141

    申请日：2020-01-16

    Applicant: Applied Materials, Inc.

    Inventor： Kien N. CHUC ,  Qiwei LIANG ,  Hanh D. NGUYEN ,  Xinglong CHEN ,  Matthew MILLER ,  Soonam PARK ,  Toan Q. TRAN ,  Adib M. KHAN ,  Jang-Gyoo YANG ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN

    IPC: C23C16/455 ,  H01J37/32 ,  C23C16/452

    Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    ROTATABLE SUBSTRATE SUPPORT HAVING RADIO FREQUENCY APPLICATOR
    8.
    发明申请
    ROTATABLE SUBSTRATE SUPPORT HAVING RADIO FREQUENCY APPLICATOR 审中-公开

    公开(公告)号：US20170236693A1

    公开(公告)日：2017-08-17

    申请号：US15582282

    申请日：2017-04-28

    Applicant: Applied Materials, Inc.

    Inventor： Satoru KOBAYASHI ,  Kirby HANE FLOYD ,  Hiroji HANAWA ,  Soonam PARK ,  Dmitry LUBOMIRSKY

    IPC: H01J37/32 ,  H02K7/14

    Abstract: A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.

    PARTICLE GENERATION SUPPRESOR BY DC BIAS MODULATION
    10.
    发明申请
    PARTICLE GENERATION SUPPRESOR BY DC BIAS MODULATION 审中-公开

    公开(公告)号：US20170148611A1

    公开(公告)日：2017-05-25

    申请号：US15424355

    申请日：2017-02-03

    Applicant: Applied Materials, Inc.

    Inventor： Jonghoon BAEK ,  Soonam PARK ,  Xinglong CHEN ,  Dmitry LUBOMIRSKY

    IPC: H01J37/32 ,  C23C16/503 ,  C23C16/509 ,  C23C16/52

    Abstract: Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, an apparatus for processing a substrate is disclosed. The apparatus includes a chamber body, a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode, a gas distribution plate disposed between a substrate processing region and the lid assembly, and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process.

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