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    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
    1.
    发明申请
    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 有权

    公开(公告)号：US20210398778A1

    公开(公告)日：2021-12-23

    申请号：US16906875

    申请日：2020-06-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Junghoon KIM ,  Tae Seung CHO ,  Dmitry LUBOMIRSKY ,  Toan TRAN

    IPC: H01J37/32

    Abstract: Methods and apparatus for processing a substrate are herein described. For example, a processing chamber for processing a substrate includes a chamber body defining a processing volume; a radio frequency (RF) power source configured to deliver RF energy to the processing volume for processing a substrate; a substrate support comprising an electrode; an AC power supply configured to supply power to the processing chamber; an RF filter circuit connected between the electrode and the AC power supply; and a controller configured to monitor an RF voltage at the RF filter circuit that is indirectly induced into the electrode by the RF power source during operation, and to determine a processing state in the processing volume based on the monitored RF voltage

    PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING
    2.
    发明申请
    PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING 审中-公开
    循环过程室和选择性材料的去除和蚀刻

    公开(公告)号：US20170069466A1

    公开(公告)日：2017-03-09

    申请号：US14994425

    申请日：2016-01-13

    Applicant: Applied Materials, Inc.

    Inventor： Toan Q. TRAN ,  Soonam PARK ,  Junghoon KIM ,  Dmitry LUBOMIRSKY

    IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67

    CPC classification number: H01J37/32357 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/311 ,  H01L21/67069 ,  H01L21/6831

    Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

    Abstract translation: 本文描述了用于衬底蚀刻的方法和设备。 本文所述的处理室包括源模块，处理模块，流模块和排气模块。 RF源可以耦合到腔室，并且可以在源模块中产生远程等离子体，并且可以在过程模块中产生直接等离子体。 所描述的循环蚀刻工艺可以使用交替的自由基和直接等离子体蚀刻衬底。

    RF TAILORED VOLTAGE ON BIAS OPERATION
    3.
    发明申请
    RF TAILORED VOLTAGE ON BIAS OPERATION 审中-公开

    公开(公告)号：US20190311884A1

    公开(公告)日：2019-10-10

    申请号：US16374835

    申请日：2019-04-04

    Applicant: Applied Materials, Inc.

    Inventor： Satoru KOBAYASHI ,  Wei TIAN ,  Shahid RAUF ,  Junghoon KIM ,  Soonam PARK ,  Dmitry LUBOMIRSKY

    IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

    Abstract: A method, system, and apparatus for reducing particle generation on a showerhead during an ion bombarding process in a process chamber are provided. First and second RF signals are supplied from an RF generator to an electrode embedded in a substrate support in the process chamber. The second RF signal is adjusted relative to the first RF signal in response to a measurement of a first RF amplitude, a second RF amplitude, a first RF phase, and a second RF phase. Ion bombardment on a substrate is maximized and the quantity of particles generated on the showerhead is minimized. Methods and systems described herein provide for improved ion etching characteristics while reducing the amount of debris particles generated from the showerhead.

    CHAMBER FOR SUBSTRATE BACKSIDE AND BEVEL DEPOSITION
    5.
    发明申请
    CHAMBER FOR SUBSTRATE BACKSIDE AND BEVEL DEPOSITION 有权

    公开(公告)号：US20250037974A1

    公开(公告)日：2025-01-30

    申请号：US18227226

    申请日：2023-07-27

    Applicant: Applied Materials, Inc.

    Inventor： Dmitry LUBOMIRSKY ,  Junghoon KIM ,  Hyun Joo LEE ,  Pranav Vijay GADRE ,  Adib KHAN ,  Nithin Thomas ALEX ,  Douglas A. BUCHBERGER, Jr. ,  Qiwei LIANG ,  Ellie Y. YIEH ,  Shekhar ATHANI

    IPC: H01J37/32

    Abstract: Disclosed herein is a processing system. The processing system has an upper chamber body and a lower chamber body defining a processing environment. An upper heater is moveably disposed in the upper chamber body. The upper heater has a moveable support and an upper step formed along an outer perimeter. A lower showerhead is fixedly disposed in the lower chamber body. The lower showerhead includes a top surface configured to support a substrate, a lower step disposed along an outer perimeter wherein the substrate is configured to extend from the top surface partially over the lower step. Lift pins are disposed in the lower showerhead and configured to extend through the top surface and support the substrate thereon. Gas holes are disposed in a first zone along the top surface and a second zone on the step and configured to independently flow both a process and non-process gas.

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