公开(公告)号：US20230402262A1

公开(公告)日：2023-12-14

申请号：US17869987

申请日：2022-07-21

Applicant: Applied Materials, Inc.

Inventor： Tae Seung CHO ,  David Michael BENJAMINSON ,  Kenneth SCHATZ ,  Ryan Michael PAKULSKI ,  Martin Yue CHOY ,  Pratheep GUNASEELAN ,  Chih-Yung HUANG

IPC: H01J37/32

CPC classification number: H01J37/32596 ,  H01J37/32357 ,  H01J37/3244

Abstract: A remote plasma source (RPS) for generating etchants leverages symmetrical hallow cathode cavities to increase etchant rates. The RPS includes an upper electrode with a first hollow cavity configured to induce a hollow cathode effect within the first hollow cavity, a lower electrode with a second hollow cavity configured to induce a hollow cathode effect within the second hollow cavity, wherein the first hollow cavity and the second hollow cavity are symmetrical, a first gap positioned between and electrically separating the upper electrode and the lower electrode, and an annular dielectric cover in direct contact with the lower electrode in the first gap and forms a second gap between an uppermost surface of the annular dielectric cover and a lowermost surface of the upper electrode. The annular dielectric cover fills approximately 50% to approximately 95% of a height of the first gap.

公开(公告)号：US20210398778A1

公开(公告)日：2021-12-23

申请号：US16906875

申请日：2020-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Junghoon KIM ,  Tae Seung CHO ,  Dmitry LUBOMIRSKY ,  Toan TRAN

IPC: H01J37/32

Abstract: Methods and apparatus for processing a substrate are herein described. For example, a processing chamber for processing a substrate includes a chamber body defining a processing volume; a radio frequency (RF) power source configured to deliver RF energy to the processing volume for processing a substrate; a substrate support comprising an electrode; an AC power supply configured to supply power to the processing chamber; an RF filter circuit connected between the electrode and the AC power supply; and a controller configured to monitor an RF voltage at the RF filter circuit that is indirectly induced into the electrode by the RF power source during operation, and to determine a processing state in the processing volume based on the monitored RF voltage

公开(公告)号：US20210384011A1

公开(公告)日：2021-12-09

申请号：US16894002

申请日：2020-06-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Tae Seung CHO ,  Saravana Kumar NATARAJAN ,  Kenneth D. SCHATZ ,  Dmitry LUBOMIRSKY ,  Samartha SUBRAMANYA

IPC: H01J37/32 ,  H05H1/46

Abstract: Methods and apparatus for reducing particle generation in a remote plasma source (RPS) include an RPS having a first plasma source with a first electrode and a second electrode, wherein the first electrode and the second electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, and wherein the RPS provides radicals or ions into the processing volume, and a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the first electrode and the second electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.

公开(公告)号：US20160053376A1

公开(公告)日：2016-02-25

申请号：US14489398

申请日：2014-09-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Ki NAM ,  Tae Seung CHO ,  Ludovic GODET ,  Srinivas D. NEMANI

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244

Abstract: The present invention provides an apparatus having a plasma profile control plate disposed in a plasma processing chamber so as to locally alter plasma density to provide uniform plasma distribution across a substrate surface during processing. In one embodiment, a process kit includes a plate configured to be disposed in a plasma processing chamber, a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate, and an array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells.

Abstract translation: 本发明提供了一种装置，其具有设置在等离子体处理室中的等离子体轮廓控制板，从而局部地改变等离子体密度，以在处理期间在衬底表面上提供均匀的等离子体分布。 在一个实施例中，处理套件包括被配置为设置在等离子体处理室中的板，通过其形成的多个孔，所述孔被构造成允许处理气体流过板，以及包括至少一个 孔，其中每个单元电池具有相对于设置在至少两个其它单元电池中的电极组件可独立控制的电极组件。

公开(公告)号：US20220293396A1

公开(公告)日：2022-09-15

申请号：US17824977

申请日：2022-05-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Tae Seung CHO ,  Saravana Kumar NATARAJAN ,  Kenneth D. SCHATZ ,  Dmitry LUBOMIRSKY ,  Samartha SUBRAMANYA

IPC: H01J37/32 ,  H05H1/46

Abstract: Methods and apparatus for reducing particle generation in a remote plasma source (RPS) include an RPS having a first plasma source with a first electrode and a second electrode, wherein the first electrode and the second electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, and wherein the RPS provides radicals or ions into the processing volume, and a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the first electrode and the second electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.

公开(公告)号：US20170254755A1

公开(公告)日：2017-09-07

申请号：US15061769

申请日：2016-03-04

Applicant: Applied Materials, Inc.

Inventor： Tae Seung CHO ,  Junghoon KIM ,  Soonwook JUNG ,  Soonam PARK ,  Dmitry LUBOMIRSKY

IPC: G01N21/68 ,  H01J37/32 ,  H01J37/10

CPC classification number: G01N21/68 ,  G01J3/0208 ,  G01J3/0229 ,  G01J3/0237 ,  G01J3/0289 ,  G01J3/06 ,  G01J3/443 ,  G01N21/73 ,  G01N2201/0638 ,  G01N2201/068 ,  H01J37/10 ,  H01J37/32458 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J2237/103 ,  H01J2237/3341

Abstract: Implementations of the present disclosure relate to a plasma chamber having an optical device for measuring emission intensity of plasma species. In one implementation, the plasma chamber includes a chamber body defining a substrate processing region therein, the chamber body having a sidewall, a viewing window disposed in the sidewall, and a plasma monitoring device coupled to the viewing window. The plasma monitoring device includes an objective lens and an aperture member having a pinhole, wherein the aperture member is movable relative to the objective lens by an actuator to adjust the focal point in the plasma using principles of optics, allowing only the light rays from the focal point in the plasma to reach the pinhole. The plasma monitoring device therefore enables an existing OES (coupled to the plasma monitoring device through an optical fiber) to monitor emission intensity of the species at any specific locations of the plasma.